Datasheet UMA1016AT, UMA1016xT, UMA1016BT Datasheet (Philips)

Page 1
DATA SH EET
Product specification Supersedes data of June 1992 File under Integrated Circuits, IC03
1995 Jul 12
INTEGRATED CIRCUITS
UMA1016xT
Page 2
1995 Jul 12 2
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
FEATURES
RF input frequencies to 1 GHz
Fully programmable RF divider
3-wire serial bus interface
On-chip 3 to 16 MHz crystal oscillator
Mask programmable ÷2to÷31 reference divider ratio
Up to 1 MHz channel spacing
Crystal frequency buffered output
Dual register architecture for fast Tx/Rx switching in
TDD single synthesizer systems
Phase detector compensated for supply and temperature variations
Power-down mode.
APPLICATIONS
900 MHz cordless telephones
Portable battery-powered radio equipment.
GENERAL DESCRIPTION
The UMA1016xT is a low power synthesizer for radio communications. Manufactured in bipolar technology, it is designed for a 70 to 1000 kHz channel spacing in the 500 to 1000 MHz band. The channel is programmed via a 3-wire serial bus. The internal dual register architecture allows a single synthesizer to be used in TDD systems. Fast switching between transmit and receive frequencies is achieved without the need for bus overhead. It also incorporates a sensitive, low power RF divider and a dead-zone-eliminated 3-state phase comparator. A power-down mode enables the circuit to be idled.
QUICK REFERENCE DATA
ORDERING INFORMATION
Notes
1. UMA1016AT has a Reference Division Factor of 27.
2. UMA1016AT has a Reference Division Factor of 16.
3. UMA1016xT is a customized version.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
V
CC
supply voltage 4.5 5.5 V
V
DD
supply voltage 4.5 5.5 V
I
CC
+ I
DD
supply current 12 mA
I
DD(pd)
digital supply current in power-down 0.8 mA
f
ref
phase comparator frequency 70 250 1000 kHz
RF
I
RF input frequency T
amb
= 10 to +70°C 500 800 MHz
T
amb
= 0 to +70°C 500 1000 MHz
T
amb
operating ambient temperature 10 +70 °C
TYPE
NUMBER
PACKAGE
NAME PIN POSITION VERSION
UMA1016AT
(1)
SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
UMA1016BT
(2)
SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
UMA1016xT
(3)
SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
Page 3
1995 Jul 12 3
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MGA193 - 1
REGISTER
Tx
LATCH
RF
DIVIDER
Rx
LATCH
OSCILLATOR
BIAS
GENERATORS
PHASE
DETECTOR
INTERFACE
Ck DQ
AMPLIFIER
BUFFER
DIVIDER
2 – 31
.
.
REGISTER
Tx
LATCH
MAIN
DIVIDER
Rx
LATCH
12
3
4
5
6
7
16
15
14
12
11
10
9
CP
V
CC
AGND
Tx/Rx
EN
CK
DATA
RO1 RO2
V
DD
REFCK
HPDN
DGND
RFI
UMA1016XT
Page 4
1995 Jul 12 4
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
PINNING
SYMBOL PIN DESCRIPTION
RO1 1 crystal oscillator input or TCXO
input RO2 2 oscillator output to crystal circuit V
DD
3 5 V supply to digital section
REFCK 4 reference crystal frequency
buffered output HPDN 5 Hardware Power-Down Not;
IC operates when pin is HIGH DGND 6 digital ground RFI 7 1 GHz RF signal input i.c. 8 internally connected DATA 9 programming bus data input CK 10 programming bus clock input EN 11 programming bus enable input
(active LOW) TX/
RX 12 transmit (HIGH)/receive (LOW)
mode select input i.c. 13 internally connected AGND 14 analog ground V
CC
15 5 V supply to charge pump
circuit CP 16 charge pump output
Fig.2 Pin configuration.
handbook, halfpage
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10
9
CP V
CC
AGND i.c. TX/RX
EN CK DATA
RO1
RO2 V
DD
REFCK
HPDN
DGND
RFI
i.c.
UMA1016XT
MGA192 - 1
FUNCTIONAL DESCRIPTION General
The UMA1016xT is a low power synthesizer for radio communications in the range 500 to 1000 MHz. It includes an oscillator circuit, reference divider, RF divider, 3-state phase and frequency comparator, charge pump and main control circuit for the transfer of serial data into two internal registers.
V
DD
supplies power to the digital circuits while VCC powers the charge pump. VDD and VCC are nominally 5 V but will operate in the range 4.5 V to 5.5 V.
