Datasheet VN800PT13TR, VN800PT, VN800S13TR, VN800S Datasheet (SGS Thomson Microelectronics)

®

July 2002 1/21

VN800S

/ VN800P T

HIGH SIDE DRIVER

1

■ CMOS COMPATIBLE INPUT

■ THERMAL SHUTDOWN

■ CURRENT LIMITATION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ PROTECTION AGAINST LOSS OF GROUND

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTION (*)

DESCRIPTION

The VN800S, VN800PT are monolithic devices made by using STMicroelectronics VIPower M0-3 Technology, i ntended for dr iving any ki nd of load with one side connected to ground. Active VCC pin voltage clamp protec ts the device

against low energy spikes. Active current limitation combined with thermal shutdown and

automatic restart protect the device against overload. Device automatically turns off in case of ground pin disconnection. This device is especially suitable for industrial applications in norms conformity with IEC1131 (Programmable Controllers International Standard).

TYPE R

DS(on)

I

OUT

V

CC

VN800S VN800PT

135 mΩ 0.7 A 36 V

ORDER CODES

PACKAGE TUBE T&R

SO-8 VN800S VN800S13TR PPAK VN800PT VN800PT13TR

SO-8 PPAK

BLOCK DIAGRAM

UNDERVOLTAGE

OVERTEMPERATURE

GND

INPUT

OUTPUT

OVERVOLTAGE

CURRENT LIMITER

LOGIC

DRIVER

Power CLAMP

STATUS

V

CC

CLAMP

DETECTION

(*) See note at page 7

V

CC

2/21

VN800S / VN800PT

ABSOLUTE MAXIMUM RATI NG

CONNECTION DIAGRAM (TOP VIEW)

CURRENT AND VOLTAGE CONVENTIONS

Symbol Parameter

Value

Unit

SO-8 PPAK

V

CC

DC Supply Voltag e 41 V

- V

CC

Reverse DC Supply Voltage - 0.3 V

- I

GND

DC Reverse Ground Pin Current - 200 mA

I

OUT

DC Output Current Internally Limited A

- I

OUT

Reverse DC Output Current - 6 A

I

IN

DC Input Current +/- 10 mA

V

IN

Input Vol t age Range -3/+V

CC

V

STAT

DC Status Vol tage + V

CC

V

ESD

Electro static Discharge (H um an Body Model: R=1.5KΩ; C=100p F)

- INPU T

- STATUS

- OUTPU T

- V

CC

4000 4000 5000 5000

V V V V

P

tot

Powe r Dissip at ion TC=25°C 4.2 41.7 W

E

MAX

Maximum Switching Energy (L=77.5mH; R

L

=0Ω; V

bat

=13.5V ; T

jstart

=150ºC ; IL=1.5A)

121 mJ

E

MAX

Maximum Switching Energy (L=125mH; R

L

=0Ω; V

bat

=13.5V; T

jstart

=150ºC; IL=1.5A)

195 mJ

T

j

Junction Operati ng Temperature Internally Limit ed °C

T

c

Case Operating Temperature - 40 to 150 °C

T

stg

Storage Temperature - 55 to 150 °C

L

max

Max Induc ti ve Load (VCC=30V; I

LOAD

=0.5A; T

amb

=100°C;

Rth

case>ambient

≤25°C/W)

2H

1

V

CC

V

CC

OUTPUT OUTPUT

N.C.

GND

STATUS INPUT

1

4

5

8

5 4 3 2 1

STATUS

OUTPUT

GND

INPUT

V

CC

SO-8 PPAK

INPUT

I

S

I

IN

V

IN

V

CC

STATUS

I

STAT

V

STAT

GND

V

CC

I

OUT

V

OUT

I

GND

OUTPUT

3/21

VN800S / VN800PT

THERMAL DATA

(*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area ( at least 35µ thick) connected to all VCC pins. (**) When mounted on FR4 printed circuit board with 0.5 cm

2

of copper area ( at least 35µ thick).

