EIC RM11A, RM11B, RM11C Datasheet

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RM11A - RM11C
SILICON RECTIFIER DIODES
PRV : 600 - 1000 Volts
Io : 1.2 Amperes
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
D2
* High current capability * High surge current capability
0.161 (4.10)
0.154 (3.90)
1.00 (25.4) MIN.
* High reliability * Low reverse current * Low forward voltage drop
0.034 (0.86)
0.028 (0.71)
0.284 (7.20)
0.268 (6.84)
1.00 (25.4) MIN.
* Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram
Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage VRRM 600 800 1000 V Maximum RMS Voltage VRMS 420 560 700 V Maximum DC Blocking Voltage VDC 600 800 1000 V Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. VF 0.92 V Maximum DC Reverse Current Ta = 25 °C at rated DC Blocking Voltage Ta = 100 °C Typical Junction Capacitance (Note1) CJ 30 pF Typical Thermal Resistance (Note2) Junction Temperature Range TJ - 65 to + 175 Storage Temperature Range TSTG - 65 to + 175
SYMBOL RM11A RM11B RM11C UNITS
IF 1.2 A
A100IFSM
IR 10
IR(H) 50
RθJA
50
µA µA
°C/W
°C °C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2 Rev. 01 : Mar 23, 2002
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