Datasheet VN771 Datasheet (SGS Thomson Microelectronics)



VN771

QUAD SMART POWER SOLID STATE RELAY

FOR COMPLETE H-BRIDGE CONFIGURATIONS

TYPE R

VN77 1 0.140 Ω 14 A 26 V

* Total resistance of one side in bridge configuration

■ IDEAL AS A LOW VOLTAGEBRIDGE

■ VERYLOW STAND-BYPOWER

*I

DS(on)

OUT

V

CC

DISSIPATION

■ OVER-CURRENTPROTECTED

■ STATUSFLAG DIAGNOSTICSON UPPER

SIDE

■ OPENDRAIN DIAGNOSTICS OUTPUT

■ UNDER-VOLTAGEPROTECTION

■ SUITABLEAS QUADSWITCH

DESCRIPTION

The VN771 is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high side and two Power
MOSFETs. The double high side are made using
STMicroelectronics VIPower technology; Power
MOSFETs are made by using the new advanced
strip lay-out technology This device is suitable to
drive a DC motor in a bridge configurationas well
as to be used as a quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-down to protect the
chip from over temperature and short circuit,
status output to provide indication for open load
in off and on state, overtemperature conditions
and stuck-onto V

CC

.
DUALHIGH-SIDESWITCH
From the falling edge of the input signal, the

status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (

) respectively.

tpol

This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power

SO-28

MOS off at a minimum junction temperature of

o

C. When this temperature returns to 125oC

140
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
locatedinside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (V

demag

of -18V. This function allows to greatly reduces
the power dissipationaccordingto the formula:

P

dem

=0.5• L

load

• (I

load

)2• [(VCC+V

demag

)/V

demag

] • f

wheref = switching frequencyand
V

= demagnetizationvoltage.

demag

In this device if the GND pin is disconnected,with
V

not exceeding 16V, both channel will switch

CC

off.
PowerMOSFETs

During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The devices can be used as a
switchfrom DC to very high frequency.

)

October 1998

1/10

VN771

BLOCK DIAGRAM

2/10

CONNECTION DIAGRAM

VN771

PIN FUNCTION

No NAME FUNCTI O N

1, 3, 2 5 , 28 DRAI N 3 Drain of Switch 3 ( low-sid e switc h )

2 INPUT 3 Input o f Swit ch 3 (l ow-side s wit ch)

4, 11 N.C. Not Con nected

5, 10, 19, 24 V

6 GND Ground of Swit c h es 1 and 2 (h igh - si de swit ches )
7 IN PUT 1 Input of S witch 1 (h igh- s ide sw it ch)
8 DIAGNOSTIC Diagnostic of Switches 1 and 2 (high-side switches)
9 IN PUT 2 Input of S witch 2 (h igh- s ide sw it ch)

12, 14, 15, 1 8 DRAIN 4 Drain of Switch 4 ( low-sid e switc h )

13 INPUT 4 Input o f Swit ch 4 (l ow-side s wit ch)
16, 17 SOURCE 4 Source of Switch 4 (low-side switch)
20, 21 SOURCE 2 Source of Switch 2 (high-side swi tch )
22, 23 SOURCE 1 Source of Switch 1 (high-side swi tch )
26, 27 SOURCE 3 Source of Switch 3 (low-side switch)

CC

Drain of Switches 1a nd 2 ( h igh-side sw itches) and Pow er S upply V olt age

3/10

VN771

PROTECTION CIRCUITS

DUALHIGH SIDE SWITCH
The simplest way to protect the device against a

continuous reverse battery voltage (-26V) is to
insert a a smallresistor between pin 2 (GND) and
ground. The suggested resistance value is about
150Ω. In any case the maximumvoltage drop on
this resistor should not overcome 0.5V.

If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of V
V

.

stat

TRUTH TABLE (for Dual high-sideswitch only)

INP U T 1 INP UT 2 SO URC E 1 SO UR CE 2 DIAGNOSTIC

Normal O peration L

H

L

H
Under - voltag e X X L L H
Ther mal S h utdow n

Channel 1
Channel 2

Open Load

Channel 1

Channel 2

Out put Shorted to V

CC Channel1

Channel 2

NOTE: The low-side switches have the fault feedback which canbe detected by monitoring the voltage at the input pins.
L = Logic LOW, H= Logic HIGH, X = Don’t care

HXLX L

XHXL L

H

L

X

L

H

L

X

L

L
H
H

L

X

L
H

L
X

L
H

L

L

H

L

H

H

L

X

L

H
H

X

L

L
H
H

L

X

L
H

L
X

L
H

H

ih,Vil

H
H
H
H

L
L

L
L

L
L

L
L

and

ABSOLUTEMAXIMUM RATING (-40oC<Tj< 150oC)
HIGH SIDESWITCH

Symbol Para met e r Val u e Uni t

V

4/10

(BR)DSS

I

OUT

I

I

-V
I

STAT

V

ESD

P

T

T

Drain-Sou rc e B rek d own Volt a ge 40 V
Out put Current ( conti nuou s ) 14 A
Reverse Output Current -14 A

