Datasheet VN30NSP Datasheet (SGS Thomson Microelectronics)



VN30NSP

HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE V

VN30 NS P 60 V 0.03 Ω 45 A 26 V

■ OUTPUTCURRENT(CONTINUOUS):

45 A @ T

■ 5 V LOGIC LEVELCOMPATIBLEINPUT

■ THERMALSHUT-DOWN

■ UNDERVOLTAGE SHUT-DOWN

■ OPENDRAIN DIAGNOSTIC OUTPUT

■ VERY LOW STAND-BY POWER

DSS

=25oC

c

R

DS(on)

I

OUT

V

CC

DISSIPATION

DESCRIPTION

The VN30NSP is a monolithic devices made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.

Built-in thermal shut-down protects the chip from
over temperatureand short circuit.

The input control is5V logic level compatible.
The open drain diagnostic output indicates open

circuit(no load) and over temperaturestatus.

BLOCK DIAGRAM

10

1

PowerSO-10

July 1998

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VN30NSP

ABSOLUTEMAXIMUMRATING

Symbol Parameter Value Unit

V

(BR)DSS

I

OUT

I

I

-V
I

STAT

V

ESD

P

T

T

CONNECTIONDIAGRAMS

Drain-S o ur ce Breakdown V olt age 60 V
Out put Cu r rent (cont. ) 45 A
Revers e Out put Current -45 A

R

Input Current ±10 mA

IN

Reverse Supply V oltage -4 V

CC

St at us Cur rent ±10 mA
Elect r o st at ic Dischar ge (1.5 kΩ, 100 pF ) 2000 V
Power Dissipation at Tc≤ 25oC 108 W

tot

Junction O perat in g T em pe r at ure -40 t o 150

j

St orage Tem per atur e -55 t o 150

stg

o

C

o

C

CURRENT ANDVOLTAGECONVENTIONS

2/8

VN30NSP

THERMALDATA

R

thj-case

R

thj- amb

($) When mounted using minimum recommended pad size on FR-4 board

ELECTRICAL CHARACTERISTICS (VCC=13 V; -40 ≤ Tj≤ 125oC unless otherwisespecified)
POWER

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

R

I

SWITCHING

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

t

d(off)

(di/dt)

(di/dt)

Ther mal Resis t ance Junc t io n-c ase Max
Ther mal Resis t ance Junc t io n-am bien t Max

Supply Voltage 7 26 V

CC

On Stat e Resist a nce I

on

Supply Current Of f Stat e Tj≥ 25oC

S

=18A

OUT

=18A Tj=25oC

I

OUT

1.15
50

On State

Turn-on Delay Time Of
Out put Cu r rent

Rise TimeOf Output

t

r

Current
Turn-off Delay Time Of

Out put Cu r rent
Fall T ime Of Output

t

f

Current
Tur n-on Current S lope I

on

Tur n-of f C urrent Slope I

off

I

= 18 A Resistive L oad

OUT

Input Rise Time < 0.1 µsT
I

= 18 A Resistive L oad

OUT

Input Rise Time < 0.1 µsT
I

= 18 A Resistive L oad

OUT

Input Rise Time < 0.1 µsT
I

= 18 A Resistive L oad

OUT

Input Rise Time < 0.1 µsT

=18A

OUT

I

OUT=IOV

=18A

OUT

I

OUT=IOV

j

j

j

j

=25oC

=25oC

=25oC

=25oC

30 µs

100 µs

80 µs

40 µs

0.06

0.03
50

15

0.53A/µs

3
4

o

C/W

o

C/W

Ω
Ω

µA

mA

A/µs
A/µs

A/µs

LOGIC INPUT

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

Input Low Level

IL

0.8 V

Volt age

V

Input Hig h Lev el

IH

2(*)V

Volt age

V

I(hyst.)

Input Hysteresis

0.5 V

Volt age

I

V

Input Current VIN= 5 V 250 5 00 µA

IN

Input Cla m p Volt ag e IIN=10mA

ICL

=-10mA

I

IN

6

-0.7

PROTECTIONS AND DIAGNOSTICS

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(•) St at us V oltage Output

STAT

Low

V

USD

Under Voltage Shut
Down

I

=1.6mA 0.4 V

STAT

6.5 7 V

V
V

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VN30NSP

ELECTRICAL CHARACTERISTICS (continued)

PROTECTION AND DIAGNOSTICS(continued)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(•) Stat us Clam p Volt age I

SCL

t

SC

I

OV

I

I

T

TSD

T

(*) The VIHis internally clamped at 6V about. Itis possible to connectthis pin to an highervoltage via anexternal resistor calculated to not
exceed 10 mA at the input pin.
(•) Status determination > 100 µs afterthe switchingedge.

Swit ch-of f Tim e in
Short Circ u it Condition
at Start-Up

Over Current R
Aver age Current in

AV

Short Circuit
Open Load Cur rent

OL

Level
Ther mal Shut- d own

Tem perature
Reset Temperat u r e 125

R

=10mA

STAT

=-10mA

I

STAT

R

<10mΩ Tc=25oC1ms

LOAD

<10mΩ -40 Tc125oC 140 A

LOAD

R

<10mΩ Tc=85oC2.5A

LOAD

5 1250 mA

140

6

-0.7

V
V

o

C

o

C

FUNCTIONAL DESCRIPTION

The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processedby internallogic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
temperature returns to about 125

o

C. When the

o

C theswitch is
automaticallyturnedon again.
In short circuit conditions the protection reacts
with virtuallyno delay, the sensor being locatedin
the region of the die where the heat is generated.

PROTECTING THE DEVICE AGAINST
REVERSEBATTERY

The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode betweenpin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).

The consequences of the voltage drop across
this diode are as follows:

- If the input is pulled to power GND, a negative

voltage of -V
thresholds and V
respectto power GND).

The undervoltageshutdown level is increased by
V

.

F

If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.

In this way no shift of V
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdownvoltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.

is seen by the device. (VIL,V

F

are increased by VFwith

STAT

IH,VIL

and V

STAT

IH

takes

4/8

TRUTH TABLE

INPUT OUTPUT DIAGNOSTIC

Normal Opera ti on L

H
Open Circ uit (No Load) H H L
Ov er- temperature H L L
Under-voltage X L H

L

H

Figure1: Waveforms

VN30NSP

H
H

Figure2: Over Current Test Circuit

5/8

VN30NSP

Figure3: TypicalApplicationCircuitWith A SchottkyDiode For Reverse Supply Protection

Figure4: TypicalApplicationCircuitWith Separate Signal Ground

6/8

PowerSO-10MECHANICAL DATA

VN30NSP

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.35 3.65 0.132 0.144

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

c 0.35 0.55 0.013 0.022

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240

e 1.27 0.050

F 1.25 1.35 0.049 0.053

H 13.80 14.40 0.543 0.567

h 0.50 0.002

L 1.20 1.80 0.047 0.071

q 1.70 0.067

α 0

o

o

8

==

==

HE

h

A

F

A1

610

51

eB

M

0.25

D

==

D1

==

DETAIL”A”

E2

==

DETAIL”A”

Q

B

0.10 A

E1E3

==

SEATING
PLANE

A

C

α

B

E4

==

SEATING

PLANE

A1

L

==

0068039-C

7/8

VN30NSP

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights ofSTMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publicationsupersedes andreplaces all information previously supplied.STMicroelectronics products
are not authorized foruse as critical components in lifesupport devices or systems withoutexpress written approval of STMicroelectronics.

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