EIC RBV3500, RBV3501, RBV3502, RBV3504, RBV3506 Datasheet

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RBV3500 - RBV3510

FEATURES :

MECHANICAL DATA :

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

0.2

SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts Io : 35 Amperes

* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Very good heat dissipation

* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams

RBV25

0.3

13.5

Dimensions in millimeters

30 ± 0.3

±0.2

7.5

±0.2

∅ 3.2 ± 0.1

1.0 ± 0.1

7.5

±0.2

3.9 ±

4.9 ±

0.2

2.0 ± 0.2

0.7 ± 0.1

0.5

17.5

Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

RBV

RATING

Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 55°C IF(AV) 35 Amps. Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 400 Amps. Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 17.5 Amps. VF 1.1 Volts Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA Typical Thermal Resistance (Note 1) Operating Junction Temperature Range TJ 10 °C Storage Temperature Range TSTG - 40 to + 150 °C

Notes :

1. Thermal Resistance from junction to case with units mounted on heatsink.

SYMBOL

I2t

RθJC

3500

3501

3502

3504

3506

3508

660

1.5 °C/W

UPDATE : AUGUST 3, 1998

RBV

3510

UNIT

A2S

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