Fairchild Semiconductor BUT11A, BUT11 Datasheet
BUT11/11A
High Voltage Power Switching Applications
BUT11/11A
TO-220
NPN Silicon Transistor
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
1
1.Base 2.Collector 3.Emitter
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage
: BUT11
: BUT11A
Collector-Emitter Voltage
: BUT11
: BUT11A
850
1000
400
450
Emitter-Base Voltage 9 V
Collector Current (DC) 5 A
*Collector Current (Pulse) 10 A
Base Current (DC) 2 A
*Base Current (Pulse) 4 A
Collector Dissipation (TC=25°C) 100 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Tes t Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
I
CES
I
EBO
(sat) Collector-Emitter Saturation Voltage
V
CE
(sat) Base-Emitter Saturation Voltage
VBE
t
ON
t
STG
tF
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
Collector Cut-off Current
Emitter Cut-off Current V
Turn On Time V
Storage Time 4 µs
Fall Time 0.8 µs
: BUT11
: BUT11A
: BUT11
: BUT11A
: BUT11
: BUT11A
: BUT11
: BUT11A
= 100mA, IB = 0 400
I
C
450
= 850V, V
V
CE
= 9V, IC = 0 10 mA
BE
I
= 3A, IB = 0.6A
C
= 2.5A, IB = 0.5A
I
C
= 3A, IB = 0.6A
I
C
I
= 2.5A, IB = 0.5A
C
= 250V, IC = 2.5A
CC
= -IB2 = 0.5A
I
B1
= 100Ω
R
L
= 0 1
BE
1
1.5
1.5
1.3
1.3
1 µs
V
V
V
V
mA
mA
V
V
V
V
Thermal Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Typ Max Units
R
θjC
©2001 Fairchild Semiconductor Corporation Rev. B1, August 2001
Thermal Resistance, Junction to Case 1.25 °C/W
Typical Characteristics
BUT11/11A
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
10
1
0.1
VBE(sat)
VCE = 5V
IC = 5 I
IC = 5 I
B
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.01 0.1 1 10
VCE(sat)
IC[A], COLLECTOR CURRENT
B
10
8
6
4
(sat)[V], SATURATION VOLTAGE
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
2
[A], COLLECTOR CURRENT
C
I
0
0 200 400 600 800 1000 1200
BUT11
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Figure 4. Reverse Biased Safe OPerating Area
10
Ic MAX (Continuous)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
BUT11
BUT11A
120
100
80
60
40
[W], POWER DISSIPATION
C
20
P
0
0 25 50 75 100 125 150 175
TC[OC], CASE TEMPERATURE
Figure 6. Power Derating
BUT11A
©2001 Fairchild Semiconductor Corporation
Rev. B1, August 2001
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