HIT 2SB1059 Datasheet

2SB1059

Silicon PNP Epitaxial

Application

•Low frequency power amplifier

•Complementary pair with 2SD1490

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SB1059

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–70	V
Collector to emitter voltage	VCEO	–50	V
Emitter to base voltage	VEBO	–6	V
Collector current	IC	–1	A
Collector power dissipation	PC	0.75	W
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown	V(BR)CBO	–70	—	—	V	I	C = –10 A, IE = 0
voltage
Collector to emitter breakdown	V(BR)CEO	–50	—	—	V	I	C = –1 mA, RBE = ∞
voltage
Emitter to base breakdown	V(BR)EBO	–6	—	—	V	I	E = –10 A, IC = 0
voltage
Collector cutoff current	ICBO	—	—	–1	A	VCB = –55 V, IE = 0
Emitter cutoff current	IEBO	—	—	–0.2	A	VEB = –6 V, IC = 0
DC current transfer ratio	h *1	100	—	320		V	CE	= –2 V, I = –0.1 A
	FE							C
Collector to emitter saturation	VCE(sat)	—	—	–0.6	V	I	C = –1 A, IB = –0.1 A
voltage
Gain bandwidth product	fT	—	65	—	MHz	V	CE = –2 V, IC = –10 mA
Collector output capacitance	Cob	—	35	—	pF	V	CB = –10 V, IE = 0, f = 1 MHz

Note: 1. The 2SB1059 is grouped by hFE as follows.

B	C
100 to 200	160 to 320

See characteristic curves of 2SB740.

2