Page 1
DATA SHEET
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
PPPP
2.9 GHz WIDE BAND AMPLIFIER
SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
FEATURES
• High power gain : 13 dB TYP. @ f = 1 GHz
• Excellent frequency response: 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
• Noise figure : 5 dB
• Single supply voltage : 5 V
• Input and output matching : 50
• Super small package : 6 pin mini mold
:
PC2711T
ORDERING INFORMATION
PART NUMBER PACKAGE SUPPLYING FORM
P
PC2711T-E3 6 pin mini mold Embossed tape 8 mm wide.
Pin 1, 2, 3 face to perforation side of the tape.
EQUIVALENT CIRCUIT PIN CONNECTIONS
VCC
OUT
(Top View)
IN
GND
3
2
1
4
1. INPUT
5
2. GND
3. GND
4. OUTPUT
6
C 1 G
5. GND
CC
6. V
(Bottom View)
4
5
6
3
2
1
Document No. P12428EJ2V0DS00 (2nd edition)
(Previous No. IC-2948)
Date Published March 1997 N
Printed in Japan
Caution: Electro-static sensitive devices
1993©
Page 2
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
PPPP
PC2711T
CC
CC
opt
stg
6V
30 mA
D
in
280
*
40 to +85 °C
ð
55 to +150 °C
ð
+10 dBm
mW
Supply Voltage V
Total Circuit Current I
Power Dissipation P
Operating Temperature T
Storage Temperature T
Input Power P
Mounted on 50 u 50 u 1.6 mm epoxy glass PWB (TA = +85 °C)
*
RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
'
CC
CC
P
O(sat)
U
out
G
4.5 5.0 5.5 V
)
::::
9 12 15 mA No signal
11 13 16.5 dB f = 1 GHz
ð2 +1 dBm f = 1 GHz, Pin = 0 dBm
2.7 2.9 GHz 3 dB down below flat gain
f = 0.1 GHz
in
P
20 25 dB f = 1 GHz
9 12 dB f = 1 GHz
±0.8 dB f = 0.1 to 2.5 GHz
Supply Voltage V
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5 V, ZS = ZL = 50
PARAMETERS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Circuit Current I
Power Gain G
Maximum Output Level P
Noise Figure NF 5 6.5 dB f = 1 GHz
Upper Limit Operating Frequency f
Isolation ISL 25 30 dB f = 1 GHz
Input Return Loss RL
Output Return Loss RL
Gain Flatness
2
Page 3
TEST CIRCUIT
C
50 Ω
1
IN
1 000 pF
EXAMPLE OF APPLICATION CIRCUIT
V
CC
1 000 pF
C
1
PPPP
PC2711T
V
CC
3
6
C
2
4
50 Ω
OUT
1 000 pF
2, 3, 5
IN
50 Ω
1
C
1 000 pF
1 000 pF
C
1
3
6
C
4
4
1 000 pF
C
1 000 pF
R
1
5
1
6
1 000 pF
C
6
4
2
C
1 000 pF
50 Ω
OUT
50 to 200 Ω
2, 3, 5
2, 3, 5
To stabilize operation,
1
, C
please connect R
5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Capacitors for VCC, input and output pins
1 000 pF capacitors are recommendable as bypass capacitor for V
CC
pin and coupling capacitors for input/output
pins.
Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be
supplied against VCC fluctuation.
Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC.
To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF
capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling
capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 S fZs).]
3
Page 4
TYPICAL CHARACTERISTICS (TA = 25 °C)
PPPP
PC2711T
20
18
16
14
12
10
8
6
ICC – Circuit Current – mA
4
2
0 123456
20
8
7
6
15
10
5
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
V
CC – Supply Voltage – V
NOISE FIGURE AND INSERTION
POWER GAIN vs. FREQUENCY
VCC = 5.5 V
VCC = 5.5 V
VCC = 5.0 V
G
P
VCC = 4.5 V
CIRCUIT CURRENT vs.
