Datasheet VNW35NV04, VNV35NV04, VNP35NV04, VNB35NV04 Datasheet (SGS Thomson Microelectronics)

®

VNB35NV04 / VNP35NV04

/ VNV35NV04 / VNW35NV04

“OMNIFET II”:

FULLY AUTOPROTECTED POW ER M OSFET

TYPE R

DS(on)

I

lim

V

clamp

VNB35NV04
VNP35NV04
VNV35NV04

10 mΩ (*) 30 A 40 V

VNW35NV04

(*) For PowerSO-10 only

n

LINEAR CURRENT LIMITATION

n

THERMAL SHUT DOWN

n

SHORT CIRCUIT PROTECTION

n

INTEGRATED CLAMP

n

LOW CURRENT DRAWN FRO M INPUT PIN

n

DIAGNOSTIC FEEDBACK THROUGH INPUT

PIN

n

ESD PROTECTION

n

DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

n

COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION

The VNB35NV04, VNP35NV04, VNV35NV04,
VNW35NV04 are mono lithic devices desig ned in
STMicroelectronics VIPower M0-3 Technology,

BLOCK DIAGRAM

10

D2PAK

TO-220

3

1

PowerSO-10

3

2

1

TO-247

1

™

3

2

1

ORDER CODES:

2

PAK

D

VNB35NV04
TO-220 VNP35NV04
PowerSO-10

™

VNV35NV04
TO-247 VNW35NV04

intended for replacement of standard Power
MOSFETS from DC up to 25KHz applications.
Built in thermal shutdown, l inear curre nt limitation
and overvoltage clamp protect the chip in harsh
environments. F ault f eedba c k can b e detected by
monitoring the voltage at the input pin.

DRAIN

2

Overvoltage

Clamp

INPUT

1

Gate

Control

Linear

Over

T emperature

Current

Limiter

3

SOURCE

FC01000

July 2003 1/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter

V

R

IN MIN

V
V

T

V

ESD1

ESD2

P

Drain-source Voltage (VIN=0V) Internally Clamped V

DS

Input Voltage Internally Clamped V

IN

Input Current +/-20 mA

I

IN

Minim um Input Series Impe dance 4.7 Ω
Drain Current Internally Limited A

I

D

Reverse DC Output Current -30 A

I

R

Electrostatic Di scharge (R=1 . 5 K Ω, C=100pF) 4000 V
Electrostatic Discharge on output pin only

(R=330Ω, C=150pF)
Total Dissipation at Tc=25°C 125 125 125 208 W

tot

Opera ting Junct ion Temp erature Internal ly limi ted °C

T

j

Case Operating Temperature Internally limited °C

T

c

Storage Temper ature -55 to 150 °C

stg

CONNECTION DIAGRAM (TO P VI EW)

PowerSO-10

™ D

Value Unit

2

PAK TO-220 TO-247

16500 V

INPUT
INPUT
INPUT
INPUT
INPUT

6
7

8
9

10

11

DRAIN

(*) For the pins configuration related to TO-220, TO-247, D2PAK, see outlines at page 1.

CURRENT AND VOLTAGE CONVENTION S

R

I

IN

IN

INPUT

5
4
3

2
1

DRAIN

SOURCE

SOURCE
SOURCE
N.C.
SOURCE
SOURCE

I

D

V

DS

2/19

V

IN

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

THERMAL DATA

Symbol Parameter

R

thj-case

R

thj-amb

(*) When mounted on a s tandard single - s ided FR4 board with 50mm

Thermal R esistanc e Junction-case }}} MAX 1 1 1 0.6 °C/W

Thermal Resistance Junction-ambient MAX 50(*) 50(*) 50 30 °C/W

PowerSO-10

2

of Cu (at leas t 35 µm thick) connected to all DRAIN pins.

ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF

Symbol Parameter Te st Conditions Min Typ Max Unit

V

CLAMP

V

CLTH

V

I

V

I

DSS

INTH

ISS

INCL

Drain-source Clamp
Voltage
Drain-source Clamp

Threshold Voltage
Input Thre shold Vol tage VDS=VIN; ID=1mA 0.5 2.5 V
Supply Current from Input

Pin
Input-Source Clamp
Voltage

Zero Input Voltage Dr ain
Current (VIN=0V)

V

=0V; ID=15A 40 45 55 V

IN

VIN=0V; ID=2mA 36 V

=0V; VIN=5V 100 150 µA

V

DS

IIN=1mA
I

=-1mA

IN

V

=13V; VIN=0V; Tj=25°C

DS

V

=25V; VIN=0V

DS

Value

™ D2PAK TO-220 TO-247

6

-1.0

6.8 8

-0.3
30
75

Unit

V

µA

ON

Symbol Parameter Test Conditions

V

R

DS(on)

Static Drain-sour ce On
Resistance

=5V; ID=15A; Tj=25°C

IN

V

=5V; ID=15A; Tj=150°C

IN

PowerSO-10

10
20

Max

2

D

PAK

TO-220 / TO-247

13
24

Unit

mΩ

3/19

1

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)

DYNAMIC

Symbol Pa rameter Test Condit ions Min Typ Max Unit

gfs (*)
C

OSS

SWITCHING

Symbol Parame ter Tes t Conditions Min Typ Max Unit

t

d(on)

t

t

d(off)

t

t

d(on)

t

t

d(off)

t

(di/dt)

Q

Forward
Transconductance

VDD=13V; ID=15A 35 S

Output Capacitance VDS=13V; f=1MHz; VIN=0V 1300 pF

Turn-on Delay Time
Rise Time 840 2500 ns

r

Turn-off Delay Time 980 3000 ns
Fall Time 600 1500 ns

f

Turn-on Delay Time
Rise Time 27 100 µs

r

Turn-off Delay Time 34 120 µs
Fall Time 31 110 µs

f

Turn-on Current Slope

on

Total Input Charge

i

=15V; ID=15A

V

DD

V

=5V; R

gen

gen=RIN MIN

(see figure 1)

=15V; ID=15A

V

DD

V

gen

=5V; R

gen

=2.2K Ω

(see figure 1)

=15V; ID=15A

V

DD

V

=5V; R
V
I

gen
DD

gen

gen=RIN MIN

=12V; ID=15A; VIN=5V
=2.13mA (see figure 5)

=4.7Ω

=4.7Ω

150 500 ns

412µs

18 A/µs

118 nC

SOURCE DRAIN DIODE

Symbol Param eter Test Condit ions Min Typ Max Unit

(*) Forward On Voltag e ISD=15A; VIN=0V 0.8 V

V

SD

Q

I

RRM

t

Reverse Recovery Time ISD=15A; dI/dt=100 A /µs

rr

Reverse Recovery Charge 1.4 µC

rr

Reverse Recovery Current 7 A

V

=30V; L= 20 0 µ H

DD

(see test circuit, figure 2)

400 ns

PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

Symbol Param eter Test Condit ions Min Typ Max Unit

I

lim

t

dlim

T

T

I

E

(*) Pulsed: Pu ls e duration = 300 µ s , duty cycle 1.5%

Drain Current Limit VIN=6V; VDS=13V 30 45 60 A

=6V; VDS=13V

Step Response Curre nt
Limit

Overtemperature

jsh

Shutdown

Overtemperature Reset 135 °C

jrs

Fault Sink Current VIN=5V; VDS=13V; Tj=T

gf

Sing l e Pu lse

as

Avala nche Ener gy

V

IN

starti ng T
V

IN

=25°C; VDD=24V

j

=5V; R

gen=RIN MIN

(see figures 3 & 4)

jsh

=4.7Ω; L=24mH

50 µs

150 175 200 °C

10 15 20 mA

1.7 J

4/19

2

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

PROTECTION FEATURES

During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.

