Fairchild Semiconductor BU806, BU807 Datasheet
BU806/807
High Voltage & Fast Switching Darlington
Transistor
• Using In Horizontal Output Stages of 110°°°° Crt Video Displays
• BUILT-IN SPEED-UP Diode Between Base and Emitter
BU806/807
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 6 V
Collector Current (DC) 8 A
*Collector Current (Pulse) 15 A
Base Current 2 A
Collector Dissipation (TC=25°C) 60 W
Junction Temperature 150 °C
Storage T emperature - 55 ~150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
I
CES
I
CEV
I
EBO
(sat) * Collector-Emitter Satura tion Voltage IC = 5A, IB = 50mA 1.5 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 50mA 2.4 V
V
BE
VF
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current V
* Damper Diode Forward Voltage IF = 4A 2 V
TC=25°C unless otherwise noted
: BU806
: BU807
: BU806
: BU807
TC=25°C unless otherwise noted
: BU806
: BU807
: BU806
: BU807
= 100mA, IB = 0 200
I
C
V
= 400V, V
CE
= 330V, V
V
CE
: BU806
: BU807
= 400V, V
V
CE
V
= 330V, V
CE
= 6V, IC = 0 3 mA
BE
BE
BE
BE
BE
= 0
= 0
= -6V
= -6V
400
330
200
150
150
100
100
100
100
V
V
V
V
V
V
µA
µA
µA
µA
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
BU806/807
1000
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10
I
[A], COLLECTOR CURRENT
C
VCE = 5V
VCE = 1.5V
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
10
1
VBE(sat)
VCE(sat)
Ic = 100 I
B
10
1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.1
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
1000
100
IC MAX. (Pulse)
10
IC MAX. (DC)
1
1ms
500us
10ms
DC
10us
100us
[V], FORWARD VOLTAGE
f
V
0.1
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Damper Diode Figure 4. Safe Operating Area
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 50 100 150 200
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
0.1
[A], COLLECTOR CURRENT
C
I
0.01
0.01 0.1 1 10 100 1000
BU807
BU806
VCE[V], COLLECTOR-EMITTER VOLTAGE
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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