Datasheet VP1509NW, VP1506NW Datasheet (Supertex)

Page 1
P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BV
/R
DSS
BV
DGS
-60V 8.0Ω -0.5A VP1506NW
-90V 8.0Ω -0.5A VP1509NW
† MIL visual screening available.
DS(ON)
(max) (min) Die
I
D(ON)
Order Number / Package
VP1506 VP1509
†
Features
❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low C ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices
and fast switching speeds
ISS
Applications
❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher­ent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings
Drain-to-Source Voltage BV Drain-to-Gate Voltage BV Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
Page 2
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
V
GS(th)
∆V I
GSS
I
DSS
I
D(ON)
R
DS(ON)
GS(th)
Gate Threshold Voltage -1.5 -3.5 V VGS = VDS, ID = -1.0mA Change in V
with Temperature 5.8 6.5 mV/°CID = -1.0mA, V
GS(th)
Gate Body Leakage -1.0 -100 nA VGS = ±20V, VDS = 0V Zero Gate Voltage Drain Current -10 µAV
ON-State Drain Current -0.15 -0.25 VGS = -5V, VDS = -25V
Static Drain-to-Source ON-State Resistance
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R Forward Transconductance 150 190 m VDS = -25V, ID = -0.5A Input Capacitance 45 60 Common Source Output Capacitance 22 30 pF Reverse Transfer Capacitance 3 8 Turn-ON Delay Time 4 6 Rise Time 3 10 Turn-OFF Delay Time 8 12 Fall Time 4 10 Diode Forward Voltage Drop -1.2 -2.0 V ISD = -1.0A, VGS = 0V Reverse Recovery Time 400 ns ISD = -1.0A, VGS = 0V
with Temperature 0.55 1.0 %/°CV
DS(ON)
VP1509 -90 VP1506 -60
-0.50 -1.2 V
VI
-1 mA
= -1.0mA, VGS = 0V
D
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
V
GS
TA = 125°C
A
= -10V, VDS = -25V
GS
11 15 VGS = -5V, ID = -0.1A
6.0 8.0 V
Ω
Ω
= -10V, ID = -0.5A
GS
= -10V, ID = -0.5A
GS
VGS = 0V, VDS = -25V f = 1 MHz
= -25V
V
DD
ns I
= -0.5A
D
R
GEN
= 25Ω
VP1506/VP1509
= V
GS
DS
Switching Waveforms and Test Circuit
0V
INPUT
-10V
0V
OUTPUT
V
DD
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
10%
t
d(ON)
t
(ON)
t
r
10%
90%
90%
t
d(OFF)
t
(OFF)
90%
10%
t
F
PULSE
GENERATOR
R
gen
INPUT
D.U.T.
OUTPUT
R
L
V
DD
07/08/02
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
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