Datasheet UPC2709TB-E3, UPC2709TB, UPC2709T-E3, UPC2709T Datasheet (NEC)

DATA SHEET

BIPOLAR ANALOG INTEGRATED CI RCUITS

PC2709TB

µµµµ

5 V, SUPER MINIMOLD SILICON MMIC

MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION

The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is

packaged in super minimold package which is smaller than conventional minimold.

The µPC2709TB has compatible pin connections and performance to µPC2709T of conventional minimold

version. So, in the case of reducing your system size, µPC2709TB is suitable to replace from µPC2709T.

These IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• High-density surface mounting: 6-pin super minimold package

• Supply voltage : VCC = 4.5 to 5.5 V

• Wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth

• Medium output power : P

• Power gain : GP = 23 dB TYP. @f = 1 GHz

• Port impedance : input/output 50

APPLICATIONS

• 1st IF amplifiers in DBS converters

• RF stage buffer in DBS tuners, etc.

ORDERING INFORMATION

PART NUMBER PACKAGE MARKING SUPPLYING FORM

µ

PC2709TB-E3 6-pin super minimold C1E Embossed tape 8 mm wide.

Remark

To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:

PC2709TB)

µ

O (sat)

= +11.5 dBm@f = 1 GHz with external inductor

Ω

1, 2, 3 pins face the perforat i on side of the tape.
Qty 3 kpcs/reel.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P12653EJ2V1DS00 (2nd edition)
Date Published May 2000 N CP(K)
Printed in Japan

Caution: Electro-static sensitive devices

©

1997, 2000

PIN CONNECTIONS

µµµµ

PC2709TB

(Top View)

C1E

u

f

(GHz)

4

5

6

PC2709 (TA = +25°C, VCC = V

µµµµ

O (sat)

P
(dBm)

3

2

1

PRODUCT LINE-UP OF

PART NO.

PC2709T 6 pin minimold

µ

PC2709TB 6 pin super minimold

µ

Remark

Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.

4

5

6

(Bottom View)

P

G

(dB)

3

2

1

out

= 5.0 V, ZS = ZL = 50

NF

(dB)

CC

I

(mA)

Pin NO. Pin name

)

ΩΩΩΩ

PACKAGE MARKING

Caution The package size distinguishes between minimold and super minimold.

1 INPUT
2GND
3GND
4OUTPUT
5GND
6V

CC

C1E25523+11.52.3

2

Data Sheet P12653EJ2V1DS00

SYSTEM APPLICATION EXAMPLE

EXAMPLE OF DBS CONVERTERS

µµµµ

PC2709TB

BS Antenna (DBS ODU)

RF Amp. Mixer

Parabola
Antenna

Oscillator

IF Amp.

µ

PC2709TB

EXAMPLE OF 900 MHz BAND, 1.5 GHz BAND DIGITAL CELLULAR TELEPHONE

RX

SW

PLL

PLL

DEMO

To IDU

I

Q

Driver

TX

PA

PC2709TB

µ

To know the associated products, please refer to each latest data sheet.

F/F

0 °

90 °

I

× 2

Q

Data Sheet P12653EJ2V1DS00

3

PIN EXPLANATION

µµµµ

PC2709TB

Pin
NO.

Pin

Name

1 INPUT

4 OUTPUT Voltage

6VCC4.5 to 5.5

GND 0

2
3
5

Applied
voltage
(V)

−

as same

CC

as V
through
external
inductor

Pin
voltage

Note

(V)

1.05 Signal input pin. A internal

−

−

−

Function and applications Internal equivalent circ ui t

matching circuit, configured with
resistors, enables 50 Ω connec­tion over a wide band.
A multi-feedback ci rcuit is de­signed to cancel the deviations of

FE

h

and resistance.
This pin must be coupled to sig­nal source with capacitor for DC
cut.

Signal output pin. The induct or
must be attached between V
and output pins to supply c urrent
to the internal output transi stors.

Power supply pin, which bias es
the internal input transis tor.
This pin should be externally
equipped with bypass capaci t or
to minimize its i m pedance.

Ground pin. This pin should be
connected to system ground with
minimum inductance. Ground
pattern on the board should be
formed as wide as possible.
All the ground pins must be c on­nected together with wide ground
pattern to decrease impedance
defference.

