Fairchild Semiconductor BU508AF Datasheet
BU508AF
TV Horizontal Output Applications
BU508AF
1
TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CES
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Emitter Voltage 1500 V
Collector-Emitter Voltage 700 V
Emitter-Base Voltage 5 V
Collector Current (DC) 5 A
*Collector Current (Pulse) 15 A
Collector Dissipation (TC=25°C) 60 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage IC = 100mA, IB = 0 700 V
CEO
BV
EBO
ICES
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC = 4.5A, IB = 2A 1 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = 4.5A, IB = 2A 1.5 V
V
BE
* Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed
Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 5 V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 1500V, V
CE
= 5V, IC = 0 10 mA
EB
= 5V , IC = 4.5A 2.25
CE
= 0 1 mA
BE
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Typical Characteristics
BU508AF
100
10
1
, DC CURRENT GAIN
FE
h
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. Base-Emitter Saturation Voltage
10000
1000
100
(sat)[mV], SAT URATION VO LT AGE
CE
V
10
0.1 1 10 100
IC[A], COLLECTOR CURRENT
VCE = 5V
IC = 2 I
10000
1000
100
(sat)[mV], SAT URATION VO LT AGE
BE
V
10
0.1 1 10 100
IC = 2 I
B
IC[A], COLLECTOR CURRENT
1000
B
100
[pF], CAPACITAN CE
ob
C
10
110100
f = 1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
100
IC Max. (Pulsed)
10
IC Max. (Continuous)
1
0.1
[A], COLLECTOR CU RRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VO L TAG E
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
1ms
DC
80
70
60
50
40
30
20
[W], POWER DISSIPATIOAN
C
P
10
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Rev. B, December 2002
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