HIT 2SC1515 Datasheet
Application
High voltage switching
Outline
TO-92 (1)
2SC1515(K)
Silicon NPN Triple Diffused
1. Emitter
2. Collector
3. Base
3
2
1
2SC1515 (K)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CES
V
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CES
voltage
V
(BR)CEO
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
V
CBO
FE
CE(sat)
voltage
Base to emitter saturation
V
BE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — — 10 pF VCB = 6 V, IE = 0, f = 1 MHz
200 — — V IC = 10 µA, RBE = 0
150 — — V IC = 1 mA, RBE = ∞
5——VI
— — 0.1 µAV
30 — 300 V
— — 1.0 V IC = 10 mA, IB = 1 mA
— — 1.5 V IC = 10 mA, IB = 1 mA
60 — — MHz VCE = 6 V, IC = 10 mA
200 V
200 V
150 V
5V
50 mA
200 mW
= 10 µA, IC = 0
E
= 20 V, IE = 0
CB
= 6 V, IC = 10 mA
CE
2
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