Datasheet VN772K Datasheet (SGS Thomson Microelectronics)

®

VN772K

QUAD SM ART P OWE R SOL ID STATE RE LAY

FOR COMP LET E H B RIDG E CO NF IGUR ATIONS

TYPE R

VN772K 120 mΩ (*) 9A (**) 36V

(*) Total resis tance of one side in bridge configuration
(**) Typica l c ur r ent limitation value

■ SUITED AS LOW VOLTAGE BRIDGE

■ LINEAR CURRENT LIMITATION

■ VERY LOW STAND-BY POWER DISSIPATION

■ SHORT CIRCUIT PROTECTED

■ DOUBLE STATUS FLAG DIAGNOSTIC (OPEN

DS(on)

I

OUT

V

CC

DRAIN)

■ INTEGRATED CLAMPING CIRCUITS

■ UNDERVOLTAGE PROTE CTIO N

■ ESD PROTECTION

DESCRIPTION

The VN772K is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high side and two low side
switches. Both the d ouble high si de an d low side
switches are made using |STMicroelectronics
VIPower™ M0-3 Technology. This device is
suitable to drive a DC motor in a bridge
configuration as well as to be used as a quad
switch for any low voltage application. The dual

SO-28

high side switches have bui lt-i n ther mal s hutdo wn
to protect the chips from overtemperature and
current limiter blocks to protect the device from
short circuit. Statu s output is provi ded to indicate
open load in off and on state and overtemperature.
The low sid e swi tches are two O MNIFET II typ es

(fully autopr otecte d Powe r MOSF ET in V IPower™
technology). They have built-in thermal shutdown,
linear current limitation and overvoltage clamping.
Fault feedback for thermal intervention can be
detected by monitoring the voltage at the input pin.

PIN FUNCTION

No NAME FUNCTION

1, 3, 25, 28 DRAIN 3 Drain of Switch 3 (low-side switch)

2 INPUT 3 Input of Switch 3 (low-side switch)

4, 11 N.C. Not Connected

5, 10, 19, 24 V

6 GND Ground of Switches 1 and 2 (high-side switche s)
7 INPUT 1 Input of Switch 1 (high-side swi tches)
8 DIAGNOSTIC Diagn ostic of Sw itches 1 and 2 (high-side swit ches)
9 INPUT 2 Input of Switch 2 (high-side swi tch)

12, 14, 15, 18 DRAIN 4 Drain of switch 4 (low-side switch)

13 INPUT 4 Input of Switch 4 (low-side switch)
16, 17 SOURCE 4 Source of Switch 4 (l ow-side switch)
20, 21 SOURCE 2 Source of Switch 2 (hi gh-side switch)
22, 23 SOURCE 1 Source of Switch 1 (hi gh-side switch)
26, 27 SOURCE 3 Source of Switch 3 (l ow-side switch)

November 2002 1/21

CC

Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage

1

VN772K

BLO C K DIAG RA M

V

cc

CLAMP

OVERVOLTAGE

UNDERVOLTAGE

V

cc

GND

INPUT1

DIAG

INPUT2

INPUT3

OVERTEMP. 1

OVERTEMP. 2

LOGIC

CLAMP 1

DRIVER 1

CURRENT LIMITER 1

OPENLOAD ON 1

OPENLOAD OFF 1

Gate

Control

Over

T emperature

DRIVER 2

CURRENT LIMITER 2

OPENLOAD ON 2

OPENLOAD O FF 2

Overvoltage

Clamp

Linear

Current

Limiter

SOURCE1

CLAMP 2

SOURCE2

DRAIN3

SOURCE3

2/21

1

INPUT4

Gate

Control

Over

T emperature

Overvoltage

Clamp

Linear

Current

Limiter

DRAIN4

SOURCE4

CONNECTION DIAGRAM

VN772K

THERMAL DATA

Symbol Parameter Value Unit

R

thj-case

R

thj-case

R

thj-amb

Thermal Resist ance Junction-case (High-side switch) MAX 20 °C/W

Thermal Resist ance Junction-case (Low-side switch) MAX 20 °C/W
Thermal Resist ance Junction-ambient MAX 60 °C/W

ABSOLUTE MAXIMUM RATI NG

DUAL HIGH SIDE SWITCH

Symbol Parameter Value Unit

tot

DC Supply Voltage 41 V
Reverse DC Supply Voltage - 0.3 V

CC

DC Reverse Ground Pin Current - 200 mA
DC Output Current Internally Limited A
Reverse DC Output Current - 6 A
DC Input Current +/- 10 mA
DC Status Cur rent +/- 10 mA
Electrostatic Discharge (Human Body Model: R=1.5KΩ;