Reduced noise coupling is facilitated by separate digital and analog ground pins which must always be externally connected to the same DC potential to prevent the flow of large currents across the die.
The synthesizer is placed in idle mode during power-down but the oscillator and buffer remain operative and may be used as a clock for system timing.
Main divider
The main divider is a fully programmable pulse-swallow type. Following a sensitive (50 mV, 13 dBm) input amplifier, the RF signal is applied to a 13-bit divider (MD13 to MD1). The division ratio is provided via the serial bus to two 13-bit latches, corresponding to transmit and receive frequencies. The serial programming register is written to under processor control, independently of divider operation. This removes difficulty if using a low data bus transmission speed. The new ratio is transferred to the appropriate latch when the programming enable signal (
EN) returns HIGH.
The last register bit (PB0) is used to determine whether the new value is loaded into the transmit (PB0 = 1) or receive (PB0 = 0) frequency latch. To avoid spurious phase changes, the divider incorporates the new ratio only at the end of the on-going reference period. The minimum division ratio is 512. One reference cycle is required to update a new ratio. Internal power-on occurs rapidly.
Page 5
1995 Jul 12 5
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
Oscillator
External capacitive feedback is applied to the common collector Colpitts oscillator which has high voltage supply rejection and negligible temperature drift. It is designed to function as an input buffer without the need for external components when a TCXO or other clock is used. A separate output buffer, which remains active during power-down (HPDN taken LOW), provides a TTL compatible signal to drive external logic circuits (REFCK).
Reference divider
The reference divider has a fixed divider ratio set by metal masking between 2 and 31. For example, a 4 MHz crystal connected to the oscillator and a ÷16 ratio allows a channel spacing of 250 kHz. Other frequencies and ratios are possible.
Phase comparator
The phase comparator combines a phase and frequency detector and charge pump (see Fig.3). The charge pump current is internally fixed and determined for fast switching. It is compensated against power supply and temperature variation.
The detector is assembled from dual D-type flip-flops which, together with feedback, remove the ‘dead’ zone. Upon the detection of a phase error, either UP or DO go HIGH. This gates the appropriate current generator to source or sink 1.75 mA at the output pin. When no phase error is detected, CP becomes 3-state. The tuning voltage of the VCO is established from the sum of the current pulses into the loop filter.
A simple passive loop filter may be used to offer high performance without requiring an operational-amp. The phase comparator function is summarized in Table 2.
Main control interface
The programming control interface permits access to two internal latches, denoted Tx and Rx. The serial input bits on DATA, entered MSB first, are converted to a parallel word and stored in the appropriate latch under the control of the last entered register bit (PB0). When this is set
HIGH, data serially fed to the register is loaded into the transmit (Tx) latch; when PB0 is LOW, the data is transferred to the receive latch (Rx).
The data sent to the synthesizer is loaded in bursts framed by the signal
EN. Programming clock edges, together with their appropriate data bits, are ignored until EN becomes active (LOW). The internal latches are updated with the latest programming data whenEN returns inactive (HIGH). Only the last 15 bits serially clocked into the device are retained within the programming register. One extra shift register bit (PB7) can be internally added via metal masking to allow direct software compatibility with a 7-bit swallow counter and a 64/65 dual-modulus prescaler. No check is made on the number of clock pulses received during the time that programming is enabled. EN going HIGH while CLOCK is still LOW generates an active clock edge causing a shift of the data bits.
Data programmed into the register is lost during power-down (HPDN taken LOW). The maximum serial bus clock speed is specified as 5 MHz. Minimum speed is limited by the clock edge rise and fall times to ensure that no data transparency condition can exist.
Independent of any serial programming activity, the RF divider chain uses the data previously stored within the selected latch to determine the synthesized channel frequency. The Tx/Rx signal controls which latch is read to preload the counter bits at each division cycle. When new data is updated into the device, it is used during the cycle following latch selection by the Tx/Rx control line.
If the Tx/Rx line is tied LOW, only data loaded into the Rx latch is used. In this event the serial data stream clocked into the synthesizer must terminate with an ‘0’. The logic diagram for the first bits of the programming interface is shown in Fig.3. The other bits are processed in a similar manner by a further 9 stages of the shift register-latches-multiplexer.
The signals supplied to the circuit are described by the timing diagram. The table of values has been specified for maximum bus speed. Under slow clocking conditions, rise and fall times must not be excessively slow.
Page 6
1995 Jul 12 6
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
Table 1 Main divider division ratio
Table 2 Operation of phase comparator
Table 3 Register and latch bit allocations
Note
1. pb7; see Section “Main control interface”.
