HIT 2SC458, 2SC2308 Datasheet

2SC458, 2SC2308

Silicon NPN Epitaxial

Application

• Low frequency amplifier

• Complementary pair with 2SA1029 and 2SA1030

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SC458, 2SC2308

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SC458 2SC2308 Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P

CBO

CEO

EBO

C

E

C

Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

30 55 V
30 50 V
55V
100 100 mA
–100 –100 mA
200 200 mW

2

2SC458, 2SC2308

Electrical Characteristics (Ta = 25°C)

2SC458 2SC2308

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base
breakdown voltage

Collector to emitter
breakdown voltage

Emitter to base
breakdown voltage

Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter

saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output

capacitance
Noise figure NF — 4 10 — 4 10 dB VCE = 6 V, IC = 0.1 mA,

Small signal input
impedance

Small signal voltage
feedback ratio

Small signal current
trancefer ratio

Small signal output
admittance

Note: 1. The 2SC458 and 2SC2308 are grouped by hFE as follows.

BCD

2SC458 100 to 200 160 to 320 250 to 500
2SC2308 100 to 200 160 to 320 —

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

BE

T

30 — — 55 — — V IC = 10 µA, IE = 0

30 — — 50 — — V IC = 1 mA, RBE = ∞

5 ——5 ——V IE = 10 µA, IC = 0

— — 0.5 — — 0.5 µAVCB =18 V, IE = 0
— — 0.5 — — 0.5 µAVEB = 2 V, IC = 0

1

100 — 500 100 — 320 VCE = 12 V, IC = 2 mA
— — 0.2 — — 0.2 V IC = 10 mA, IB = 1 mA

— 0.67 0.75 — 0.67 0.75 V VCE = 12 V, IC = 2 mA
— 230 — — 230 — MHz VCE = 12 V, IC = 2 mA

Cob — 1.8 3.5 — 1.8 3.5 pF VCB = 10 V, IE = 0,

f = 1 MHz

f = 1 kHz, R

h

ie

— 16.5 — — 16.5 — kΩ VCE = 5V, IC = 0.1mA,

= 500 Ω

g

f = 270 Hz

h

re

h

fe

h

oe

—70——70—× 10

— 130 — — 130 —

— 11.0 — — 11.0 — µS

–6

See characteristic curves of 2SC458 (LG) and 2SC2310 except for the followings.

3

2SC458, 2SC2308

Maximum Collector Dissipation Curve

300

(mW)

C

200

100

Collector Power Dissipation P

0 50 100 150

Ambient Temperature Ta (°C)

20

IC = 0.1 mA

16

R

12

8

Noise Figure NF (dB)

4

0

100 1k 3k300 10k 30k30

Noise Figure vs. Collector to Emitter Voltage

8

IC = 0.1 mA

= 500 Ω

R

g

6

f = 1kHz

Noise Figure vs. Frequency

= 500 Ω

g

= 6 V

V

CE

Frequency f (Hz)

4

Noise Figure NF (dB)

2

0

1

Collector to Emitter Voltage VCE (V)

30201052

4

Unit: mm

0.60 Max

0.5 ± 0.1

4.8 ± 0.3

1.27

2.54

0.7

5.0 ± 0.2

2.3 Max

12.7 Min

3.8 ± 0.3

0.5

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-92 (1)
Conforms
Conforms

0.25 g

Cautions

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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