C=100pF)

- INPUT

- STATUS

- OUTPU T

- V

CC

4000
4000
5000
5000

Powe r Dissipation Tc=25°C 6 W
Junction Operating Temperature Internally Limited °C

j

Case Operating Temperature - 40 to 150 °C

c

Storage Temperature - 55 to 150 °C

V

- V

- I
I

OUT

- I

I

STAT

V

P

T

CC

GND

OUT

I

IN

ESD

T

T

stg

V
V
V
V

3/21

1

VN772K

ABSOLUTE MAXIMUM RATING (continued)

LOW SIDE SWITCHES

Symbol Parameter Value Unit

V

DS

V

IN

I

IN

R

IN MIN

I

D

I

R

V

ESD1

V

ESD2

P

tot

T

j

ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH

(8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)

POWER OUTPUTS (Per each channel)

Symbol Parameter Test Conditions Min Typ Max Unit

(**) Operating Supply Voltag e 5.5 13 36 V

V

CC

(**) Undervol tage Shut -down 3 4 5.5 V

V

USD

(**) Overv olt age Shut-d ow n 36 V

V

OV

R

DS(on)

(**) Supply Current

I

S

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

Drain-source Voltage (VIN=0V) Internally Clampe d V
Input Voltage Internally Clamped V
Input Current +/-20 mA
Minim um Input Series Impe dance 150 Ω
Drain Current Inte rnally Lim ited A
Reverse DC Output Current -10.5 A
Electrostat ic Dischar ge (R=1.5KΩ , C=100pF) 4000 V
Electrostat ic Dischar ge on output pin only
(R=330Ω, C=150pF)

16500 V

Power Dissipation (TC=25°C) 6 W

Opera ting Junct ion Temperature Internally limited °C

I

=2A; Tj=25°C

On State Resistance

OUT

I

=2A; VCC>8V

OUT

Off Stat e; V
Off Stat e; V

V

IN=VOUT

On State; V

Off State Output Current VIN=V

OUT

Off State Output Current VIN=0V; V
Off State Output Current VIN=V
Off State Output Current VIN=V

OUT
OUT

=13V; V

CC

=13V; Tj =25°C;

CC

=0V

=13V

CC

IN=VOUT

=0V

12

12

5

=0V; VCC=36V; Tj=125°C 0 50 µA

=3.5V -75 0 µA

OUT

=0V; VCC=13V; Tj =125°C 5 µA
=0V; VCC=13V; Tj =25°C 3 µA

60

120

40

25

7

mΩ
mΩ

µA

µA

mA

SWITCHING (Per each channel) (VCC=13V)

Symbol Parameter Test Condit ions Min Typ Max U nit

t

d(on)

t

d(off)

dV

OUT

dt

(on)

dV

OUT

dt

(off)

(**) Per device

4/21

Turn-on Delay Time

Turn-off Delay Time

/

Turn-on Voltage Slope

/

Turn-off Voltage Slope

RL=6.5Ω from VIN rising edge to
V

=1.3V

OUT

RL=6.5Ω from VIN falling edge to
V

=11.7V

OUT

RL=6.5Ω from V

=10.4V

V

OUT

RL=6.5Ω from V
V

=1.3V

OUT

=1.3V to

OUT

=11.7V to

OUT

30 µs

30 µs

See

relative

diagram

See

relative

diagram

V/µs

V/µs

VN772K

ELECTRICAL CHARACTERISTICS FOR DUAL HI GH SIDE SWITCH (continued)
INPUT PINS (Per each channel)

Symbol Parameter Test Conditions Min Typ Max Unit

V

I

V

I

IH

V

I(hyst)

V

ICL

LOGIC INPUT (Per each channel)

Symbol Parameter Test Conditions Min Typ Max Unit

V

I

V

I

IH

V

I(hyst)

V

ICL

STATUS PIN (Per each channel)