MAIN COUNTER
MD1 MD2 ../.. MD7 MD8 ../.. MD12 MD13
LSB MSB
SYMBOL F
ref
< F
var
F
ref
> F
var
F
ref=Fvar
UP010 DO100 I
pcd
1.75 mA +1.75 mA 5nA
FIRST REGISTER AND LATCH BIT ALLOCATIONS LAST IN
pb14 pb13 pb12 pb11 pb10 pb9 pb8 pb7
(1)
pb6 pb5 pb4 pb3 pb2 pb1 pb0
md13 md12 md11 md10 md9 md8 md7 X md6 md5 md4 md3 md2 md1 address
Fig.3 Phase comparator block diagram.
handbook, full pagewidth
MGA194
var
ref
on/off
V
CC
pump output
1.75 mA
on/off
1.75 mA
PHASE AND
FREQUENCY
DETECTOR
UP
DO
AGND
Page 7
1995 Jul 12 7
Philips Semiconductors Product specification
Frequency synthesizer for
radio communication equipment
UMA1016xT
handbook, full pagewidth
MGA195
MUX
OUT
SEL
R
B
FLIPFLOP
D
Q
CK
FLIPFLOP
D
Q
CK
FLIPFLOP
D
Q
CK
FLIPFLOP
D
Q
CK
FLIPFLOP
D
Q
CK
DQ
EN
LATCH
DQ
EN
LATCH
DQ
EN
LATCH
DQ
EN
LATCH
FLIPFLOP
DQ
CK
DQ
EN
LATCH
DQ
EN
LATCH
DQ
EN
LATCH
DQ
EN
LATCH
MUX
OUT
SEL
R
B
MUX
OUT
SEL
R
B
MUX
OUT
SEL
R
B
DQ
EN
LATCH
DATA
CK
EN
End_Count_CK
Not_End_Count
Tx / Rx
Bit
0
Bit
1
Bit
2
Bit
3
main divider coefficient
programming shift register
transmit frequency latch
receive frequency latch
coefficient select multiplexer
Rx Ld
Tx Ld
Select
DATA out
Shift CK
PB0
Fig.4 Simplified interface logic diagram.
Page 8
1995 Jul 12 8
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
Fig.5 Logic interface signals.
handbook, full pagewidth
MGA196
next
ladrslsb
t
start
t
wid
t
new
t
end
t
r
t
f
t
cyc
t
h1
t
su
CK
DATA
EN
msb
Page 9
1995 Jul 12 9
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
HANDLING
Inputs and outputs are protected against electrostatic discharges in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling integrated circuits.
TIMING CHARACTERISTICS
V
DD
and VCC=5V; T
amb
= 10 to +70 °C; unless otherwise specified; typical values measured at VCC and VDD=5V;
T
amb
=25°C; note 1.
Note
1. Minimum and maximum values are for maximum clock speed.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DD
digital supply voltage range 0.2 7V
V
CC
analog supply voltage range 0.2 7V
V
i
input voltage range to ground 0 V
DD
V
T
stg
storage temperature range 55 125 °C
T
amb
operating ambient temperature 10 70 °C
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
Serial programming clock (pin 10)
f
ck
clock frequency 0.01 4 5 MHz
t
r
rise time 550ns
t
f
fall time 550ns
T
cy
clock period 200 −−ns
Enable programming (pin 11)
t
start
delay to rising clock edge 30 −−ns
t
end
delay from last clock edge 0 −−ns
t
width
minimum inactive pulse width 200 −−ns
t
new
delay from EN inactive to new data 300 −−ns
Register serial input data (pin 9)
t
su
input data to CK set-up time 10 −−ns
t
h1
input data to CK hold time 10 −−ns
Page 10
1995 Jul 12 10
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
CHARACTERISTICS
V
DD
and VCC=5V; T
amb
=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Power supply
V
DD
digital voltage supply VCC=V
DD
4.5 5 5.5 V
V
CC
analog voltage supply 4.5 5 5.5 V
I
DD
digital supply current VDD= 5.5 V; REFCK off 10.1 10.8 mA
I
CC
analog supply current VCC= 5.5 V; pump off 1.9 2.1 mA
I
DD(pd)
digital supply current in power-down mode 0.8 1.5 mA
RF divider input (RFI)
f
vco
RF frequency range T
amb
= 10 to +70°C 500 800 MHz
T
amb
= 0 to +70°C 500 1000 MHz
V
rf(rms)
input signal voltage level (RMS value) 50 200 mV
R
iRF
input resistance RF=1GHz 350 −Ω
C
iRF
input capacitance indicative; not tested 1.5 pF
N main divider division ratio 512 8191
Oscillator and reference divider (RO1, RO2)
f
ref
oscillator frequency range R
ref(ck)
used 3 16 MHz
V
osc(rms)
sinusoidal input level at pin 1 (RMS value) 0.1 0.5 V
C
o1
parasitic capacitance at pin 1 indicative; not tested 5 pF
Z
o2
output impedance at pin 2 indicative; not tested 2 k
C
o2
output capacitance indicative; not tested 5 pF
Phase comparator and charge pump output (CP)
f
cp
phase detector frequency range 70 250 1000 kHz
I
cp(source)
charge pump source current VCC= 4.5 to 5.5 V 2.2 1.75 1.3 mA