6

CC

V

4

OUT

CC

1

IN

23 5

GNDGND

4

Pin voltage is measured at V

Note

CC

= 5.0 V

Data Sheet P12653EJ2V1DS00

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT CONDITIONS

µµµµ

PC2709TB

Supply Voltage V
Total Circuit Current I
Power Dissipation P

Operating Ambient Temperature T
Storage Temperature T
Input Power P

CC

CC

D

A

stg

in

6VT

60 mA TA = +25°C

200 mW Mounted on double copper c l ad 50 × 50 × 1.6 mm

40 to +85 °C

−

55 to +150 °C

−

+10 dBm

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTICE

Supply Voltage V

Operating Ambient Temperature T

CC

A

4.5 5.0 5.5 V The same voltage shoul d be appl i ed to pin

40 +25 +85 °C

−

ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = V

PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Circuit Current I
Power Gain G
Maximum Output Level P
Noise Figure NF
Upper Limit Operating Frequency f
Isolation ISL 26 31
Input Return Loss RL
Output Return Loss RL
Gain Flatness

CC

O (sat)

G

∆

19 25 32 mA No Signal

P

21.0 23.0 26.5 dB f = 1 GHz
+9.0 +11.5

5.0 6.5 dB f = 1 GHz

−

u

in

out

P

2.0 2.3

710
710

−±

1.0

A

= +25°C, Pin 4 and 6

epoxy glass PWB (T

4 and 6.

out

= 5.0 V, ZS = ZL = 50

dBm f = 1 GHz, Pin = 0 dBm

−

GHz 3 dB down below f l at gain at f = 0.1 GHz

−

dB f = 1 GHz

−

dB f = 1 GHz

−

dB f = 1 GHz

−

dB f = 0.1 to 1.8 GHz

−

ΩΩΩΩ

)

A

= +85°C)

Data Sheet P12653EJ2V1DS00

5

TEST CIRCUIT

1 000 pF

C

3

µµµµ

PC2709TB

V

CC

6

1

C

1 000 pF 1 000 pF

1

2, 3, 5

L

C

2

4

50 Ω50 Ω

OUTIN

Components of test circuit for
measuring electrical characteristics Example of actural application components

TYPE VALUE TYPE VALUE OPERATING FREQUENCY

3

C

L Bias Tee 1 000 nH L Chi p i nductor 300 nH 10 M Hz or hi gher

C1 to C

Capacitor 1 000 pF C1 to C3 Chip capacit or 1 000 pF 100 MHz or higher

2

Bias Tee 1 000 pF 100 nH 100 MHz or higher

10 nH 1.0 GHz or higher

INDUCTOR FOR THE OUTPUT PIN

The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output

CC

transistor, connect an inductor between the V

pin (pin 6) and output pin (pin 4). Select large value inductance, as

listed above.

The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable.

CAPACITORS FOR THE V

Capacitors of 1 000 pF are recommendable as the bypass capacitor for the V

CC

, INPUT, AND OUTPUT PINS

CC

pin and the coupling capacitors

for the input and output pins.

The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.

The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.

To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2 πRfc).

6

Data Sheet P12653EJ2V1DS00

Illustration of the test circuit assembled on evaluation board

Top View

AMP-2

µµµµ

PC2709TB

Component List

C 1 000 pF

L 300 nH

Value

132

C1E

645

Mounting direction

IN OUT

C

L

V

CC

C

C

Notes

1.

30 × 30 × 0.4 mm double sided copper clad polyimide board.

2.

Back side: GND pattern

3.

Solder plated on pattern

4.

: Through holes

Data Sheet P12653EJ2V1DS00

7

TYPICAL CHARACTERISTICS (TA = +25°C)