Symbol Parameter Test Conditions Min Typ M ax Unit

V

STAT

I

LSTAT

C

STAT

V

SCL

Input Low Level 1.25 V

IL

Low Level Input Current VIN=1.25V 1 µA

IL

Input High Level 3.25 V

IH

High Level Input Current VIN=3.25V 10 µA
Input Hyst eresis Vo lt age 0.5 V

=1mA

I

Input Clamp Voltage

Input Low Level 1.25 V

IL

Low Level Input Current VIN = 1.25V 1 µA

IL

Input High Level 3.25 V

IH

IN

I

= -1mA

IN

6.5 7.4

-0.7

High Level Input Current VIN = 3.25V 10 µA
Input Hyst eresis Vo lt age 0.5 V

= 1mA

I

Input Clamp Voltage

Status Low Output Voltage I

IN

I

= -1mA

IN

= 1.6 mA 0.5 V

STAT

Status Leakage Current Normal Operation; V
Status Pin Input

Capacitance
Status Clamp Voltage

Normal Operation; V

= 1mA

I

STAT

I

= - 1mA

STAT

= 5V 10 µA

STAT

= 5V 100 pF

STAT

66.8

-0.7

66.8

-0.7

8.5 V

8V

8V

V

V

V

PROTECTIONS (Per each channel)

Symbol Parameter Test Condit ions M in Typ Max Unit

T

T

t

SDL

I

V

demag

TSD

T

hyst

lim

Shut-down Temperature 150 175 200 °C

Reset Temp erature 135 °C

R

Ther ma l Hy steresi s 7 15 °C
Status Delay in Overload

Conditions

Current limitation T

Tj>T

=125°C

j

TSD

8.5

6

915

5.5V<VCC<36V
Turn-off Output Clamp
Voltage

=2A; L= 6m H VCC-41 VCC-48 VCC-55 V

I

OUT

20 µs

15
15

A
A
A

5/21

1

VN772K

ELECTRICAL CHARACTERISTICS FOR DUAL HI GH SIDE SWITCH (continued)
OPENLOAD DETECTION (Per each channel)

Symbol Parameter Test Conditions Min Typ Max Unit

I

OL

t

DOL(on)

V

T

DOL(off)

Openload ON State
Detectio n Threshol d
Openload ON State
Detection Delay

=5V 50 100 200 mA

V

IN

=0A 200 µs

I

OUT

Openload OFF State
Voltage Detection

OL

Threshold
Openload Detection Delay

at Turn Off

VIN=0V 1.5 2.5 3.5 V

1000 µs

6/21

VN772K

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES

(-40°C < Tj < 150°C, unless otherwise specified)
OFF

Symbol Parameter Test Conditions Min Typ Max Unit

V

CLAMP

V

CLTH

V

I

V

I

DSS

INTH

ISS

INCL

Drain-source Clamp
Voltage

Drain-source Clamp
Threshold Voltage

Input Threshold Voltage VDS=VIN; ID=1mA 0.5 2.5 V
Supply Cur rent fro m Inpu t

Pin
Input-Source Clamp

Voltage
Zero Input Voltage Drain

Current (VIN=0V)

ON

Symbol Parameter Test Conditions Min Typ Max Unit

R

DS(on)

Stati c Dr ain-sourc e On
Resist an ce

(Tj=25°C, unless otherwise specified)
DYNAMIC

Symbol Parameter Test Conditions Min Typ Max Unit

Forward

(*)

g

fs

C

OSS

Transconductance
Output Capacitance VDS=13V; f=1MHz; VIN=0V 220 pF

VIN=0V; ID=3.5A 40 45 55 V

VIN=0V; ID=2mA 36 V

VDS=0V; VIN=5V 100 150 µA

=1mA

I

IN

I

=-1mA

IN

=13V; VIN=0V; Tj=25°C

V

DS

V

=25V; VIN=0V

DS

=5V; ID=3.5A; Tj=25°C

V

IN

V

=5V; ID=3.5A

IN

6

-1.0

6.8 8

-0.3

30
75

60

120

VDD=13V; ID=3.5A 9 S

V

µA

mΩ

SWITCHING

Symbol Parameter Test Conditions Min Typ M ax Unit

t

d(on)

t

t

d(off)

t

t

d(on)

t

t

d(off)

t

(dI/dt)