I
cp(sink)
charge pump sink current VCC= 4.5 to 5.5 V 1.3 1.75 2.2 mA
I
cp(leak)
charge pump off leakage current 10 +10 nA
V
cp
charge pump voltage compliance range Icp within specified
range
0.5 VCC− 0.5 V
Page 11
1995 Jul 12 11
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
Interface logic input signal levels (HPDN, EN, DATA, CK, Tx/Rx)
V
IH
HIGH level input voltage all inputs 3 VDD+ 0.3 V
V
IL(PD)
LOW level input voltage HPDN 0.3 0.6 V
V
IL
LOW level input voltage except HPDN 0.3 1V
I
bias
input bias current logic 1 −−5 µA
logic 0 5 −− µA
C
i
input capacitance indicative; not tested 3 pF
Oscillator buffered logic output signal (REFCK)
V
oh
HIGH level driven output voltage VDD= 5 V 3.5 4.0 VDD− 0.5 V
V
ol
LOW level driven output voltage 0 0.4 V
I
o(sink)
output sink current VCL= 0.5 V 0.4 −− mA
t
r
reference clock output rise time CI=25pF 50 ns
t
f
reference clock output fall time CL=25pF 50 ns
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Page 12
1995 Jul 12 12
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
APPLICATION INFORMATION
In a typical single-synthesizer application, the circuit is connected as shown in Fig.6. Both analog and digital supplies are decoupled to ground with HF and LF filter capacitors. Correct oscillator operation requires capacitors both to ground and to provide feedback across the amplifier. Five signals are shown fed from a microcontroller to provide serial programming, control TDD frequency selection and initiate the power-down mode. Other system logic may also be clocked by a crystal frequency output from the synthesizer.
A passive 2nd-order loop filter giving a 3rd-order system response is shown in Fig.6. Indicated values are intended for rapid frequency switching (500 µs), 200 kHz channel spacing (reference ÷27) and breakthrough levels below
60 dB. The VCO output shows a power splitter supplying both the synthesizer RF input and drive buffer for other system components (RF amplifier in transmit mode, input mixer in receive mode). The minimizing of loop filter node leakage currents requires careful board layout.
Fig.6 Application diagram.
handbook, full pagewidth
MGA197 - 2
UMA1016XT
1 2 3 4 5 6 7 8
16
15 14 13 12 11 10
9
P4 P3 P2 P1
P0
10 nF
47 µF
33
68 pF 33 pF
220 pF
5.4 MHz
REFCK
10 nF
V
P
47 µF
V
P
1 nF
VCO
12
12
RFout
100
82
330 pF
4.7 nF
18 k
Page 13
1995 Jul 12 13
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
PACKAGE OUTLINES
X
w M
θ
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v M
A
(A )
3
A
8
9
1
16
y
pin 1 index
UNIT
A
max.
A1A2A
3
b
p
cD
(1)E(1) (1)
eHELLpQZywv θ
REFERENCES
OUTLINE VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
1.27
6.2
5.8
0.7
0.6
0.7
0.3
8 0
o o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
1.0
0.4
SOT109-1
95-01-23 97-05-22
076E07S MS-012AC
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.39
0.38
0.16
0.15
0.050
1.05
0.041
0.244
0.228
0.028
0.020
0.028
0.012
0.01
0.25
0.01 0.004
0.039
0.016
0 2.5 5 mm
scale
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
Page 14
1995 Jul 12 14
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
SOLDERING SO or SSOP Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these cases reflow soldering is often used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our
“IC Package Databook”
(order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SO and SSOP packages.
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C.
Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.
Wave soldering
SO Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used.
The longitudinal axis of the package footprint must be parallel to the solder flow.
The package footprint must incorporate solder thieves at the downstream end.
SSOP Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following conditions must be observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering technique should be used.