The device then behaves like a standard power
MOSFET and can be used as a switch from DC up
to 25KHz. The only difference from the user’s

standpoint is that a small DC current I
100µA) flows into the INPUT pin in order to supply

ISS

(typ.

the internal circuitry.
The de vice integrates:

- OVERVOLTAGE CLAMP PROTECTI ON:
internally set at 45V, along with the rugged

avalanche characteristics o f the Power MOSFET
stage giv e this device unrivall ed ruggedne ss and
energy handl ing capability. This feat ure is mainly
important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current ID to I

INPUT pin voltage s is. When the curr ent limiter is

whatever the

lim

active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction temperature may reach the
overtemperature threshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:

these are based on sensing the chip t emperatur e
and are not dependen t on the input voltage. The
location o f t he s ensing el emen t on the c h ip i n t he
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 °C, a typical
value being 170 °C. The device is automatically
restarted when the chip temp eratu re fall s of about
15°C below shut-down temperature.

- STATUS FEEDBACK:
in the case of an overtem perature fault cond ition

(Tj > T
current Igf through the INPUT pin in order to

), the device tries to sink a diagnostic

jsh

indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive imped ance is high enough
so that the INPUT p in dri ver is no t abl e to su pply
the current Igf, the INPUT pin will fall to 0V. This

will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
supply the normal operation drive current I

ISS

Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.

.

5/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Fig.1: Switching Time Test Circuit for Resistive L oad

V

R

gen

V

gen

I

D

90%

D

t

r

t

V

gen

d(on) t

Fig.2: Test Circuit for Diode Recovery Times

D

I

OMNIFET

S

25 Ω

B

10%

A

R

FAST
DIODE

gen

d(off)

I

OMNIFET

t

f

t

t

A

L=100uH

B

D

V

DD

6/19

V

gen

S

8.5 Ω

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Fig. 3: Unclamped Inductive Load Test Circuits

R

V

IN

P

GEN

W

Fig. 5: Input Ch arge Test Circuit

IN

V

GEN

Fig. 4: Unclamped Inductive Waveforms

Fig 6 : Thermal Impedance for TO-220

Fig. 7:Thermal Impedance for TO-247

ND8003

7/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Source-Drain Diode Forward Characteristics Static Drain Source On Resistance

Vsd (mV)

950

Rds(on) (mOhm)

50

900

Vin=0V

850

800

750

700

650

0 5 10 15 20 25 30 35

Id (A)

PowerSO-10 Static Drain-Source On resistance Vs.
Input Voltage

Rds(on) (mOhm)

27.5

25

Id=15A

22.5

17.5

12.5

Id=7.5A

20

Id=15A
Id=7.5A

15

Id=15A
Id=7.5A

10

7.5

5

22.533.544.555.566.5

Tj=150°C

Tj=25°C

Tj=-40°C

Vin (V)

PowerSO-10 Static Drain-Source On Resistance
Vs. Id

Rds(on) (mOhm)

30

25

Vin=5V

20

15

10

5

0

0 5 10 15 20 25 30 35

Id (A)

Tj=150ºC

Tj=25ºC

Tj=-40ºC

Vin=2.5V

40

30

20

10

0123456

Tj=-40ºC

Tj=25ºC
Tj=150ºC

Id (A)

D2PAK, TO-220 & TO-247 Static Drain-Source On
resistance Vs. Input Voltage

Rds(on) (mOhm)

30

25

Tj=150ºC

20

15

10

5

0

2.5 3 3.5 4 4.5 5 5.5 6 6.5

Tj=25ºC

Tj=-40ºC

Id=15A

Id=7.5A

Id=15A
Id=7.5A
Id=15A
Id=7.5A

Vin (V)

D2PAK, TO-220 & TO-247 Static Drain-Source On
Resistance Vs. Id

Rds(on) (mOhm)