Q

Turn-on Delay Time
Rise Time 470 1500 ns

r

Turn-off Delay Time 500 1500 ns
Fall Time 350 1000 ns

f

VDD=15V; ID=3.5A
V

=5V; R

gen

gen=RIN MIN

=150Ω

Turn-on Delay Time
Rise Time 4.6 14.0 µs

r

Turn-off Dela y Tim e 5.4 16.0 µs
Fall Ti me 3.6 11.0 µs

f

Turn-on Current Slope

on

Total In put Charge

i

VDD=15V; ID=3.5A
V

=5V; R

gen

=15V; ID=3.5A

V

DD

V

=5V; R

gen

=12V; ID=3.5A; VIN=5V

V

DD

I

=2.13mA

gen

=2.2KΩ

gen

gen=RIN MIN

=150Ω

100 300 ns

0.75 2.3 µs

6.5 A/µs

18 nC

SOURCE DRAIN DIODE

Symbol Parameter Tes t Conditions Min Typ Max Unit

(*) Forward On Voltage ISD=3.5A; VIN=0V 0.8 V

V

SD

Q

I

RRM

t

Reverse Recovery Time

rr

Reverse Recovery Charge 0.28 µC

rr

Reverse Re covery C urrent 2.5 A

=3.5A; dI/dt=20A/µs

I

SD

V

=30V; L= 20 0 µ H

DD

220 ns

7/21

VN772K

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued)

PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

Symbol Parameter Test Conditions Min Typ Max Unit

V

=5V; VDS=13V

I

lim

t

dlim

T

jsh

T

I

E

(*) Pulsed: Pulse dura tion = 300µs, duty cycle 1.5%

Drain C urr en t Lim it
Step Response Current

Limit
Overtem perature
Shutdown

Overt em peratur e Reset 135 °C

jrs

Fault Si nk Current VIN= 5V; VDS=13V; Tj=T

gf

Single Pu lse

as

Avalanche Energy

IN

V

=5V; VDS=13V; T

IN

V

=5V; VDS=13V

IN

starting T
V

IN

=25°C; VDD=24V

j

=5V; R

gen=RIN MIN

=125°C

j

jsh

=150Ω; L=24mH

6

91212A

6.5

4.0 µs

150 175 °C

15 mA

200 mJ

A

8/21

SWITCHING TIME WAVEFORMS

V

OUTn

80%

/dt

dV

OUT

(on)

V

INn

t

d(on)

DUAL HIGH-SIDE SWI TCH

10%

t

d(off)

90%

dV

OUT

/dt

VN772K

(off)

t

t

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

Current Limitation

Overtemperature

Undervoltage

Overvoltage

Output Voltage > V

Output Current < I

OL

OL

OPEN LOAD STATUS TIMING (with external pu ll -up)

V

> V

OUT

V

INn

V

STAT n

L

H

L
H
H

L
H

L
H

L
H

L
H

L
H

OL

I

OUT

< I

OL

V

INn

V

STAT n

L

H

L
X
X

(T

(T

< T

j

> T

j

L

L

L

L

L

L
H

H

L
H

OVER TEMP STATUS TIMING

Tj > T

t

SDL

TSD

TSD

TSD

) H

) L

H
H

H

H

L

X
X

H
H

L

H
H

L

t

SDL

t

DOL(off)

t

DOL(on)

9/21

1

VN772K

TYPICAL APPLICATION DIAGRAM

10/21

1

Figure1: Waveforms

INPUT

n

OUTPUT VOLTAGE
STATUS

V

CC

INPUT

n

OUTPUT VOLTAGE
STATUS

V

CC

INPUT

n

OUTPUT VOLTAGE
STATUS

VN772K

NORMAL OPERATION

n

n

UNDERVOLTAGE

V

USDhyst

V

USD

n

n

OVERVOLTAGE

VCC<V

OV

n

n

undefined

VCC>V

OV

INPUT

n

OUTPUT VOLTAGE
STATUS

INPUT

n

n

OUTP U T VO LTAG E
STATUS

T

INPUT

n

j

n

OUTPUT CURRENT

STATUS

n

OPEN LOAD wi th external pull-up

n

OPEN LOAD without external pull-up

V

n

T

TSD

T

R

n

V

OL

OVERTEMPE RATURE

OUT>VOL

11/21

11

VN772K

ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH

Off State Output Current

High Level Input Current

IL(off1) (u A)

2.5

2.25

2

1.75

1.5

1.25

1

0.75

0.5

0.25
0

-50 -25 0 25 50 75 100 125 150 175

Off state

Vcc=36V

Vin=Vout=0V

Iih (uA)

5

4.5

3.5

2.5

1.5

0.5

Vin=3.25V

4

3

2

1

0

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Input Clamp Voltage Status Leakage Current

Vicl (V)

8

7.8

7.6

7.4

7.2

7

6.8

6.6

6.4

6.2
6

Iin=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Ilstat (uA)

0.05

0.04

Vstat=5V

0.03

0.02

0.01

0

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Tc (°C)

