Fairchild Semiconductor BC369 Datasheet
BC369
BC369
B
C
E
TO-92
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 77.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CES
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitt er Vol t age 20 V
Collector-Base Voltage 25 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.5 A
Operating and Stora ge Junction Temperature Range -55 to +150
C
°
Symbol Characteristic Max Units
BC369
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Dev ice Dissipation
Derate above 25°C
625
5.0
Thermal Resistance, Junction to Case 83.3
Thermal Resistance , Junctio n to Ambient 200
mW
mW/°C
C/W
°
C/W
°
µ
µ
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitt er Breakdown Vol t age IC = 10 mA, IB = 020V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
= 100 µA, IE = 0
I
C
I
= 10 µA, IC = 0
E
Collector-Cutoff Current VCB = 25 V, IE = 0
= 25 V, IE = 0, TA = 150°C
V
CB
Emitte r-Cutoff Current VEB = 5.0 V, IC = 0 10
DC Current Gain IC = 5.0 mA, VCE = 10 V
I
= 0.5 A, VCE = 1.0 V
C
= 1.0 A, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 0.5 V
)
C
25 V
5.0 V
10
1.0
mA
50
85
375
60
A
A
Base-Emitter On Voltage IC = 1.0 A, VCE = 1.0 V 1.0 V
BC369
SMALL SIGNAL CHARACTERISTICS
f
T
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
f = 35 MHz
T ypical Characteristics
Typical Puls ed Curr ent Gain
vs Collector Current
300
V = 5.0V
CE
125 °C
25 °C
50
- 40 °C
0
0.01 0.1 1 2
I - COLLEC TOR CURRE NT ( A)
C
h - TYPICAL PULSED C URRENT GAIN
250
200
150
100
FE
45 MHz
Collecto r-Emitter Saturation
V o lt age v s C o llec tor Cu rrent
1
= 10
β
0.8
0.6
0.4
0.2
0
0.01 0.1 1 3
CESAT
V - COLL E CTOR - EMITTER VOLTAGE ( V)
I - COLLECTOR CURRENT (A)
C
- 40 °C
25 °C
125 °C
3
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