RM10 - RM10Z
PRV : 200 - 800 Volts
Io : 1.2 - 1.5 Amperes
FEATURES :
*High current capability
*High surge current capability
*High reliability
*Low reverse current
*Low forward voltage drop
MECHANICAL DATA :
*Case : D2 Molded plastic
*Epoxy : UL94V-O rate flame retardant
*Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
*Polarity : Color band denotes cathode end
*Mounting position : Any
*Weight : 0.465 gram
SILICON RECTIFIER DIODES
D2
1.00 (25.4)
0.161 (4.10)
MIN.
0.154 (3.90)
0.284 (7.20)
0.268 (6.84)
1.00 (25.4)
0.034 (0.86)
MIN.
0.028 (0.71)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING |
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SYMBOL |
RM10Z |
RM10 |
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RM10A |
RM10B |
UNIT |
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Maximum Repetitive Peak Reverse Voltage |
VRRM |
200 |
400 |
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600 |
800 |
Volts |
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Maximum RMS Voltage |
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VRMS |
140 |
280 |
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420 |
560 |
Volts |
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Maximum DC Blocking Voltage |
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VDC |
200 |
400 |
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600 |
800 |
Volts |
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Maximum Average Forward Current |
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0.375"(9.5mm) Lead Length Ta = 70 °C |
IF |
1.5 |
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1.2 |
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Amps. |
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Peak Forward Surge Current |
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8.3ms Single half sine wave Superimposed |
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on rated load (JEDEC Method) |
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IFSM |
120 |
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150 |
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Amps. |
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Maximum Forward Voltage at IF = 1.5 Amps. |
VF |
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0.91 |
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Volts |
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Maximum DC Reverse Current |
Ta = 25 °C |
IR |
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10 |
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μA |
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at rated DC Blocking Voltage |
Ta = 100 °C |
IR(H) |
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50 |
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μA |
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Typical Junction Capacitance (Note1) |
CJ |
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30 |
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pF |
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Typical Thermal Resistance (Note2) |
RθJA |
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50 |
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°C/W |
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Junction Temperature Range |
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TJ |
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- 65 to + 175 |
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°C |
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Storage Temperature Range |
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TSTG |
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- 65 to + 175 |
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°C |
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Notes :
(1)Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2)Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : MAY 27, 1998
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