12/21

Vstat (V)

0.8

0.7

Istat=1.6mA

0.6

0.5

0.4

0.3

0.2

0.1

0

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Status Clamp VoltageStatus Low Output Voltage

Vscl (V)

8

7.8

7.6

7.4

7.2

6.8

6.6

6.4

6.2

Istat=1mA

7

6

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued)

On State Resistance Vs T

case

On State Resistance Vs V

CC

VN772K

Ron (mOhm)

160

140

120

100

80

60

40

20

0

-50 -25 0 25 50 75 100 125 150 175

Iout=2A

Vcc=8V; 13V & 36V

Tc (°C)

Iol (mA)

150

140

130

120

110

100

90

80

70

60
50

Vcc=13V

Vin=5V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

Input High LevelOpenload On State Detection Threshold

Ron (mOhm)

120
110
100

90
80
70
60
50
40
30
20
10

0

5 10152025303540

Tc=150°C

Tc=25°C

Tc= - 40°C

Iout=5A

Vcc (V)

Vih (V)

3.6

3.4

3.2

3

2.8

2.6

2.4

2.2

2

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Vil (V)

2.6

2.4

2.2

2

1.8

1.6

1.4

1.2

1

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Input Hysteresis VoltageInput Low Level

Vhyst (V)

1.5

1.4

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

-50 -25 0 25 5 0 7 5 100 125 150 175

Tc (°C)

13/21

VN772K

ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued)

Overvoltage Shutdown

Openload Off State Voltage Detection Threshold

Vov (V)

50

48

46

44

42

40

38

36

34

32
30

-50 -25 0 25 50 75 100 125 150 175

Vol (V)

5

4.5

4

3.5

3

2.5

2

1.5

1

0.5
0

Vin=0V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Turn-on Voltage Slope Turn-off Voltage Slope

dVout/dt(on) (V/ms)

800

700

600

500

400

300

200

Vcc=13V

Rl=6.5Ohm

dVout/dt(off) (V/ms)

600

550

500

450

400

350

300

Vcc=13V

Rl=6.5Ohm

Tc (°C)

I

LIM

14/21

100

0

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

Vs T

case

Ilim (A)

20

18

16

14

12

10

8

6

4

2
0

Vcc=13V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

250

200

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

VN772K

ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCH

Source-Drain Diode Forward Characteristics

Vsd (mV)

1000

950

900

850

800

750

700

650

600

550
500

Vin=0V

0 2 4 6 8 101214

Id(A)

Derating Curve

Static Drain Source On Resistance

Rds(on) (mOhm)

500

450

400

350

300

250

200

150

100

50

0

0 0.25 0.5 0.75 1 1.25

Static Drain-Source On resistance Vs. Input
Voltage

Rds(on) (mOhm)

120
110
100

90
80
70
60
50
40
30
20
10

0

33.544.555.566.57

ES

Tj= - 40ºC

Vin=2.5V

Tj=25ºC

Tj=150ºC

Id(A)

Id=3.5A

Tj=150ºC

Tj=25ºC

Tj= - 40ºC

Vin(V)

Static Drain-Source On resistance Vs. Input
Voltage

Rds(on) (mOhm)

140

120

Tj=150ºC

100

80

Tj=25ºC

60

Tj=-40ºC

40

20

0

3 3.5 4 4.5 5 5.5 6 6.5

Vin(V)

Id=6A
Id=1A

Id=6A
Id=1A

Id=6A
Id=1A

Transconductance

Gfs (S)

20

18

16

14

12

10

8

6

4

2
0

Vds=13V

012345678

Id(A)

Tj=-40ºC
Tj=25ºC

Tj=150ºC

15/21

VN772K

ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCH

Static Drain-Source On Resistance Vs. Id

Rds(on) (mOhm)

140

120

100

80

60

40

20

0

00.511.522.533.544.555.56

Tj=150ºC

Tj=25ºC

Tj=-40ºC

Vin=3.5V

Vin=5V

Vin=3.5V

Vin=5V
Vin=3.5V

Vin=5V

Id(A)

Turn On Current Slope

di/dt(A/us)

8

7

6

5

4

3

2

1

0

100

200

300

400

500

Rg(ohm)

600

Vin=5V

Vdd=15V

Id=3.5A

700

800

900

1000

1100

Transfer Characteristics

Idon(A)

10

9

8

7

6

5

4

3

2

1

0

1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Turn On Current Slope

di/dt(A/us)

