Fairchild Semiconductor CNX39U, CNX36U, CNX35U Datasheet
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DESCRIPTION
The CNX35U, CNX36U CNX38U and CNX39U are optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon NPN phototransistor with accessible base. These devices are housed in 6-pin dual-inline packages (DIP).
CNX35U CNX36U CNX38U CNX39U
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
• Appliance sensor systems
• Industrial controls
FEATURES
• High output/input DC current transfer ratio
• Low saturation voltage
• UL recognized (File # E90700)
• VDE recognized (File # 94766)
-Ordering option ‘300’ (e.g. CNX35U.300)
SCHEMATIC
Parameters Symbol Device Value Units
TOTAL DEVICE
T
STG
All -55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
All -40 to +100 °C
Lead Solder Temperature T
SOL
All 260 for 10 sec °C
EMITTER
Continuous Reverse Voltage
V
R
All 5 V
Continuous Forward Current
I
F
All 100 mA
Forward Current - Peak (10 µs pulse, δ = 0.01) IF(pk) All 3.0 A
Total Power Dissipation up to 25°C Ambient
P
D
All
200 mW
Derate Linearly from 25°C
All
2.0 mW/°C
DETECTOR CNX38U 80
Collector to Emitter Voltage (open base)
V
CEO
CNX35U, CNX36U, CNX39U 30
V
CNX38U 120
Collector to Base Voltage (open emitter) V
CBO
CNX35U, CNX36U, CNX39U
70
V
Emitter to Collector Voltage (open base) V
ECO
All 7
V
DC Collector Current I
C
All 100 mA
Detector Power Dissipation up to 25°C Ambient
P
D
All
200 mW
Derate Linearly from 25°C
All
2.0 mW/°C
2001 Fairchild Semiconductor Corporation
DS300401 5/23/01 1 OF 8 www.fairchildsemi.com
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
1
ANODE
2
CATHODE
3
6
BASE
5 COL
4 EMITTER
Parameters Test Conditions Symbol Device Min Typ Max Units
EMITTER
Input Forward Voltage I
F
= 10 mA
V
F
All
1.15 1.5 V
Reverse Current VR= 5 V
I
R
All 10 µA
DETECTOR VCE= 10 V CNX35U, CNX36U,CNX39U 250
nA
V
CE
= 50 V
I
CEO
CNX38U 2 50
nA
Leakage Current Collector to Emitter V
CE
= 10 V, TA= 70°C CNX35U, CNX36U,CNX39U 10
µA
V
CE
= 50 V, TA= 70°C CNX38U 10
µA
V
CE
= 10 V I
CBO
All 20
nA
Breakdown Voltage
Collector to Emitter IC= 1 mA, IF= 0 BV
CEO
CNX35U, CNX36U,CNX39U 30
V
CNX38U 80
Collector to Base IC= 0.1 mA, IF= 0 BV
CBO
CNX35U, CNX36U,CNX39U 70
V
CNX38U 120
Emitter to Collector IE= 0.1 mA, IF= 0 BV
ECO
All 7 V
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA= 25°CUnless otherwise specified.)
www.fairchildsemi.com 2 OF 8 5/23/01 DS300401
Characteristic Test Conditions Symbol Min Typ Max Units
Input-Output Isolation Voltage t = 1 min. V
ISO
5,300
V
RMS
Isolation Resistance V
I-O
= 500 VDC R
ISO
110 T!
Isolation Capacitance
IF =0, V = 0V , f = 1 MHz
C
ISO
0.6 1.3 pF
ISOLATION CHARACTERISTICS
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
CNX35U CNX36U CNX38U CNX39U
DC Characteristics Test Conditions Symbol Device Min Typ Max Units
CNX35U 40 160
I
F
= 10 mA, VCE= 0.4 V CNX39U 60 100
Output/Input Current Transfer Ratio
CNX36U 80 200
I
F
= 10 mA, VCE= 10 V CTR
CNX38U
70 210 %
I
F
= 16 mA, VCE= 0.4 V 50
I
F
= 2 mA, VCE= 5 V
All 15
IF= 10 mA, IC = 2 mA
CNX35U,
CNX39U
0.15 0.4
Collector-Emitter Saturation Voltage
I
F
= 10 mA, IC = 4 mA V
CE(SAT)
CNX36U 0.19
0.4
V
I
F
= 16 mA, IC = 2 mA CNX38U 0.2 0.4
AC Characteristics Test Conditions Symbol Device Min Typ Max Units
Non-Saturated Switching Times
CNX35U 20
Turn-On Time
R
L
= 100 Ω, IC= 2 mA, VCC= 5 V
t
on
CNX39U 20
µs
See Fig. 1 and Fig. 2
CNX36U 20
R
L
= 100 Ω, IC= 4 mA, VCC= 5 V
CNX38U 20
CNX35U 20
Turn-Off Time
R
L
= 100 Ω, IC= 2 mA, VCC= 5 V
t
off
CNX39U 20
µs
See Fig. 1 and Fig. 2
CNX36U 20
R
L
= 100 Ω, IC= 4 mA, VCC= 5 V
CNX38U 20
Saturated Switching Times
CNX35U 50
Turn-On Time
R
L
= 1 kΩ, IC= 2 mA, VCC= 5 V
t
on
CNX39U 50
µs
See Fig. 1 and Fig. 2
CNX36U 50
R
L
= 1 kΩ, IC= 4 mA, VCC= 5 V
CNX38U 50
CNX35U 50
Turn-Off Time
R
L
= 1 kΩ, IC= 2 mA, VCC= 5 V
t
off
CNX39U 50
µs
See Fig. 1 and Fig. 2
CNX36U 50
R
L
= 1 kΩ, IC= 4 mA, VCC= 5 V
CNX38U 50
TRANSFER CHARACTERISTICS (T
A
= 25°C Unless otherwise specified.)
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6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
CNX35U CNX36U CNX38U CNX39U
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