Fairchild Semiconductor BU406H, BU408 Datasheet

High Voltage Switching

• Use In Horizontal Deflection Output Stage

BU406/406H/408

BU406/406H/408

1

TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Collector-Base Voltage 400 V
Collector-Emitter Voltage 200 V
Emitter-Base Voltage 6 V
Collector Current (DC) 7 A
Collector Current (Pulse) 10 A
Base Current 4 A
Collector Dissipation 60 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C

Electrical Characteristics

Symbol Parameter Test Condition Min. Max. Units

I

CES

I

EBO

(sat) Collector-Emitter Saturation Voltage

V

CE

(sat) Base-Emitter Saturation Voltage

V

BE

f

T

tOFF

Collector Cut-off Current V

Emitter Cut-off Current V

Current Gain Bandwidth Product V
Turn OFF Time

TC=25°C unless otherwise noted

TC=25°C unless otherwise noted

= 400V, V

CE

V

= 250V, V

CE

= 250V, V

V

CE

= 6V, IC = 0 1 mA

BE

: BU406
: BU406H
: BU408

: BU406
: BU406H
: BU408

: BU406
: BU406H
: BU408

= 5A, IB = 0.5A

I

C

I

= 5A, IB = 0.8A

C

= 6A, IB = 1.2A

I

C

= 5A, IB = 0.5A

I

C

I

= 5A, IB = 0.5A

C

= 6A, IB = 1.2A

I

C

= 10V, IC = 0.5A 10 MHz

CE

= 5A, IB = 0.5A

I

C

I

= 5A, IB = 0.8A

C

= 6A, IB = 1.2A

I

C

= 0

BE

= 0

BE

= 0 @ TC=150°C

BE

5

100

1

1
1
1

1.2

1.2

1.5

0.75

0.4

0.4

mA

µA

mA

V
V
V

V
V
V

µs
µs
µs

©2000 Fairchild Semiconductor International Rev. A, February 2000

Typical Characteristics

BU406/406H/408

5

I

4

3

2

[A], COLLECTOR CURRENT

1

C

I

0

012345678910

= 200mA

B

= 180mA

I

B

= 160mA

I

B

= 140mA

I

B

= 120mA

I

B

= 100mA

I

B

I

= 80mA

B

I

B

= 60mA

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain

10000

1000

(sat)[V]SATURATION VOLTAGE

100

BE

(sat)[V], V

CE

V

10

1 10 100 1000 10000

IC[mA], COLLECTOR CURRENT

VBE(sat)

VCE(sat)

= 40mA

I

B

I

= 20mA

B

IC = 10 I

1000

VCE = 5V

100

10

, DC CURRENT GAIN

FE

h

1

1 10 100 1000 10000

IC[mA], COLLECTOR CURRENT

1000

B

100

10

[pF], CAPACITANCE

ob

C

1

110100

f = 1MHz

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

IC Max. (Pulsed)

10

IC Max. (Continuous)

1

[A], COLLECTOR CURRENT

C

I

0.1
1 10 100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2000 Fairchild Semiconductor International

Dissipation Limited

Figure 4. Collector Output Capacitance

1ms

100ms

10ms

S/b Limited

MAX.

CE

V

80

70

60

50

40

30

20

[W], POWER DISSIPATIOAN

D

10

P

0

0 25 50 75 100 125 150 175 200

TC[oC], CASE TEMPERATURE

Rev. A, February 2000