Fairchild Semiconductor BC327, BC328 Datasheet
BC327/328 PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
Collector-Emitter Voltage
: BC327
: BC328
Collector-Emitter Voltage
: BC327
: BC328
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
V
CES
-50
-30
V
CEO
-45
-25
V
EBO
I
C
P
C
T
J
T
STG
-5
-800
625
150
-55 ~ 150
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Emitter Breakdown Voltage
: BC327
: BC328
Collector Emitter Breakdown Voltage
: BC327
: BC328
Emitter Base Breakdown Voltage
Collector Cut-off Current
: BC307
: BC338
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
BV
BV
BV
I
CES
h
FE
hFE2
V
CE
V
BE
f
T
C
CBO
CEO
CES
EBO
IC= -10mA, IB=0
IC= -0.1mA, IB=0
IE= -10mA, IC=0
VCE= -45V, IB=0
VCE= -25V, IB=0
VCE= -1V, IC= -100mA
VCE= -1V, IC= -30mA
IC= -500mA, IB= -50mA
(sat)
VCE= -1V, IC= -300mA
(on)
VCE= -5V, IC= -10mA
VCB= -10V, f=1MHz
V
V
V
V
V
mA
mW
°C
°C
TO-92
1. Collector 2. Base 3. Emitter
-45
-25
-50
-30
-5
-2
-2
100
60
100
12
-100
-100
630
-0.7
-1.2
V
V
V
V
V
nA
nA
V
V
MHz
pF
h
CLASSIFICATION
FE
Classification A B C
h
FE
h
FE2
100-250 160-400 250-630
60- 100- 170-
Rev. B
1999 Fairchild Semiconductor Corporation
BC327/328 PNP EPITAXIAL SILICON TRANSISTOR
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