HIT 2SC1906 Datasheet
Application
• VHF amplifier
• Mixer, Local oscillator
Outline
TO-92 (2)
2SC1906
Silicon NPN Epitaxial Planar
1. Emitter
2. Collector
3. Base
3
2
1
2SC1906
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Gain bandwidth product f
CBO
FE
T
Collector output capacitance Cob — 1.0 2.0 pF VCB = 10 V, IE = 0, f = 1 MHz
Collector to emitter saturation
V
CE(sat)
voltage
Base time constant r
• CC—1025psVCB = 10 V, IC = 10 mA,
bb’
Power gain PG — 33 — dB VCE = 10 V,
30 — — V IC = 10 µA, IE = 0
19 — — V IC = 3 mA, RBE = ∞
2——VI
— — 0.5 µAV
40 — — V
600 1000 — MHz VCE = 10 V, IC = 10 mA
— 0.2 1.0 V IC = 20 mA, IB = 4 mA
— 18 — dB VCE = 10 V,
30 V
19 V
2V
50 mA
–50 mA
300 mW
= 10 µA, IC = 0
E
= 10 V, IE = 0
CB
= 10 V, IC = 10 mA
CE
f = 31.8 MHz
f = 45 MHz
I
= 5 mA
C
f = 200 MHz
I
= 5 mA
C
2
2SC1906
Maximum Collector Dissipation Curve
300
(mW)
C
200
100
Collector Power Dissipation P
0
50
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
20
VCE = 10 V
16
(mA)
C
12
8
100 150
20
Typical Output Characteristics
180
16
(mA)
C
12
8
4
Collector Current I
0
Collector to Emitter Voltage V
DC Current Transfer Ratio vs.
Collector Current
120
100
VCE = 10 V
FE
80
60
40
160
84
140
120
100
80
60
40
IB = 20 µA
12 16 20
P
C
= 300 mW
(V)
CE
4
Collector Current I
0
Base to Emitter Voltage V
0.6 0.8 1.0
0.40.2
BE
(V)
20
DC Current Transfer Ratio h
0
250.5 1.00.1 0.2
Collector Current I
10 20 50 100
(mA)
C
3
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