HIT 2SB1059 Datasheet

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HIT 2SB1059 Datasheet

2SB1059

Silicon PNP Epitaxial

Application

Low frequency power amplifier

Complementary pair with 2SD1490

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SB1059

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–70

V

Collector to emitter voltage

VCEO

–50

V

Emitter to base voltage

VEBO

–6

V

Collector current

IC

–1

A

 

 

 

 

Collector power dissipation

PC

0.75

W

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

–70

V

I

C = –10 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–50

V

I

C = –1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–6

V

I

E = –10 A, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–1

A

VCB = –55 V, IE = 0

Emitter cutoff current

IEBO

–0.2

A

VEB = –6 V, IC = 0

DC current transfer ratio

h *1

100

320

 

V

CE

= –2 V, I = –0.1 A

 

FE

 

 

 

 

 

C

Collector to emitter saturation

VCE(sat)

–0.6

V

I

C = –1 A, IB = –0.1 A

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

65

MHz

V

CE = –2 V, IC = –10 mA

 

 

 

 

 

 

 

 

Collector output capacitance

Cob

35

pF

V

CB = –10 V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

 

 

Note: 1. The 2SB1059 is grouped by hFE as follows.

B

C

100 to 200

160 to 320

 

 

See characteristic curves of 2SB740.

2

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