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C, unless otherwise specified)

POWER

SWITCHING (VCC=24V)

INPUT PIN

Symbol Parameter

Value

Unit

SO-8 PPAK

R

thj-case

Thermal R esistanc e Junctio n-case

Max

-3°C/W

R

thj-lead

Thermal R esistanc e Junctio n-lead

Max

30 - °C/W

R

thj-amb

Thermal R esistanc e Junctio n-ambient

Max

93 (*) 78 (**) °C/W

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

Operating Supply Voltage 5.5 36 V

V

USD

Undervolt age Shut- down 3 4 5.5 V

V

OV

Overvolt age Shut-down 36 42 V

R

ON

On State Resistance

I

OUT

=0.5A; Tj=25°C

I

OUT

=0.5A

135 270

mΩ mΩ

I

S

Supply Current

Off State; V

CC

=24V; T

case

=25°C

On State; V

CC

=24V

On State; V

CC

=24V; T

case

=100°C

10

1.5

20

3.5

2.6

µA mA mA

I

LGND

Output Current at turn-off

V

CC=VSTAT=VIN=VGND

=24V

V

OUT

=0V

1mA

I

L(off1)

Off State Output Current VIN=V

OUT

=0V 0 50 µA

I

L(off2)

Off State Output Current VIN=V

OUT

=0V; Vcc=13V; Tj =125°C 5 µA

I

L(off3)

Off State Output Current VIN=V

OUT

=0V; Vcc=13V; Tj =25°C 3 µA

Symbol Parameter Test Conditions Min Typ Max Unit

t

d(on)

Turn-on Delay Time

RL=48Ω from VIN rising edge to V

OUT

=2.4V

10 µs

t

d(off)

Turn-off Delay Time

RL=48Ω from VIN falli ng edge to V

OUT

=21.6V

40 µs

dV

OUT

/

dt

(on)

Turn-on Voltage Slope

RL=48Ω from V

OUT

=2.4V to

V

OUT

=19.2V

See

relativ e

diagram

V/µs

dV

OUT

/

dt

(off)

Turn-off Volta ge Slope

RL=48Ω from V

OUT

=21.6V to

V

OUT

=2.4V

See

relative

diagram

V/µs

Symbol Paramete r Test Conditions Min Typ Max Unit

V

INL

Input Low Level 1.25 V

I

INL

Low Leve l Input Curr ent VIN=1.25V 1 µA

V

INH

Input High Level 3.25 V

I

INH

High Level Input Current VIN=3.25V 10 µA

V

I(hyst)

Input Hysteres is Voltag e 0.5 V

I

IN

Input Current VIN=VCC=36V 200 µA

1

4/21

VN800S / VN800PT

2

ELECTRICAL CHARACTERISTICS (continued) STATUS PIN

PROTECTIONS

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

Status Low Output Voltage I

STAT

=1.6 mA 0.5 V

I

LSTAT

Status Leakage Current Normal Operation; V

STAT=VCC

=36 V 10 µA

C

STAT

Status Pin Input Capacitance

Normal Operation; V

STAT

= 5V 30 pF

Symbol Parame ter Test Conditi ons Min Typ Max Unit

T

TSD

Shut-down Temperature 150 175 200 °C

T

R

Reset Temp erature 135 °C

T

hyst

Ther ma l Hy steresis 7 15 °C

T

SDL

Status Delay in Overload Condition

T

j>Tjsh

20 µs

I

lim

DC Short Circuit Current VCC=24V; R

LOAD

=10mΩ 0.7 2 A

V

demag

Turn-off Output Clamp Voltage

I

OUT

=0.5 A; L=6mH VCC-47 VCC-52 VCC-57 V

OVERTEMP STATUS TIMING

Tj>T

jsh

V

IN

V

STAT

t

SDL

t

SDL

5/21

VN800S / VN800PT

V

OUT

dV

OUT

/dt

(on)

t

r

80%

10%

t

f

dV

OUT

/dt

(off)

t

d(off)

t

d(on)

V

IN

t

90%

Switching time Waveforms

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

L

H

L

H

H H

Current Limitation

L H H

L X X

H

(T

j

< T

TSD

) H

(T

j

> T

TSD

) L

Overtemperature

L

H

L

H

L

Undervoltage

L

H

L

X X

Overvoltage

L

H

L

H H

6/21

VN800S / VN800PT

Figur e 1: Peak Short Circuit Current Test Circuit

Figur e 2: Avalanche Energy Test Circuit

10kΩ

CONTROL

UNIT

R

IN

INPUT

GND

OUTPUT

R

L

=10mΩ

+V

CC

GND

STATUS

10kΩ

CONTROL

UNIT

R

IN

INPUT

GND

OUTPUT

LOAD

+V

CC

GND

STATUS

V

CC

V

CC

7/21

VN800S / VN800PT

GND PROTECTION NETWORK AGAINST REVERSE BATTERY

Soluti on 1: Resistor in the ground line (R

GND

only). This

can be us ed with any t ype of load . The fo llow ing is an indica tion on how to di mension the

R

GND

resistor.

