HIT 2SC1881(K) Datasheet
2SC1881(K)
Silicon NPN Triple Diffused
Application
High gain amplifier power switching
Outline
TO-220AB
6.8 kΩ
(Typ)
400 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
60 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
7V
Collector current I
C
3A
Collector peak current I
C(peak)
6A
Collector power dissipation PC*
1
30 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SC1881(K)
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
60 — — V IC = 50 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7——VI
E
= 50 mA, IC = 0
Collector cutoff current I
CBO
— — 0.2 mA VCB = 60 V, IE = 0
I
CEO
— — 0.4 mA VCE = 30 V, RBE = ∞
DC current transfer ratio h
FE
1000 — — VCE = 1.5 V IC = 1.5 A*
1
500 — — IC = 2.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
— — 1.2 V IC = 2.5 A, IB = 20 mA*
1
Turn on time t
on
—1 —µsV
CC
= 11 V, IC = 2 A,
Turn off time t
off
—5 —µsI
B1
= –IB2 = 8 mA
Note: 1. Pulse test.
30
20
10
0 50 100 150
Collector power dissipation P
C
(W)
Maximum Collector Dissipation Curve
Case temperature T
C
(°C)
10
1
Collector current I
C
(A)
Ta = 25°C
1 shot pulse
5
2
1.0
0.5
0.2
0.1
0.05
pw = 10 ms
DC Operation
(T
C
= 25°C)
iC (peak)
I
C
max
2 5 10 20 50 100
Area of Safe Operation
Collector to emitter voltage V
CE
(V)
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