20
18
16
14
12
10
8
6
ICC – Circuit Current – mA
4
2
0
15
10
OPERATING TEMPERATURE
–40 –20 40 60 80
T
opt – Operating Temperature – °C
INSERTION POWER GAIN vs. FREQUENCY
TA = –40 °C
TA = +85 °C
0–60 20 100
TA = +25 °C
TA = –40 °C
VCC = 5.0 V
TA = +85 °C
TA = +25 °C
5
NF – Noise Figure – dB
4
0
VCC = 4.5 V
GP – Insertion Power Gain – dB
–5
0.1 0.3 1.0 3.0
0
–10
–20
–30
ISL – Isolation – dB
–40
–50
0.1
NF
f – Frequency – GHz
ISOLATION vs. FREQUENCY
0.3 1.0 3.0
f – Frequency – GHz
VCC = 5.0 V
V
CC = 5.0 V
GP – Insertion Power Gain – dB
CC = 5.0 V
5
0.1 0.3 1.0 3.0
f – Frequency – GHz
INPUT RETURN LOSS, OUTPUT
0
–10
–20
–30
out – Output Return Loss – dB
RL
RLin – Input Return Loss – dB
–40
RETURN LOSS vs. FREQUENCY
RLout
0.1
0.3 1.0 3.0
f – Frequency – GHz
V
VCC = 5.0 V
RLin
4
Page 5
PPPP
PC2711T
OUTPUT POWER vs. INPUT POWER
5
f = 1.0 GHz
0
–5
–10
– Output Power – dBm
O
P
–15
–20
–35
–30 –25 –20 –15 –10 –5 0 5
P
in
– Input Power – dBm
OUTPUT POWER vs. INPUT POWER
5
f = 2.0 GHz
0
–5
–10
5.5 V
4.5 V
5.5 V
4.5 V
VCC = 5.0 V
VCC = 5.0 V
OUTPUT POWER vs. INPUT POWER
5
CC
= 5.0 V
V
f = 1.0 GHz
0
–5
–10
– Output Power – dBm
O
P
–15
–20
–30 –25 –10 –5 0
P
in
– Input Power – dBm
OUTPUT POWER vs. INPUT POWER
5
VCC = 5.0 V
0
–5
–10
+85 °C
TA = +25 °C
–40 °C
–20 °C
–20–35 –15 5
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 2.9 GHz
– Output Power – dBm
O
P
–15
–20
–35 5
–30 –25 –20 –15 –10 –5 0
P
in
– Input Power – dBm
SATURATED OUTPUT POWER vs.
FREQUENCY
10
5.5 V
5
VCC = 5.0 V
in
= 0 dBm
P
0
4.5 V
–5
–10
– Saturated Output Power – dBm
O(sat)
P
–15
0.1
0.3 1.0 3.0
f – Frequency – GHz
– Output Power – dBm
O
P
–15
–20
–35 5
–30 –25 –20 –15 –10 –5 0
P
in
– Input Power – dBm
THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
–50
f1 = 1 .000 GHz
f
2
= 1 .002 GHz
–40
VCC = 5.0 V
–30
–20
4.5 V
–10
– 3rd Order Intermodulation Distortion – dBc
3
0
IM
–20 –18 –16 –14 –12 –10 –8 –6 –4 –2 0
P
O(each)
– Output Power of Each Tone – dBm
5.5 V
5
Page 6
S PARAMETER
S11-FREQUENCY
PPPP
PC2711T
0.13
0.12
0.11
0.10
0.40
0.09
0.41
0.42
N
O
(
Z
IVE
0.5
–130
110
120
0.6
0.5
T
N
E
0.3
0.4
T
A
G
NE
0.6
0.7
–120
0.08
0.42
0.09
0.41
0.08
0.07
0.43
130
0.06
0.44
0.05
140
P
0.4
M
0.45
R
O
T
A
R
0.04
E
0.46
N
E
G
D
R
0.03
A
S
0.47
E
W
E
O
R
T
G
S
E
H
D
T
0.02
G
0.48
N
I
N
T
E
N
L
E
E
I
V
C
A
F
0.01
0.49
W
F
E
O
C
0
N
0
0
O
I
T
C
E
L
F
E
R
0.01
0.1
0.49
F
O
E
L
G
N
0.02
A
0.48
–160
0.03
0.47
0.04
0.46
CO
E
C
N
A
T
)
0.3
C
150
A
O
E
+JX
R
––––
(
E
V
Z
I
T
I
OS
P
0.2
0.1
0.1
0.2
T
0.2
N
E
N
O
P
)
OM
O
C
E
0.3
C
– JX
N
––––
–150
A
T
C
A
E
R
0.4
0.05
–140
0.45
0.06
0.44
000.07
0.43
0.38
0.39
100
0.9
0.8
0.7
1.0 G
0.5
0.6
0.7
0.8
REACTANCE COMPONENT
R
––––
(
)
Z
O
0.8
0.9
–110
–100
0.10
0.11
0.40
0.39
90
1.0
0.2
0.9
1.0
0.1 G
0.2
1.0
0.12
0.38
0.37
0.14
0.15
0.36
80
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
2.9 G
0.2
1.2
1.4
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
1.2
–90
0.13
0.37
0.16
0.35
0.34
0.17
70
0.33
0.18
0060
1.4
1.6
1.0
1.6
1.8
2.0
1.0
1.4
–70
–80
0.15
0.04
0.35
0.36
0.32
1.8
3.0
1.8
–60
1.6
0.16
0.34
0.19
50
0.31
2.0
4.0
2.0
0.17
0.33
0.20
40
0.30
0.21
3.0
0.29
30
0.22
4.0
0.28
20
6.0
0.23
0.27
10
10
0.24
0.26
20
50
0.25
0.25
0
20
10
5.0
50
50
0.24
0.26
20
–10
10
0.23
0.27
–20
0.22
6.0
0.28
4.0
000.21
–30
0.29
3.0
0.20
–40
0.30
0.19
0.31
–50
0.18
0.32
S22-FREQUENCY
0.13
0.12
0.11
0.10