1) R

GND

≤ 600mV / (I

S(on)ma x

).

2) R

GND

≥ (−VCC) / (-I

GND

)

where -I

GND

is the DC re vers e grou nd pi n cu rren t an d can

be found in the absolute maximum rating section of the

device’s datasheet. Power Dissipation in R

GND

(when VCC<0: during reverse

battery situations) is: P

D

= (-VCC)2/R

GND

This resistor can be shared amongst several different HSD. Please note tha t t h e va l u e of this resis t o r sh ould be calcul ated with form ula (1) wher e I

S(on)max

becomes t he sum of the maximum on-state currents of the different devices.

Please note that if the microprocessor ground is not common with the device ground then the R

GND

will

produce a shift (I

S(on)max

* R

GND

) in the input thresholds and the status output values. This shift will vary depending on many devices are ON in the case of several high side drivers sharing the same R

GND

.

If the calculated power dissipation leads to a large resistor or several devices hav e to share the sa me resisto r then the ST suggests to utiliz e Solu tio n 2 (se e below ).

Solution 2:

A diode (D

GND

) in the gro und line.

A resistor (R

GND

=1kΩ) should be inserted in parallel to

D

GND

if the devi ce will be driving an inducti ve load.

This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network wi ll produce a shift (

j

600mV) in t he input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor net work.

µC I/Os PROTECTION:

If a ground protection network is used and negative transients are present on the V

CC

line, th e con trol p ins will

be pulled negative. ST suggests to insert a resistor (R

prot

)

in lin e to prevent the µC I/Os pins to latch-up. The value of these resistors is a compromise between the

leakage c urrent of µC an d the current required by the HSD I/Os ( Input le vels comp atibilit y) wi th the lat ch-up li mit of µC I/Os.

-V

CCpeak/Ilatchup

≤ R

prot

≤ (V

OHµC-VIH-VGND

) / I

IHmax

Calculation example: For V

CCpeak

= - 100V an d I

latchup

≥ 20mA; V

OHµC

≥ 4.5V

5kΩ ≤ R

prot

≤ 65kΩ.

Recommended R

prot

value is 10kΩ.

APPLICATION SCHEMATIC

V

CC

INPUTn

GND

STATUSn

OUTPUTn

Volt. Reg

BUS ASIC

Control & Diagnostic I/O

5V

24VDC

V

CC

DGND

VGND

RGND

Rprot

LOAD

R

L

8/21

VN800S / VN800PT

STATUS

INPUT

NORMAL OPERATION

UNDERVOLTAGE

V

CC

V

USD

V

USDhyst

INPUT

OVERVOLTAGE

V

CC

VCC>V

OV

STATUS

INPUT

STATUS

undefined

Figure 3: Waveforms

LOAD VOLTAGE

V

CC<VOV

LOAD VOLTAGE

OVERTEMPERATURE

INPUT

STATUS

T

TSD

T

R

T

j

LOAD CURREN T

9/21

VN800S / VN800PT

High Level Input Current

Status Leakage Current

Off State Output Current

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

1

2

3

4

5

6

7

8

Iih (µA)

Vin=3.25V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

Ilst at (µA)

Vstat=Vcc=36V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

0.25

0.5

0.75

1

1.25

1.5

1.75

2

2.25

2.5

IL(off1) (µA)

Off state Vcc=36V

Vin=Vout=0V

On State Resistance Vs T

case

On State Resistance Vs V

CC

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

50

100

150

200

250

300

350

400

Ron (mOhm)

Iout=0.5A

Vcc=8V; 13V; 36V

5 10152025303540

Vcc (V)

0

50

100

150

200

250

300

350

400

Ron (mOhm)

Iout=0.5A

Tc= - 40ºC

Tc= 25ºC

Tc= 150ºC

I

LIM

Vs T

case

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

0.25

0.5

0.75

1

1.25

1.5

1.75

2

2.25

2.5

Ilim (A)

