Fairchild Semiconductor BC550 Datasheet
BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560
CEO
=65V
BC546/547/548/549/550
1
1. Collector 2. Base 3. Emitter
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage : BC546
Collector-Emitter Voltage : BC546
Emitter-Base Voltage : BC546/547
Collector Current (DC) 100 mA
Collector Power Dissipation 500 mW
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
h
FE
V
CE
V
BE
V
BE
f
T
C
ob
C
ib
NF Noise Figure : BC546/547/548
Collector Cut-off Current VCB=30V, IE=0 15 nA
DC Current Gain VCE=5V, IC=2mA 110 800
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
(sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.5mA
(on) Base-Emitter On Voltage VCE=5V, IC=2mA
Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF
Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF
: BC549/550
: BC549
: BC550
Ta=25°C unless otherwise noted
: BC547/550
: BC548/549
: BC547/550
: BC548/549
: BC548/549/550
Ta=25°C unless otherwise noted
I
=100mA, IB=5mA
C
=100mA, IB=5mA
I
C
=5V, IC=10mA
V
CE
=5V, IC=200µA
V
CE
f=1KHz, R
V
CE
=2KΩ, f=30~15000MHz
R
G
=2KΩ
G
=5V, IC=200µA
80
50
30
65
45
30
6
5
V
V
V
V
V
V
V
V
90
200
700
900
580 660 700
1.2
1.4
1.4
250
600
720
2
10
4
4
3
mV
mV
mV
mV
mV
mV
dB
dB
dB
dB
h
Classification
FE
Classification A B C
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
110 ~ 220 200 ~ 450 420 ~ 800
Typical Characteristics
BC546/547/548/549/550
100
IB = 400µA
80
IB = 350µA
IB = 300µA
60
IB = 250µA
IB = 200µA
40
[mA], COLLECTOR CURRENT
20
C
I
IB = 150µA
IB = 100µA
IB = 50µA
0
02468101214161820
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Transfer Characteristic
VCE = 5V
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000
IC[mA], COLLECTOR CURRENT
100
VCE = 5V
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
10000
IC = 10 I
B
1000
VBE(sat)
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
10
V
1 10 100 1000
VCE(sat)
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
1
[pF], CAPACITANCE
ob
C
0.1
1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
f=1MHz
= 0
I
E
1000
VCE = 5V
100
10
, CURRENT GAIN-BANDWIDTH PRODUCT
1
T
f
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 5. Output Capacit a nc e Figure 6. Current Gai n Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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