Fairchild Semiconductor BC549C, BC546 Datasheet
NPN EPITAXIAL
BC546/547/548/549/550 SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
• HIGH VOLTAGE: BC546, V
• LOW NOISE: BC549, BC550
• Complement to BC556 ... BC560
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
CEO
=65V
TO-92
Collector Base Voltage
: BC546
: BC547/550
: BC548/549
Collector-Emitter Voltage
: BC546
: BC547/550
: BC548/549/550
Emitter-Base Voltage
: BC546/547
: BC548/549/550
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
V
CBO
80
50
30
V
CEO
65
45
V
EBO
30
6
I
C
P
C
T
J
T
STG
5
100
500
150
-65 ~ 150
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Emitter Base Capacitance
Noise Figure : BC546/547/548
: BC549/550
: BC549
: BC550
I
h
V
V
V
f
C
C
NF
NF
CBO
T
FE
CE
BE
BE
CBO
EBO
(sat)
(on)
(on)
V
V
V
V
V
V
V
V
V
mA
mW
°C
°C
VCB=30V, IE=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz
VEB=0.5V, f=1MHz
VCE=5V, IC=200µA
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA
RG=2KΩ,
f=30~15000MHz
1. Collector 2. Base 3. Emitter
110
580
200
700
900
660
15
800
90
250
600
700
720
300
3.5
6
9
2
10
1.2
1.4
1.4
4
4
3
nA
mA
mA
mA
mA
mA
mA
MHz
pF
pF
dB
dB
dB
dB
h
CLASSIFICATION
FE
Classification A B C
h
FE
110-220 200-450 420-800
Rev. B
1999 Fairchild Semiconductor Corporation
NPN EPITAXIAL
BC546/547/548/549/550 SILICON TRANSISTOR
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