24

21

18

15

12

9

6

3

0

0 4 8 121620242832

Vin=5V

Id (A)

Tj=150ºC

Tj=25ºC

Tj=-40ºC

8/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Transconductance Transfer Characteristics

Gfs (S)

54

48

42

36

30

24

18

12

6

0

Vds=13V

0 4 8 121620242832

Output Characteristics

Id (A)

55
50
45
40
35
30
25
20
15
10

5
0

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5

Vin=4.5V

Vin=4V

Vin=3.5V

Turn On Current Slope

Id (A)

Vds (V)

Vin=3V

Tj=-40ºC

Tj=25ºC

Tj=150ºC

Vin=2.5V

Idon (A)

50

45

40

35

30

25

20

15

10

Vds=13.5V

Tj=-40ºC

Tj=150ºC

Tj=25ºC

5
0

1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5

Vin (V)

Normalized On Resistance Vs. Temperature

Rds(on) (mOhm)

4

3.5

3

2.5

2

1.5

1

0.5

0

Vin=5V
Id=15A

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

Turn On Current Slope

di/dt (A/us)

20

17.5

15

12.5

10

7.5

5

2.5

0

0 150 300 450 600 750 900 1050

Vin=5V

Vdd=15V

Id=15A

Rg (Ohm)

di/dt (A/us)

10

9

8

7

6

5

4

3

2

0

Vin=3.5V
Vdd=15V

Id=15A

1

0 125 250 375 500 625 750 875 1000 1125

Rg (Ohm)

9/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Input Voltage Vs. Input Charge

Vin (V)

8

7

6

5

4

3

2

1

0

0 25 50 75 100 125 150 175

Vds=12V

Id=15A

Qg (nC)

Turn Off Drain-Source Voltage Slope

dV/dt (V/us)

160

140

120

100

80

60

40

20

0

0 150 300 450 600 750 900 1050

Vin=3.5V
Vdd=15V

Id=15A

Rg (Ohm)

Switching Time Resistive Load

T (ns)

1750

tr

1500

1250

1000

750

tf

500

250

0

3 3.5 4 4.5 5 5.5 6 6.5 7

Vdd=15V

Id=15A

Rg=4.7ohm

Vin (V)

td(off)

td(on)

Turn off drain source voltage slope

dV/dt (V/us)

160

140

120

100

80

60

40

20

0

0 150 300 450 600 750 900 1050

Vin=5V

Vdd=15V

Id=15A

Rg (Ohm)

Switching Time Resistive Load

T (us)

40

35

30

25

20

15

10

5

0

Vdd=15V

Id=15A

Rg=4.7ohm

0 300 600 900 1200 1500 1800 2100 2400

Rg (Ohm)

Normalized Input Threshold Voltage Vs.

Temperature

Vinth (V)

2

1.75

1.5

1.25

0.75

0.5

0.25

Vds=Vin

Id=1mA

1

0

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

td(off)

tf

tr

td(on)

10/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

Current Limit Vs. Junction Temperature

Ilim (A)

100

90

80

70

60

50

40

30

20
10

0

Vin=6V

Vds=13V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

Derating Curve

Step Response Current Limit

Tdlim (us)

180

160

Vin=6V

140

120

100

80

60

40

0 5 10 15 20 25 30 35

Vdd (V)

11/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

TO-220 MECHANICAL DATA

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

M 2.6 0.102

DIA. 3.75 3.85 0.147 0.151


.

#

%




.



C

K

*

&

.


8


.

& /


.


.


.


(


(

'


8



)

*

)

(

12/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

TO-247 MECHANICAL DATA

DIM.

