Silicon NPN Triple Diffused
Application
• High frequency high voltage amplifier
• Video output
Outline
TO-92MOD
2SC1921
1. Emitter
2. Collector
3. Base
3
2
1
2SC1921
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
V
CEO
FE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 3 4 pF VCB = 6 V, IE = 0, f = 1 MHz
250 — — V IC = 10 µA, IE = 0
200 — — V IC = 1 mA, RBE = ∞
5——VI
— — 1.0 µAV
30 — 300 V
— — 1.0 V IC = 10 mA, IB = 1 mA
60 130 — MHz VCE = 6 V, IC = 10 mA
250 V
200 V
5V
50 mA
600 mW
= 10 µA, IC = 0
E
= 120 V, RBE = ∞
CE
= 6 V, IC = 10 mA
CE
2