RBV1000 - RBV1010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
* High current capability
* High surge current capability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
DC
* Ideal for printed circuit board
* Very good heat dissipation
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RBV
1000
RBV
1001
RBV
1002
RBV
1004
RBV
1006
RBV
1008
RBV
1010
UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55
°
C I
F(AV) 10
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 300 Amps.
Current Squared Time at t < 8.3 ms.
2
160
2
Maximum Forward Voltage per Diode at I
F
= 5.0 Amps. V
F 1.0
Volts
Maximum DC Reverse Current Ta = 25
°
C I
R 10 µ
A
at Rated DC Blocking Voltage Ta = 100
°
C I
R(H)
200
µ
A
Typical Thermal Resistance (Note 1)
R
θ
JC
2.5
°
C/W
Operating Junction Temperature Range TJ - 40 to + 150
°
C
Storage Temperature Range T
STG - 40 to + 150 °
C
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
RATING
RBV25
Dimensions in millimeters
C3
4.9
±
0.2
3.9
±
0.2
∅
3.2
±
0.1
11 ± 0.2
17.5 ± 0.5
20 ± 0.3
0.7
±
0.1
1.0
±
0.1
2.0
±
0.2
±
7.5
±
0.2
10
±
0.2
7.5
±
0.2
13.5
±
0.3