Fairchild Semiconductor BC33725, BC33716 Datasheet
BC337-16
BC337-25
BC337-16 / BC337-25
Discrete POWER & Signal
Technologies
E
B
C
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced from
Process 12. See TN3019A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CES
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 45 V
Collector-Base Voltage 50 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.0 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
Symbol Characteristic Max Units
BC337-16 / BC337-25
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation 33716-25, Rev B
Total Device Dissipa tion
Derate above 25°C
Ther mal Resistance, Junction to Case 83.3
Thermal Resistan ce, Junction to Ambient 200
625
5.0
mW
mW/°C
C/W
°
C/W
°
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collec tor C u toff C u rren t
Em itte r C uto ff C u rren t VEB = 5.0 V, IC = 0 10
IC = 10 mA, IB = 0 45 V
= 100 µA, IE = 0
I
C
I
= 100 µA, IC = 0
E
V
= 20 V, IE = 0, TA = +25 °C
CB
VCB = 20 V, IE = 0, TA = +150
°C
50 V
5.0 V
DC Current Gain VCE = 1.0 V, IC = 100 mA
337-16
337-25
V
= 1.0 V, IC = 500 mA
Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.7 V
)
CE
100
160
40
Base-Emitter On Voltage VCE = 1.0 V, IC = 500 mA 1.2 V
100
5.0
250
400
nA
µA
µA
BC337-16 / BC337-25
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