A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4
L5

M 2 3 0.079 0.118

Dia. 3.55 3.65 0.140 0.144

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

34.6 1.362

5.5

0.217

13/19

11

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

PowerSO-10™ MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

A 3.35 3.65 0.132 0.144

A (*) 3.4 3.6 0.134 0.142

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

B (*) 0.37 0.53 0.014 0.021

C 0.35 0.55 0.013 0.022

C (*) 0.23 0.32 0.009 0.0126

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374

E2 7.20 7.60 0.283 300

E2 (*) 7.30 7.50 0.287 0.295

E4 5.90 6.10 0.232 0.240

E4 (*) 5.90 6.30 0.232 0.248

e 1.27 0.050

F 1.25 1.35 0.049 0.053

F (*) 1.20 1.40 0.047 0.055

H 13.80 14.40 0.543 0.567

H (*) 13.85 14.35 0.545 0.565

h 0.50 0.002
L 1.20 1.80 0.047 0.070

L (*) 0.80 1 .10 0.031 0.043

α 0º 8º 0º 8º

α (*) 2º 8º 2º 8º

(*) Muar only POA P013P

14/19

HE

h

A

F

A1

10

1

eB

0.25

D

= =

D1

= =

E2

DETAIL "A"

DETAIL "A"

B

0.10 A

SEATING

PLANE

A

C

α

E

B

E4

SEATING
PLANE

A1

L

P095A

11

1

1

1

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

2

D

PAK MECHANICAL DATA

DIM.

A4.4 4.6
A1 2.49 2.69
A2 0.03 0.23

B 0.7 0.93
B2 1.14 1.7

C 0.45 0.6
C2 1.23 1.36

D 8.95 9.35
D1 8

E10 10.4
E1 8.5

G 4.88 5.28

L 15 15.85
L2 1.27 1.4
L3 1.4 1.75

M2.4 3.2

R0.4
V2 0º8º

MIN. TYP MAX.

mm.

P011P6

15/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

TO-220 TUBE SHIPMENT (no suffix)

A

Base Q.ty 50
Bulk Q.ty 1000
Tube length (± 0.5) 532

B

A 5.5
B 31.4
C (± 0.1) 0.75

All dimensions are in mm.

C

16/19

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

PowerSO-10™ SUGGESTED PAD LAYOUT

14.6 - 14.9

10.8 - 11

6.30

0.67 - 0.73
1
2
3

9.5
4

5

10

0.54 - 0.6

9
8

7

1.27

6

TAPE AND REEL SHIPMENT (suffix “13TR”)

TUBE SHIPMENT (no suffix)

C

A

B

A

All dimensi ons ar e in mm.

Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1)

Casablanca 50 1000 532 10.4 16.4 0.8

Muar 5 0 1000 532 4.9 17.2 0.8

MUARCASABLANCA

B

REEL DIMENSIONS

Base Q.ty 600
Bulk Q.ty 600
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 24.4
N (min) 60
T (max) 30. 4

C

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986

Tape width W 24
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 24
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 11.5
Compartm ent Depth K (max) 6.5
Hole Spacing P 1 (± 0.1) 2

All dimensions are in mm.

Top

cover

tape

End

500mm min

All dimensions are in mm.

Empty components pockets
saled with cover tape.

User direction of feed

500mm min

Start

No componentsNo components Components

17/19

1

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)

12.20

9.75

16.90

A

C

5.08

1.60

3.50

All dimensions

are in millimeters

B

TAPE AND REEL SHIPMENT (suffix “13TR”)

Base Q.ty 50
Bulk Q.ty 500
Tube length (± 0.5) 532

A 6
B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

REEL DIMENSIONS

Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 24.4
N (min) 60
T (max) 30. 4

All dimensions are in mm.

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986

Tape width W 24
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 16
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 11.5
Compartm ent Depth K (max) 6.5
Hole Spacing P 1 (± 0.1) 2

All dimensions are in mm.

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Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04

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granted by implication or oth er wise under any pa tent or patent righ ts of STMicroelec tronics. Specifications ment ioned in this publication are
subject to c hange without notice. This p ublication supersedes and replaces all information p r ev iously supplied. STMicroelectronics pr oducts
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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