2.25

2

1.75

1.5

1.25

1

0.75

0.5

0.25
100 200 300 400 500 600 700 800 900 1000 1100

ES

(continued)

Vds=13.5V

Vin(V)

Rg(ohm)

Tj=25ºC
Tj=-40ºC
Tj=150ºC

Vin=3.5V
Vdd=15V

Id=3.5A

Input Voltage Vs. Input Charge

Vin(V)

8

7

6

5

4

3

2

1

0

0 5 10 15 20 25

16/21

Vds=12V

Id=3.5A

Qg(nC)

Turn off drain source voltage slope

dv/dt(V/us)

300

250

200

150

100

50

0

100 200 300 400 500 600 700 800 900 1000 1100

Rg(ohm)

Vin=5V

Vdd=15V

Id=3.5A

VN772K

ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCH

Turn Off Drain-Source Voltage Slope

dv/dt(v/us)

300

250

700

Vin=3.5V
Vdd=15V

Id=3.5A

800

900

200

150

100

50

0

100

200

300

400

500

600

Rg(ohm)

Switching Time Resistive Load

t(us)

5.5
5

4.5

3.5

2.5

1.5

0.5

Vdd=15V

Id=3.5A

Vin=5V

4

3

2

1

0

250

0

500

750

1000

1250

td(off)

td(on)

1500

1750

2000

Rg(ohm)

1000

2250

1100

tr

tf

2500

Capacitance Variations

C(pF)

600

500

400

300

200

100

0 5 10 15 20 25 30 35

Switching Time Re sist ive Load

t(ns)

1600

1400

1200

1000

800

600

400

200

0

3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25

ES

tr

(continued)

Vds(V)

td(off)

td(on)

Vin(V)

f=1MHz
Vin=0V

Vdd=15V

Id=3.5A

Rg=150ohm

tf

Output Characteristics

ID(A)

12

11

10

9
8
7
6
5
4
3
2

1

0

012345678910111213

VDS(V)

Vin=5V
Vin=4.5V
Vin=4V

Vin=3V

Vin=2.5V

Vin=2V

Normalized On Resistance Vs. Temperature

Rds(on)

2.25

2

1.75

1.5

1.25

1

0.75

0.5

Vin=5V
Id=3.5A

-50 -25 0 25 50 75 100 125 150 175

T(ºC)

17/21

VN772K

ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCH

Normalized Input Threshold Voltage Vs.

Current Limit Vs. Junction Temperature

Temperature

Vin(th)

1.15

1.1

1.05

1

0.95

0.9

0.85

0.8

0.75

0.7

-50 -25 0 25 50 75 100 125 150 175

T(ºC)

Vds=Vin

Id=1mA

Ilim (A)

15

14

13

12

11

10

9

8

7

6
5

-50 -25 0 25 50 75 100 125 150 175

Step Response Current Limit

Tdlim(us)

7

6.5

6

Vin=5V

Rg=150ohm

ES

(continued)

Vds=13V

Vin=5V

Tj (ºC)

5.5

5

4.5

4

3.5

5 101520253035

Vdd(V)

18/21

SO-28 MECHANICAL DATA

VN772K

DIM.

A 2.65 0.104

a1 0.10 0.30 0.004 0.012

b 0.35 0.49 0.013 0.019

b1 0.23 0.32 0.009 0.012

C 0.50 0.020

c1 45 (typ.)

D 17.7 18.1 0.697 0.713
E 10.00 10.65 0.393 0.419
e 1.27 0.050

e3 16.51 0.650

F 7.40 7.60 0.291 0.299
L 0.40 1.27 0.016 0.050
S8 (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

19/21

VN772K

SO-28 TUBE SHIPMENT (no suffix)

Base Q.ty 28
Bulk Q.ty 700

C

B

Tube length (± 0.5) 532

A 3.5
B 13. 8
C (± 0.1) 0.6

All dimensions are in mm.

A

TAPE AND REEL SHIPMENT (suffix “13TR”)

REEL DIMENSIONS

Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4

TAPE DIMENSIONS

According to Elec tronic Industrie s Association
(EIA) S tandard 481 rev. A , Feb 19 86

Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 12
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions ar e in mm.

20/21

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

VN772K

Information furnished is believed to be accurate and r eliable. Howev er, STMicroelectr onics assume s no r es ponsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMi c r oelectronic s . Specifications mentioned in this publication are
subject to c hange withou t notice. This publicatio n s upersedes and replaces all informati on previously s upplied. ST M icroelectr on ics product s
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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