Vcc=24V

Rl=10mOhm

10/21

VN800S / VN800PT

1

Input Hysteresis Voltage

Input Low LevelInput High Level

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

2

2.2

2.4

2.6

2.8

3

3.2

3.4

3.6

Vih (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

Vil (V)

-50 -25 0 25 50 75 100 1 25 150 175

Tc (°C)

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

Vhyst (V)

Overvoltage Shutdown

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

30

32

34

36

38

40

42

44

46

48

50

Vov (V)

Turn-on Voltage Slope Turn-off Voltage Slope

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

200

400

600

800

1000

1200

1400

1600

dVout/dt(on) (V/ms)

Vcc=24V

Rl=48Ohm

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

100

200

300

400

500

600

700

800

dVout/dt(off) (V/ms)

Vcc=24V

Rl=48Ohm

11/21

VN800S / VN800PT

PPAK Maximum turn off current versus load inductance

A = Single Pulse at T

Jstart

=150ºC

B= Repetitive pulse at T

Jstart

=100ºC

C= Repetitive Pulse at T

Jstart

=125ºC

Conditions: VCC=13.5V

Values are generated with RL=0Ω In case of repetitive pulses, T

jstart

(at beginning of each demagnetization) of every pulse must not exceed

the temperature specified above for curves B and C.

VIN, I

L

t

Demagnetization

0.1

1

10

1 10 100 1000

L(mH)

I

LMAX (A)

A

B C

12/21

VN800S / VN800PT

SO-8 Maximum turn off current versus load inductance

A = Single Pulse at T

Jstart

=150ºC

B= Repetitive pulse at T

Jstart

=100ºC

C= Repetitive Pulse at T

Jstart

=125ºC

Conditions: VCC=13.5V

Values are generated with RL=0Ω In case of repetitive pulses, T

jstart

(at beginning of each demagnetization) of every pulse must not exceed

the temperature specified above for curves B and C.

VIN, I

L

t

Demagnetization

0.1

1

10

1 10 100 1000

L(mH)

I

LMAX (A)

A

B C

13/21

VN800S / VN800PT

SO-8 PC Board

R

thj-amb

Vs PCB copper area in open box free air condition

SO-8 THERMAL DATA

Layout condition of Rth and Zth measurements (PCB FR 4 area= 58mm x 58mm, PCB thi ckness=2mm, Cu thickness=35µm, Copper areas: 0.14cm

2

, 2cm2).

70

75

80

85

90

95

100

105

110

00.511.522.5

PCB Cu heatsink area (cm^2)

RTHj_amb (ºC/W)

SO8 at 2 pins connected to TAB

14/21

VN800S / VN800PT

PPAK PC Board

R

thj-amb

Vs PCB copper area in open box free air condition

PPAK THERMAL DATA

Layout condition of Rth and Zth measurements (PCB FR 4 area= 60mm x 60mm, PCB thi ckness=2mm, Cu thickness=35µm, Copper areas: 0.44cm

2

, 8cm2).

0

10

20

30

40

50

60

70

80

90

0246810

PCB Cu heatsink area (cm^2)

RTHj_amb

(ºC/W)

15/21

VN800S / VN800PT

Thermal fitting model of a single channel HSD in SO-8

Pulse calculation formula

Thermal Parameter

Area/island (cm2)0.142

R1 (°C/W) 0.24 R2 (°C/W) 1.2 R3 ( °C/W) 4.5 R4 (°C/W) 21 R5 (°C/W) 16 R6 (°C/W) 58 28 C1 (W.s/°C) 0.00015 C2 (W.s/°C) 0.0005 C3 (W.s/°C) 7.50E-03 C4 (W.s/°C) 0.045 C5 (W.s/°C) 0.35 C6 (W.s/°C) 1.05 2

Z

THδ

RTHδ Z

THtp

1 δ–()+⋅=

where

δ tpT⁄=

SO-8 Thermal Impedance Junction Ambient Single Pulse

T_amb

C1

R1 R2

C2

R3

C3

R4

C4

R5

C5

R6

C6

Pd

Tj

0.1

1

10

100

1000

0.0001 0.001 0.01 0.1 1 1 0 100 1000 Time (s)