The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate solder thieves at the downstream end.
Even with these conditions, only consider wave soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1).
METHOD (SO OR SSOP) During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds at 270 to 320 °C.
Page 15
1995 Jul 12 15
Philips Semiconductors Product specification
Frequency synthesizer for radio communication equipment
UMA1016xT
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Page 16
Philips Semiconductors – a worldwide company
Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)
BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. (02)805 4455, Fax. (02)805 4466
Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213,
Tel. (01)60 101-1236, Fax. (01)60 101-1211
Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,
Tel. (31)40 783 749, Fax. (31)40 788 399
Brazil: Rua do Rocio 220 - 5
th
floor, Suite 51, CEP: 04552-903-SÃO PAULO-SP, Brazil. P.O. Box 7383 (01064-970), Tel. (011)821-2333, Fax. (011)829-1849
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS:
Tel. (800) 234-7381, Fax. (708) 296-8556
Chile: Av. Santa Maria 0760, SANTIAGO,
Tel. (02)773 816, Fax. (02)777 6730
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (852)2319 7888, Fax. (852)2319 7700
Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17,
77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549
Denmark: Prags Boulevard 80, PB 1919, DK-2300
COPENHAGEN S, Tel. (032)88 2636, Fax. (031)57 1949
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. (358)0-615 800, Fax. (358)0-61580 920
France: 4 Rue du Port-aux-Vins, BP317,
92156 SURESNES Cedex, Tel. (01)4099 6161, Fax. (01)4099 6427
Germany: P.O. Box 10 63 23, 20043 HAMBURG,
Tel. (040)3296-0, Fax. (040)3296 213.
Greece: No. 15, 25th March Street, GR 17778 TAVROS,
Tel. (01)4894 339/4894 911, Fax. (01)4814 240
India: Philips INDIA Ltd, Shivsagar Estate, A Block,
Dr. Annie Besant Rd. Worli, Bombay 400 018 Tel. (022)4938 541, Fax. (022)4938 722
Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,
P.O. Box 4252, JAKARTA 12950, Tel. (021)5201 122, Fax. (021)5205 189
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. (01)7640 000, Fax. (01)7640 200
Italy: PHILIPS SEMICONDUCTORS S.r.l.,
Piazza IV Novembre 3, 20124 MILANO, Tel. (0039)2 6752 2531, Fax. (0039)2 6752 2557
Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. (03)3740 5130, Fax. (03)3740 5077
Korea: Philips House, 260-199 Itaewon-dong,
Yongsan-ku, SEOUL, Tel. (02)709-1412, Fax. (02)709-1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,
SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905,
Tel. 9-5(800)234-7381, Fax. (708)296-8556
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. (040)783749, Fax. (040)788399 (From 10-10-1995: Tel. (040)2783749, Fax. (040)2788399)
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. (09)849-4160, Fax. (09)849-7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. (022)74 8000, Fax. (022)74 8341
Pakistan: Philips Electrical Industries of Pakistan Ltd.,
Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton, KARACHI 75600, Tel. (021)587 4641-49, Fax. (021)577035/5874546
Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474
Portugal: PHILIPS PORTUGUESA, S.A.,
Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores, Apartado 300, 2795 LINDA-A-VELHA, Tel. (01)4163160/4163333, Fax. (01)4163174/4163366
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. (65)350 2000, Fax. (65)251 6500
South Africa: S.A. PHILIPS Pty Ltd.,
195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430, Johannesburg 2000, Tel. (011)470-5911, Fax. (011)470-5494.
Spain: Balmes 22, 08007 BARCELONA,
Tel. (03)301 6312, Fax. (03)301 42 43
Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,
Tel. (0)8-632 2000, Fax. (0)8-632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. (01)488 2211, Fax. (01)481 77 30
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West
Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978, TAIPEI 100, Tel. (02)388 7666, Fax. (02)382 4382
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, Bangkok 10260, THAILAND, Tel. (662)398-0141, Fax. (662)398-3319
Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. (0212)279 27 70, Fax. (0212)282 67 07
United Kingdom: Philips Semiconductors LTD.,
276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. (0181)730-5000, Fax. (0181)754-8421
United States:811 East Arques Avenue, SUNNYVALE,
CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556
Uruguay: Coronel Mora 433, MONTEVIDEO,
Tel. (02)70-4044, Fax. (02)92 0601
Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors,
International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 (from 10-10-1995: +31-40-2724825)
SCD41 © Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
413061/1500/03/pp16 Date of release: 1995 Jul 12 Document order number: 9397 750 00206
Loading...