R

Input Curren t ±10 m A

IN

Reverse Supply Curren t -4 V

CC

Status Current ±10 mA
Electrostatic Discharge (C = 100 pF, R = 1.5 KΩ)
Power Dissipation @ Tc=25oC Int er na lly Limit e d W

tot

Junction Op er ating Temp erature -40 t o 150

j

St orage T emper at u r e -55 t o 150

stg

2000 V

o

C

o

C

VN771

ABSOLUTEMAXIMUM RATING (continued)

LOW SIDE SWITCH

Symbol Para met e r Val u e Uni t

V

V

DGR

V

I
I

I

DM(*)

dv/dt (1) Peak Diode Recovery Voltage Slope 7 V/ns

T

T

THERMALDATA

R

thj-case

R

thj-case

R

thj- amb

Drain-Sou rc e Voltage ( VGS=0) 60 V

DS

Drain-Gat e Vol t age (RGS = 20 KΩ)
Gate- Source Voltage ±20 V

GS

Drain Cur rent (con t inuous ) @ Tc=25oC36A

D

Drain Cur rent (con t inuous ) @ Tc=100oC24A

D

60 V

Drain Cur rent (pul sed) 144 A

St orage T emper at u r e -55 t o 150

stg

Oper ating Junc t ion Tempera t ure -40 t o 150 W/oC

j

Ther mal Res is t an ce Junc t io n- ca s e (High - side sw it ch) Max
Ther mal Res is t an ce Junc t io n- ca s e (Low- s id e switc h) M ax
Ther mal Res is t an ce Junc t io n- ambient Max

20
20
60

o

o

C/W

o

C/W

o

C/W

C

ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH

(8 <V

< 16 V; -40 ≤ Tj≤ 125oCunless otherwise specified)

CC

POWER

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

V

In(*) Nominal Current

R

I

V

DS(MAX)

R

Supply Volt a ge 6 13 26 V

CC

=85oCV

T

c

On State R es istance I

on

Supply Cur re nt Of f St at e Tj=25oCVCC=13V 35 100 µA

S

Maximum Volt a ge Drop I
Out put t o G ND int er nal

i

OUT=InVCC

=13A Tj=85oCVCC=13V 1.2 2 V

OUT

Tj=25oC51020KΩ

≤ 0.5 VCC=13V

DS(on)

=13V Tj=25oC 0.065 0.1 Ω

3.4 5.2 A

Im ped ance

SWITCHING

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

t

(^) Turn-on Delay Time Of

d(on)

Out put Current

(^) Ri se Tim e Of Output

t

r

Current

(^) Turn-o f f Delay Time O f

t

d(off)

Out put Current

(^) Fall Time Of Output

t

f

Current

=2.7Ω

R

out

=2.7Ω 28 110 360

R

out

=2.7Ω 10 140 500

R

out

=2.7Ω 28 75 360

R

out

535200µs

µs

µs

µs

5/10

VN771

ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)

(di/dt)onTurn-on Current Slope
(di/dt)

Turn-off Current Sl ope

off

=2.7Ω 0.003 0. 1 A /

R

out

=2.7Ω 0.005 0. 1 A /

R

out

LOGIC INPUT

Symb o l P a ramete r Test Cond iti ons Min. T yp. Ma x. Un it

V

Input Low Level

IL

1.5 V

Voltage

V

Input High Lev el

IH

3.5 (•)V

Voltage

V

I(hyst.)

Input Hyster esis

0.2 0.9 1.5 V

Voltage

I

V

Input Current VIN=5V Tj=25oC30100µA

IN

Input Clamp Voltage IIN=10mA

ICL

=-10mA

I

IN

56

-0.7

7V

PROTECTION AND DIAGNOSTICS

Symb o l P a ramete r Test Cond iti ons Min. T yp. Ma x. Un it

V

STAT

V

USD

V

SCL

T

TSD

T

SD(hyst.)

