Fairchild Semiconductor BC307, BC309, BC308 Datasheet
BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• LOW NOISE: BC309
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
TO-92
Collector-Emitter Voltage
: BC307
: BC308/309
Collector-Emitter Voltage
: BC307
: BC308/309
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
V
CES
-50
-30
V
CEO
-45
-25
V
EBO
I
C
P
C
T
J
T
STG
-5
-100
500
150
-55 ~ 150
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Emitter Breakdown Voltage
: BC307
: BC308/309
Collector Emitter Breakdown Voltage
: BC307
: BC308/309
Emitter Base Breakdown Voltage
Collector Cut-off Current
: BC307
: BC238/239
DC Current Gain
Collector-Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Emitter Base Capacitance
Noise Figure : BC237/238
: BC239
: BC239
NF
BV
BV
BV
I
h
V
V
V
f
C
C
NF
CES
T
FE
CE
BE
BE
CBO
EBO
CEO
CES
EBO
(sat)
(sat)
(on)
V
V
V
V
V
mA
mW
°C
°C
IC= -2mA, IB=0
IC= -10µA, IB=0
IE= -10µA, IB=0
VCE= -45V, IB=0
VCE= -25V, IB=0
VCE= -5V, IC= -2mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
VCB= -10V, f=1MHz
VEB= -0.5V, f=1MHz
VCE= -5V, IC= -0.2mA,
RG=2KΩ, f=1KHz
VCE= -5V, IC= -0.2mA
RG=2KΩ, f=30~15KHz
-45
-25
-50
-30
120
-0.55
V
V
V
-15
-15
V
V
nA
nA
-5
-2
-2
800
-0.5
-0.7
-0.85
-0.62
130
-0.3
-0.7
12
2
V
V
V
V
V
MHz
pF
6
pF
dB
10
dB
4
dB
4
h
CLASSIFICATION
FE
Classification A B C
h
FE
120-220 180-460 380-800
Rev. B
1999 Fairchild Semiconductor Corporation
BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR
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