Fairchild Semiconductor BC516 Datasheet
BC516
PNP Darlington Transistor
• This device is designed for applications reguiring extremely high
current gain at currents to 1mA.
• Sourced from process 61.
BC516
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings
TA=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
P
D
, T
T
J
STG
Electrical Characteristics
Collector-Emitter Voltage 30 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 10 V
Collector Current - Continuous 1 A
Total Power Dissipation TA = 25°C625mW
Operating and Storage Junction Temperature Range -55 ~ +150 °C
TA=25°C unless otherwise noted
Symbol Pa rameter Test Cond ition Min. Typ. Max. Units
V
V
V
I
CBO
h
CEO
CBO
EBO
FE
Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0 30 V
Collector-Base Breakdown Voltage IC = 100µA, IE = 0 40 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 10 V
Collector Cutoff Current VCB = 30V, IE = 0 100 nA
DC Current Gain IC = 20mA, VCE = 2V 30,00
0
(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 0.1mA 1 V
V
CE
(on) Base-Emitter On Voltage IC = 10mA, VCE = 5V 1.4 V
V
BE
f
T
NOTES:
1. Pulse Test Pulse Width ≤ 2%
2. fT = IhfeI · f
Current Gain Bandwidth Product (2) IC = 10mA, VCE = 5V, f = 100MHz 200 MH
test
Z
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
R
θJA
R
θJC
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
Thermal Resistance, Junction to Ambient 200 °C/W
Thermal Resistance, Junction to Case 83.3 °C/W
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
BC516
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
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