µµµµ

PC2709TB

40
35
30
25
20
15
10

- Circuit Current - mA

CC

I

5

0

8

7

6

30

25

20

G

P

VCC = 5.0 V

NF

5

NF - Noise Figure - dB

4

15

- Insertion Power Gain - dB

P

G

10

0.1

CIRCUIT CURRENT vs.
SUPPLY VOLTAGE

123456

CC

- Supply Voltage - V

V

NOISE FIGURE AND INSERTION
POWER GAIN vs. FREQUENCY

VCC = 5.5 V

5.0 V

4.5 V

5.5 V

4.5 V

0.3 1.0 3.0
f - Frequency - GHz

CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE

40
35
30
25
20
15
10

- Circuit Current - mA

CC

I

5
0

–60

–40 –20 0 +20 +40 +60 +80 +100

A

- Operating Ambient Temperature - °C

T

INSERTION POWER GAIN vs.
FREQUENCY

30

25

20

15

- Insertion Power Gain - dB

P

G

10

0.1

0.3 1.0 3.0
f - Frequency - GHz

VCC = 5.0 V

V

CC

–40°C

TA = +25°C

+85°C

= 5.0 V

–10

–20

–30

ISL - Isolation - dB

–40

–50

8

0

0.1

ISOLATION vs. FREQUENCY

CC

V

0.3 1.0 3.0
f - Frequency - GHz

= 5.0 V

Data Sheet P12653EJ2V1DS00

INPUT RETURN LOSS, OUTPUT
RETURN LOSS vs. FREQUENCY

0

–10

–20

–30

- Input Return Loss - dB

- Output Return Loss - dB

in

out

–40

RL

RL

–50

0.1

0.3 1.0 3.0

RLinRL

f - Frequency - GHz

V

CC

= 5.0 V

out

µµµµ

PC2709TB

OUTPUT POWER vs.
INPUT POWER

+15

f = 1.0 GHz

+10

+5

0

–5

–10

- Output Power - dBm

O

P

–15
–20

–30–35 –25 –20 –15 –10 –5 0 +5 +10

in

P

OUTPUT POWER vs.
INPUT POWER

+15

f = 2.0 GHz

+10

+5

0

–5

5.5 V

CC

= 5.0 V

V

- Input Power - dBm

5.5 V

V

CC

4.5 V

= 5.0 V

4.5 V

OUTPUT POWER vs.
INPUT POWER

+15

VCC = 5.0 V
f = 1.0 GHz

+10

+5

0

–5

–10

- Output Power - dBm

O

P

–15
–20

–30–35 –25 –20 –15 –10 –5 0 +5 +10

in

P

OUTPUT POWER vs.
INPUT POWER

+15

VCC = 5.0 V

+10

+5

0

–5

+25°C

TA = –40°C

- Input Power - dBm

f = 0.5 GHz

f = 1.0 GHz

f = 2.0 GHz

+85°C

–10

- Output Power - dBm

O

P

–15
–20

–30–35 –25 –20 –15 –10 –5 0 +5 +10

in

- Input Power - dBm

P

SATURATED OUTPUT POWER vs.
FREQUENCY

20

in

= 0 dB

18
16

P

5.5 V

14
12

VCC = 5.0 V

10

8
6
4

- Saturated Output Power - dBm

2

O(sat)

0

P

0.1 3.0

4.5 V

0.3 1.0
f - Frequency - GHz

–10

- Output Power - dBm

O

P

–15
–20

–30–35 –25 –20 –15 –10 –5 0 +5 +10

in

- Input Power - dBm

P

THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE

–60

f1 = 1.000 GHz
f2 = 1.002 GHz

–50

–40

–30

VCC = 5.0 V

5.5 V

–20

4.5 V

- 3rd Order Intermodulation Distortion - dBc

–10

3

–10 +10

IM

–8 –6 –4 –2 0 +2 +4 +6 +8

O(each)

- Output Power of Each Tone - dBm

P

Data Sheet P12653EJ2V1DS00

9

S-Parameter (VCC = 5.0 V)

S11-FREQUENCY

3.0 G

0.1 G

1.0 G

µµµµ

PC2709TB

S22-FREQUENCY

3.0 G

2.0 G

0.1 G

1.0 G

10

Data Sheet P12653EJ2V1DS00

µµµµ

PC2709TB

Typical S-Parameter Values (TA = +25°C)

