Fairchild Semiconductor BC368 Datasheet
BC368
BC368
BC368
B
C
E
TO-92
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.5 A.
Sourced from Process 37.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CES
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 20 V
Collector-Base Voltage 25 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 2.0 A
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteristic Max Units
BC368
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 020V
C oll ec t or -Base Break down V oltage IC = 100 µA, IE = 0 25 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
Collector-Cutoff Current VCB = 25 V, IE = 0
= 25 V, IE = 0, TA = 150°C
V
CB
Em i t ter - Cutoff C u r rent VEB = 5.0 V, IC = 0 10
DC Cu r rent Gain IC = 5.0 m A, VCE = 10 V
= 0.5 A, VCE = 1.0 V
I
C
= 1.0 A, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 0.5 V
)
C
5.0 V
10
1.0
mA
50
85
375
60
µ
A
µ
A
Base-Emitter On Voltage IC = 1.0 A, VCE = 1.0 V 1.0 V
BC368
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
T ypical Characteristics
Ty pica l Pulsed C urr ent Gain
vs Collector Current
500
V = 5V
400
300
200
100
FE
h - TYPICAL PULSED CURRENT GAIN
CE
125 °C
25 °C
- 40 ºC
0
0.001 0.01 0.1 1
C
I - COLLECTO R CURR E N T (A)
f = 35 MHz
45 MHz
Collector-Emitter Saturation
Voltage vs Collector Current
1
ββ
= 10
0.1
125 ºC
0.01
0.01 0.1 1
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLEC TOR CU RREN T (A)
C
25 °C
- 40 ºC
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