FUJI ELECTRIC MS5F6577 SPECIFICATION

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

IGBT MODULE

(RoHS compliant product)

2MBI200U4B-120-50

MS5F6577

May. 11 ’06

K.Muramatsu

M.Watanabe

K.Yamada

T.Miyasaka

MS5F6577

1

a

14

H04-004-07b

R e v i s e d R e c o r d s

Date

May.-11 -’06

Aug.-09 -’06 Revision

Classi-

fication

Enactment

Ind. Content

Revised Reliability test

a

results (P9/14)

Applied

date

Issued

date

Drawn Checked Checked Approved

K. Yamada T.MiyasakaM.W atanabe

K.Muramatsu

S. Ogawa

K. Yamada

T.Miyasaka

MS5F6577

2

a

14

H04-004-06b

1. Outline Drawing ( Unit : mm )

2MBI200U4B-120-50

(RoHS compliant product)

2. Equivalent circuit

MS5F6577

3

a

14

H04-004-03a

Tj=125

o

C

Zero gate voltage

Gate-Emitter

3. Absolute Maxi mum Ratings ( at Tc= 25

o

C un l ess otherwise specified )

Maxi mum

Ratings

Tc=80

o

C

Tc=25

o

C

Tc=80

o

C

4. Electrical ch aracteri stics ( at Tj= 25

o

C un less otherwise specified )

Tj=125

o

C

VCE(sat)

Tj=25

o

C

VCE(sat)

Tj=25

o

C

Tc=25

o

C

typ.

max.

mi n.

Tj=25

o

C

Tj=125

o

C

VF

Tj=125

o

C

Tj=25

o

C

Items

Lead resistance,

VF

Collector-Emitter voltage Gate-Emitter voltage

Symbols Conditions

VCES 1200 VGES

Ic Continuous

Collector current

Icp 1ms

-Ic

-Ic pulse 1ms Collector Power Dissipation 1 device Junction temperature Storage temperature Isolation voltage Screw Torque

between terminal and copper base (*1)

Mounting (*2) Terminals (*2)

Pc Tj Tstg

Viso

-

AC : 1min. 2500 VAC

(*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : 2.5 to 3.5 Nm (M5)

±20 300 200 600 400 200

400 1040 +150

-40 to +125

3.5

Units

V V

A

W

o

C

N m

Items

collector current

leakage current

threshold voltage

Symbols

ICES

IGES

VGE(th)

VCE=1200V VGE=0V VCE=0V VGE=±20V VCE=20V Ic=200mA Ic=200A

Collector-Emitter

(terminal)

VGE=15V

saturation voltage

(chip)

Input capacitance

Cies VCE=10V,VGE=0V,f=1MHz - 22 - nF ton Vcc=600V

Turn-on time

tr Ic=200A - 0.10 tr(i) VGE=±15V - 0.03 -

Turn-off time

toff RG=3.0Ω tf - 0.07 0.30

IF=200A

Forward on voltage

(terminal)

VGE=0V

(chip)

Reverse recovery time

terminal-chip (*3)

trr

R lead

IF=200A -

(*3) Biggest internal terminal resistance among arm.

Conditions

Characteri stic s

- - 2.0

- - 400

4.5 8.56.5

- 2.10 2.25

-

2.30

- 1.90 2.05

-

- 0.32

0.41 1.00

- 1.85 2.00

- 1.95 -

- 1.65 1.80

-

1.75 -

- 0.35

-

0.97 - mΩ

-

-2.10

1.20

0.60

Units

mA

nA

V

us

V

us

MS5F6577

4

a

14

H04-004-03a

Logo of p roduction

Lot.No.

Place of manu facturing (code)

200A 1200V

6. Indicati on on module

5. Thermal resistance characteristics

Items Symbols Con dit ions Units

mi n.

typ.

max.

Characteri stic s

7. Appl icable catego ry

8. Storage and transp ortati on notes

The module should be stored at a standard temperature of 5 to 35

o

C and humidity of 45 to 75% .

10. Packing and Labeling

Display on the packing box

- Logo of production

- Type name

- Lot No.

9. Definiti ons of switch ing time

- Products quantity in a packing box

Thermal resistance(1device)

Contact Thermal resistance (1 device) (*4)

Rth(j-c)

IGBT FWD - -

Rth(c-f) with Thermal Compound

-

0.025

(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.

2MBI 200U4B-120-50

This specification is applied to IGBT-Module named 2MBI200U4B-120-50.

•

0.12

0.20

-

o

C/W

Store modules in a place with few temperature changes in order to avoid condensation on the

•

module surface.

Avoid exposure to corrosive gases and dust.

•

Avoid excessive external force on the module.

•

Store modules with unprocessed terminals.

•

Do not drop or otherwise shock the modules when transporting.

•

90%

～

0V

V

L

Vcc

R

G

V

GE

V

CE

Ic

GE

V

CE

Ic

0V 0A

t

r r

I

r r

Ic

～

90%

10%

10% 10%

t

r( i )

t

r

t

o n

～

V

CE

～

t

90%

o f f

0V

t

f

MS5F6577

5

a

14

H04-004-03a