Fairchild Semiconductor BUT12A, BUT12 Datasheet
BUT12/12A
High Voltage Power Switching Applications
BUT12/12A
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC) 8 A
*Collector Current (Pulse) 20 A
Base Current 4 A
Collector Dissipation (TC=25°C) 100 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 175 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage IC = 100mA, L = 25mH 400 V
CEO
I
CES
I
EBO
(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 1.2A 1.5 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = 6A, IB = 1.2A 1.5 V
VBE
t
ON
t
STG
tF
* Pulsed Test: PW = 300µs, duty cycle = 1.5%
Collector Cut-off Current V
Emitter Cut-off Current V
Turn On Time VCC = 250V, IC = 6A
Storage Time 4 µs
Fall Time 0.8 µs
TC=25°C unless otherwise noted
: BUT12
: BUT12A
: BUT12
: BUT12A
TC=25°C unless otherwise noted
= V
CE
BE
= - IB2 = 1.2A
I
B1
= 41.6Ω
R
L
, V
CES
= 9V, IC = 0 10 mA
850
1000
400
450
= 0 1 mA
BE
1 µs
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
BUT12/12A
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001
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