ZTH ( ° C/W )

0.5 cm

2

2 cm

2

16/21

VN800S / VN800PT

Thermal fitting model of a single channel HSD in PPAK

Pulse calculation formula

Thermal Parameter

Area/island (cm2)0.446

R1 (°C/W) 0.04 R2 (°C/W) 0.25 R3 ( °C/W) 0.3 R4 (°C/W) 2 R5 (°C/W) 15 R6 (°C/W) 61 24 C1 (W.s/°C) 0.0008 C2 (W.s/°C) 0.007 C3 (W.s/°C) 0.02 C4 (W.s/°C) 0.3 C5 (W.s/°C) 0.45 C6 (W.s/°C) 0.8 5

Z

THδ

RTHδ Z

THtp

1 δ–()+⋅=

where

δ tpT⁄=

PPAK Thermal Impedance Junction Ambient Single P ulse

T_amb

C1

R1 R2

C2

R3

C3

R4

C4

R5

C5

R6

C6

Pd

Tj

0.1

1

10

100

1000

0.0001 0.001 0.01 0.1 1 10 100 1000 Time ( s)

ZTH (°C/W)

0.44 cm

2

6 cm

2

17/21

VN800S / VN800PT

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033

b 0.3 5 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ .)

D 4.8 5 0.188 0.196

E

5.8

6.2 0.228 0.244

e 1.27 0.050 e3 3.81 0.150

F 3.8 4 0.14 0.157

L 0 .4 1.27 0.015 0.05 0

M 0.6 0.023

S 8 (max.) L1 0.8 1.2 0.031 0.047

SO-8 MECHANICAL DATA

18/21

VN800S / VN800PT

DIM. MIN. TYP MAX.

A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23

B 0.40 0.60 B2 5.20 5.40

C 0.45 0.60 C2 0.48 0.60 D1 5.1

D 6.00 6.20

E 6.40 6.60

E1 4.7

e1.27

G 4.90 5.25 G1 2.38 2.70

H 9.35 10.10

L2 0.8 1.00 L4 0.60 1.00

R0.2 V2 0º 8º

Packag e Weight Gr. 0.3

PPAK MECHANICAL DATA

P032T1

19/21

VN800S / VN800PT

SO-8 TUBE SHIPMENT (no suffix)

All dimensions ar e in mm.

Base Q.ty 100 Bulk Q.ty 2000 Tube length (± 0.5) 532

A 3.2 B 6 C (± 0.1) 0.6

TAPE AND REEL SHIPMENT (suffix “1 3TR”)

All dimensions ar e in mm.

Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± 0.2) 13

F 20.2 G (+ 2 / -0) 12.4 N (min) 60 T (max) 18.4

TAPE DIMENSIONS

According to Elec tronic Industries Association (EIA) S tandard 481 rev. A , Feb 1986

All dimensions ar e in mm.

Tape width W 12 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 8 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 5.5 Compartment Depth K (max) 4.5 Hole Spacing P1 (± 0.1) 2

Top

cover

tape

End

Start

No componentsNo components Components

500mm min

Empty components pockets saled with cover tape.

User direction of feed

REEL DIMENSIONS

C

B

A

20/21

VN800S / VN800PT

PPAK TUBE SHIP MENT (no suffix)

1

All dimensions are in mm.

Base Q.ty 75 Bulk Q.ty 3000 Tube length (± 0.5) 532

A 6 B 21.3 C (± 0.1) 0.6

TAPE AND REEL SHIPMENT (suffix “1 3TR”)

All dimensions ar e in mm.

Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± 0.2) 13

F 20.2 G (+ 2 / -0) 16.4 N (min) 60 T (max) 22.4

TAPE DIMENSIONS

According to Elec tronic Industries Association (EIA) S tandard 481 rev. A , Feb 1986

All dimensions ar e in mm.

Tape width W 16 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 8 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 7.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2

Top

cover

tape

End

Start

No componentsNo components Components

500mm min

Empty components pockets saled with cover tape.

User direction of feed

REEL DIMENSIONS

A

C

B

21/21

VN800S / VN800PT

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Datasheet VN800PT13TR, VN800PT, VN800S13TR, VN800S Datasheet (SGS Thomson Microelectronics)

Specifications and Main Features

Frequently Asked Questions

User Manual