PC2709TB

µ

VCC = V

out

= 5.0 V, ICC = 26 mA

Frequency S11 S21 S12 S22 K

MHz MAG ANG MAG ANG MAG ANG MAG ANG

100.0000 .227 0.2 13.698 –4.5 .027 –1.0 .196 0.9 1.37

200.0000 .239 1.0 13.724 –9.6 .027 3.1 .207 2.2 1.36

300.0000 .245 2.9 13.830 –14.5 .026 4.7 .212 4.1 1.38

400.0000 .244 2.5 13.998 –19.9 .027 7.8 .223 3.4 1.32

500.0000 .243 1.5 14.109 –25.0 .026 9.8 .234 2.1 1.33

600.0000 .247 –1.5 14.246 –30.4 .027 11.9 .252 –0.4 1.26

700.0000 .265 –3.2 14.538 –35.5 .028 13.6 .270 –2.3 1.20

800.0000 .284 –3.6 14.703 –41.3 .028 14.9 .287 –4.6 1.15

900.0000 .301 –3.3 15.051 –47.0 .028 17.2 .298 –7.4 1.10

1000.0000 .305 –2.4 15.331 –53.5 .029 18.8 .309 –11.9 1.05

1100.0000 .299 –3.2 15.605 –60.0 .029 20.9 .322 –17.1 1.04

1200.0000 .300 –6.3 15.773 –66.7 .029 22.5 .336 –21.5 1.01

1300.0000 .314 –10.3 16.152 –74.0 .030 23.8 .353 –24.8 0.95

1400.0000 .328 –14.4 16.282 –81.0 .030 26.1 .353 –28.8 0.93

1500.0000 .354 –17.3 16.337 –89.3 .032 25.6 .368 –35.5 0.86

1600.0000 .359 –19.5 16.370 –96.5 .031 26.8 .370 –41.8 0.86

1700.0000 .373 –22.1 16.256 –104.5 .033 28.0 .382 –46.9 0.81

1800.0000 .371 –26.8 15.977 –112.7 .032 29.3 .381 –52.8 0.83

1900.0000 .379 –31.1 15.529 –120.5 .033 31.3 .378 –57.8 0.83

2000.0000 .386 –36.0 15.307 –128.1 .034 31.0 .373 –64.1 0.82

2100.0000 .387 –39.5 14.745 –135.9 .033 32.2 .366 –70.8 0.85

2200.0000 .374 –43.8 14.212 –143.7 .033 30.5 .363 –78.1 0.90

2300.0000 .360 –48.7 13.633 –151.3 .033 33.9 .353 –83.0 0.94

2400.0000 .339 –55.4 12.846 –158.7 .032 35.5 .331 –90.0 1.06

2500.0000 .338 –62.0 11.990 –165.5 .033 38.0 .318 –95.6 1.11

2600.0000 .334 –66.0 11.265 –172.1 .033 39.1 .304 –102.5 1.20

2700.0000 .330 –69.0 10.560 –177.8 .033 40.8 .295 –108.3 1.25

2800.0000 .311 –69.9 9.942 176.2 .033 43.5 .282 –113.7 1.36

2900.0000 .291 –72.5 9.432 171.3 .035 44.9 .267 –118.6 1.40

3000.0000 .258 –76.5 8.818 166.5 .035 47.4 .246 –125.1 1.55

3100.0000 .240 –80.6 8.353 161.9 .035 53.4 .225 –131.2 1.64

Data Sheet P12653EJ2V1DS00

11

PACKAGE DIMENSIONS

6 pin super minimold (unit: mm)

µµµµ

PC2709TB

2.1 ±0.1

1.25 ±0.1

+0.1

0.2

–0

0.65 0.65

1.3

2.0 ±0.2

0.1 MIN.

0.7

0.9 ±0.1

0.15

+0.1
–0

0 to 0.1

12

Data Sheet P12653EJ2V1DS00

µµµµ

PC2709TB

NOTES ON CORRECT USE

(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).

All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to the VCC pin.
(4) The inductor must be attached between VCC and output pins. The inductance value should be determined in

accordance with desired frequency.
(5) The DC cut capacitor must be attached to input pin.

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered under the following recommended conditions. For soldering methods and condi-

tions other than those recommended below, contact your NEC sales representative.

Soldering Method Soldering Condit i ons Recommended Condition Symbol

Infrared Reflow P ackage peak temperature: 235°C or below

Time: 30 seconds or less (at 210°C)
Count: 3, Exposure limi t: None

VPS Package peak temperature: 215° C or bel ow

Time: 40 seconds or less (at 200°C)
Count: 3, Exposure limi t: None

Wave Soldering Soldering bath temperature: 260°C or below

Time: 10 seconds or less
Count: 1, Exposure limi t: None

Partial Heating Pin temperature: 300°C

Time: 3 seconds or less (per side of device)
Exposure limit: None

After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.

Note

Note

Note

Note

Note

IR35-00-3

VP15-00-3

WS60-00-1

–

Caution Do not use different soldering methods together (except for partial heating).

For details of recommended soldering conditions for surface mounting, refer to information document

SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E)

.

Data Sheet P12653EJ2V1DS00

13

[MEMO]

µµµµ

PC2709TB

14

Data Sheet P12653EJ2V1DS00

[MEMO]

µµµµ

PC2709TB

Data Sheet P12653EJ2V1DS00

15

µµµµ

PC2709TB

ATTENTION

OBSERVE PRECAUTIONS

FOR HANDLING

ELECTROSTATIC

SENSITIVE

DEVICES

NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.

M7 98. 8