T

V

I

t

povl

t

(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) See switching time waveform
() The V
exceed 10 mA at the input pin.
note 1: The Nominal Current is the current at T
note 2: I
note 3: t

Status Voltage Output

I

=1.6mA 0.4 V

ST AT

Low
Under Volt age Shut

3.5 4.5 6 V

Down
Status Clam p Voltage I

Thermal Shut-down

ST AT

I

ST AT

=10mA
=-10mA

56

-0.7

140 160 1 80

7V

Tem perature
Thermal Shut-down

50

Hysteresis
Reset Tem per a tu r e 125

R

Open V o lt age Level Off-State (no t e 2 ) 2.5 4 5 V

OL

Open Load Curren t

OL

On-State 0.6 0.9 1.4 A

Level
Status Dela y (note 3) 5 10 µs

Status Dela y (note 3) 50 500 2500 µ s

pol

is internally clampedat6V about. Itis possible to connect this pin to an higher voltage via an external resistor calculated to not

IH

=85oC forbattery voltage of 13V which produces a voltage drop of 0.5 V

=(VCC-VOL)/R

OL(off)

: ISO definition

povltpol

OL

c

µs
µs

V

V

o

C

o

C

o

C

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCH

6/10

VN771

(T

=25oC unless otherwisespecified)

case

OFF

Symb o l P a ramete r Test Cond iti ons Min. T yp. Ma x. Un it

V

(BRDSS)

Drain-source

=250µAVGS=0

I

D

Brekdown Voltage

=0)

V

= Max R at ing

DS

= Max R at ing , TC=125oC

V

DS

= ± 20 V

V

GS

I

DSS

I

GSS

Zero Gate Voltage
Drain Curren t (V

GS

Gate-Body Leaka ge
Current (V

DS

=0)

ON (∗)

Symb o l P a ramete r Test Cond iti ons Min. T yp. Ma x. Un it

V

GS(th )

R

DS(on)

I

D(on)

Gate Threshold
Voltage

Static Drain-Sou rc e
On Resistance

On State Drain
Current (V

DS

=0)

V

DS=VGSID

=250µA

VGS=10V ID=18A 0.032 0.04 Ω

V

DS>ID(on)xRDS(on) ma x

VGS=10V

60 V

1

10

± 100 nA

12.5V

36 A

µA
µA

DYNAMIC

Symb o l P a ramete r Test Cond iti ons Min. T yp. Ma x. Un it

g

(∗)Forward

fs

VDS>I

D(on)xRDS(on) ma xID

= 18A 7 S

Transconductance

C

C

C

Input Capac it ance

iss

Outp ut C apac itance

oss

Revers e Transfer

rss

VDS=25V f=1MHz VGS= 0 2115

260

65

2800

350

90

Capacit an c e

SWITCHING-ON (**)

Symb o l P a ramete r Test Cond iti ons Min. T yp. Ma x. Un it

t

d(on)

t

r

(di/dt)

Q

Q

gs

Q

gd

Turn-on Tim e
Rise T i m e

Turn-on Current Slope VDD=48V ID=36A

on

Total Gate Charge

g

Gate-Source Charge

VDD = 30 V ID=18A

=4.7Ω VGS=10V

R

G

=47Ω VGS=10V

R

G

VDD=48V ID=36A

=10V

V

GS

Gate-Drain C harge

28
85

250 A/µs

50
13
18

40

115

70 nC

SWITCHING-OFF

Symb o l P a ramete r Test Cond iti ons Min. T yp. Ma x. Un it

t

r(Voff)

t
t

Off -Voltage Rise Time
Fall Time

r

Cross -O ver T i m e

c

VDD=48V ID=36A

=4.7Ω VGS=10V

R

G

12
25
40

16
35
55

pF
pF
pF

ns
ns

nC
nC

ns
ns
ns

7/10

VN771

ELECTRICAL CHARACTERISTICS FOR DUAL LOW SIDE SWITCH (continued)

SOURCE-DRAINDIODE

Symb ol Param et e r Test Con d i ti ons Min. Typ . Max. Un it

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, dutycycle 1.5 %
(∗∗) Pulse width limited by Safe Operating Area.

Source-Drain C urrent

(∗∗)

Source-Drain C urrent

36

144

(pulsed)

(∗) For war d On Vol t age ISD=36A VGS=0 1.5 V

Reverse Recover y

rr

Time
Reverse Recover y

rr

=36A, di/dt=100A/µs

I

SD

=30V Tj=150oC

V

r

75

245
Charge
Reverse Recover y

6.5

Current

A
A

ns

nC

A

TYPICALAPPLICATION DIAGRAM

8/10

SO-28 MECHANICAL DATA

VN771

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.65 0.104

a1 0.10 0.30 0.004 0.012

b 0.35 0.49 0.013 0.019

b1 0.23 0.32 0.009 0.012

C 0.50 0.020

c1 45 (typ.)

D 17.7 18.1 0.697 0.713
E 10.00 10.65 0.393 0.419

e 1.27 0.050

e3 16.51 0.650

F 7.40 7.60 0.291 0.299

L 0.40 1.27 0.016 0.050

S 8 (max.)

mm inch

0016572

9/10

VN771

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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