0.40
0.09
0.41
0.42
N
O
(
Z
IVE
T
0.5
–130
110
120
0.6
0.5
T
N
E
0.3
0.4
A
G
NE
0.6
0.7
–120
0.08
0.42
0.09
0.41
0.08
0.07
0.43
130
0.06
0.44
0.05
140
P
0.4
M
0.45
R
O
T
A
R
0.04
E
0.46
N
E
G
D
R
0.03
A
S
0.47
E
W
E
O
R
T
G
S
E
H
D
T
0.02
G
0.48
N
I
N
T
E
N
L
0.1
E
E
I
V
C
A
F
0.01
0.49
W
F
E
O
C
0
N
0
0
O
I
T
C
E
L
F
E
R
0.01
0.1
0.49
F
O
E
L
G
N
0.02
A
0.48
–160
0.03
0.47
0.04
0.46
CO
E
C
N
A
T
)
0.3
C
150
A
O
E
+JX
R
––––
(
E
V
Z
I
T
I
OS
P
0.2
0.1
0.2
T
0.2
N
E
N
O
P
)
OM
O
C
E
0.3
C
– JX
N
––––
–150
A
T
C
A
E
R
0.4
0.05
–140
0.45
0.06
0.44
000.07
0.43
0.38
0.39
100
0.9
0.8
0.7
0.5
0.6
0.7
0.8
REACTANCE COMPONENT
R
––––
(
)
Z
O
0.8
0.9
–110
–100
0.10
0.11
0.40
0.39
90
1.0
0.9
1.0
0.1 G
1.0
0.12
0.38
0.37
0.2
0.2
0.4
–90
0.4
0.6
0.6
0.4
1.0 G
0.2
1.2
0.6
0.8
0.6
0.4
0.2
0.13
0.37
0.14
0.36
80
0.2
0.8
1.0
0.8
1.4
2.9 G
1.0
0.8
1.2
–80
0.15
0.16
0.35
0.34
0.15
–70
0.35
0.17
0.33
0.18
0060
1.6
0.32
1.8
2.0
3.0
1.8
–60
1.6
0.16
0.34
0.19
50
0.31
0.20
40
0.30
0.21
3.0
0.29
30
0.22
4.0
0.28
20
6.0
0.23
0.27
10
10
0.24
0.26
20
50
0.25
0.25
0
20
10
5.0
4.0
2.0
0.17
0.33
50
50
0.24
0.26
20
–10
10
0.23
0.27
–20
0.22
6.0
0.28
4.0
000.21
–30
0.29
3.0
0.20
–40
0.30
0.19
0.31
–50
0.18
0.32
70
1.4
1.0
1.6
1.8
2.0
1.0
1.4
0.04
0.36
6
Page 7
Illustration of evaluation board for the test circuit
9– 7.5
φ
Through holes
2.52.52.52.533
5
7.5
22
2.52.52.52.5
7.5
15
5
72– 0.5
φ
Through holes
10 10
2.52.5 2.5
(Back side)
2.5
φ
22
2.52.5 2.5
2.5
2
15
0.4
3 4.8
PPPP
PC2711T
2.8
1.21.2
0.4
0.2
0.2
IN
V
CC
φ
0.9
0.75
3.6
2.8
30±0.05
(Surface)
φ
15
OUT
2
0.75
7.5
1.2
4.8
30±0.05
15
Note
(1) 30
30
0.4 mm double sided copper clad polyimide board.
uuuu
uuuu
(2) Back side: GND pattern
(3) Solder plated on pattern
(4) : Through holes
7
Page 8
6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit: mm)
+0.1
0.3
–0.05
123
–0.3
–0.1
+0.2
+0.2
1.5
2.8
65
4
0.13±0.1
0 to 0.1
PPPP
PC2711T
1.9
2.9±0.2
1.1
0.8
+0.2
–0.1
0.950.95
8
Page 9
PPPP
PC2711T
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (which can cause
abnormal oscillation).
(3) Keep the track length of the ground pins as short as possible.
(4) Connect a bypass capacitor (having, for example, a capacitance of 1 000 pF) to the VCC pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions. Other soldering methods and
conditions than the recommended conditions are to be consulted with our sales representatives.
PC2711T
P
Soldering method Soldering conditions
Infrared ray reflow Package peak temperature: 235 °C,
Hour: within 30 s. (more than 210 °C),
Time: 3 times, Limited days; no.*
VPS Package peak temperature: 215 °C,
Hour: within 40 s. (more than 200 °C),
Time: 3 times, Limited days: no.*
Wave soldering Soldering tub temperature: less than 260 °C,
Hour: within 10 s.
Time: 1 time, Limited days: no.
Pin part heating Pin area temperature: less than 300 °C,
Hour: within 3 s.
Limited days: no.*
: It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH.
*
Note 1.
The combined use of soldering method is to be avoided (However, except the pin area heating method).
Recommended condition
symbols
IR35-00-3
VP15-00-3
WS60-00-1
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
9
Page 10
[MEMO]
PPPP
PC2711T
10
Page 11
[MEMO]
PPPP
PC2711T
11
Page 12
PPPP
PC2711T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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