Datasheet TK2Q60D Specification

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Unit: mm

2.3

1.1 ±

0.2

0.9

0.6 ± 0.15

5.2 ± 0.2

2.3

0.6 MAX.

1.5 ± 0.2

6.5 ± 0.2

1 2 3

0.6 MAX.

5.5 ± 0.2

2.3 ± 0.2

0.6 ± 0.15

5.7

1.6

4.1 ± 0.2

0.8 MAX.

1.1 MAX.

1. GATE

2. DRAIN（HEAT SINK）

3. SOURCE

Weight: 0.36 g (typ.)

1 3 2

Start of commercial production

TK2Q60D

Switching Regulator Applications

• Low drain-source ON-resistance: R

DS (ON)

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement mode: V

= 10 μA (max) (VDS = 600 V)

DSS

= 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V Gate-source voltage V

Drain current

Drain power dissipation (Tc = 25°C) Single pulse avalanche energy

(Note 2) Avalanche current IAR 2 A Repetitive avalanche energy (Note 3) EAR 6.0 mJ Channel temperature Tch 150 °C Storage temperature range T

DC (Note 1) I Pulse (Note 1) I

(Ta = 25°C)

= 3.2 Ω(typ.)

| = 1.0 S (typ.)

DSS GSS

stg

−55 to 150 °C

600 V ±30 V

2 8

60 W

101 mJ

JEDEC ― JEITA ― TOSHIBA 2-7J2B

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and indiv idua l re lia bil ity data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case R Thermal resistance, channel to ambient R

Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 44.1 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensit iv e device . Handle with care.

2.08 °C/W

th (ch-c)

125 °C/W

th (ch-a)

2009-03

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TK2Q60D

K2Q60D

Lot No.

Note 4 Part No.

(or abbreviation code)

Note

Please contact your TOS environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 20 of the Council of hazardous substances in el ectrical and electronic equipment

200 Ω

0 V

10 V

200 V

ID = 1 A

OUT

50 Ω

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I Drain cut-off current I Drain-source breakdown voltage V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.4 ― 4.4 V Drain-source ON resistance R Forward transfer admittance |Yfs| VDS = 10 V, ID =1 A 0.3 1.0 ― S Input capacitance C

Output capacitance C

Rise time t

Turn-on time ton ― 35 ―

Switching time

Fall time tf ― 7 ―

Turn-off time t

Total gate charge Qg Gate-source charge Qgs ― Gate-drain charge Qgd ―

(Ta = 25°C)

(BR) DSS

DS (ON)

VGS = ±30 V, VDS = 0 V ― ― ±1 μA

GSS

VDS = 600 V, VGS = 0 V ― ― 10 μA

DSS

ID = 10 mA, VGS = 0 V 600 ― ― V

VGS = 10 V, ID =1 A ― 3.2 4.3 Ω

iss

― 1.5 ―

rss

―

oss

― 55 ―

off

= 25 V, VGS = 0 V, f = 1 MHz

Duty ≤ 1%, t

≈ 400 V, VGS = 10 V, ID = 2 A

= 10 μs

≈

― 280 ―

30 ―

― 15 ―

―

Source-Drain Ratings and Characteristics

(Ta = 25°C)

pF Reverse transfer capacitance C

Characteristics Symbol Test Condit i on Min Typ. Max Unit

Continuous drain reverse current (Note 1)

Pulse drain reverse current (Note 1) I Forward voltage (diode) V Reverse recovery time trr Reverse recovery charge Qrr ― 2.2 ― μC

― ― ― 2 A

― ― ― 8 A

DRP

IDR = 2 A, VGS = 0 V ― ― −1.7 V

DSF

= 2 A, VGS = 0 V,

/dt = 100 A/μs

― 550 ― ns

Marking

4 : A line under a Lot No. identifies the indication of product Labels

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

HIBA sales representative for details as to

11/65/EU of the European Parliament and

8 June 2011 on the restriction of the use of certain

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TK2Q60D

Tc = −55°C

100

8.5

7.5

VGS = 6 V

6.5

8 7 7.5

7.3

VGS = 5.5 V

6.5

0.5

100

Tc = −55°C

Drain current I

Drain−source voltage VDS (V)

Drain current I

Drain−source voltage VDS (V)

Common source

Drain current I

Gate−source voltage VGS (V)

source voltage V

Gate−source voltage VGS (V)

Forward transfer admittance

Drain current ID (A)

DS (ON)

Drain−source ON-resistance

DS (ON)

Drain current ID (A)

Pulse test

VGS = 10 V

Common source Tc = 25°C

1.6

ID – VDS

3.2

Tc = 25°C Pulse test

ID – VDS

(A)

1.2

0.8

0.4

3.2

(A)

2.4

1.6

Common source VDS = 20 V Pulse test

(A)

2.4

1.6

0.8

2 0

4 6 8

ID – VGS

(V)

10 0

20 30 40

VDS – V

Common source Tc = 25°C Pulse test

ID = 2 A

0.8

0 10

6 8

|Yfs| − ID

Common source VDS = 10 V Pulse test

| (S)

0.1

0.1 10

Drain−

(Ω)

100

Common source Tc = 25°C Pulse test

0.1

4 0

12 16

− ID

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TK2Q60D

200 V

VDS

= 100 V

VGS

400 V

0 20

8 4

12 16

3 2

oss

iss

rss

VGS = 0 V

ID = 0.5 A

Drain power dissipation P

Gate threshold voltage V

Drain−source voltage VDS (V)

Drain reverse current I

Drain−source voltage VDS (V)

Capacitance C (pF)

Case temperature Tc (°C)

source voltage V

Gate−source voltage V

(V)

Total gate charge Qg (nC)

Dynamic input/output

DS (ON)

Drain−source ON-resistance

DS (ON)

Case temperature Tc (°C)

Common source

Pulse test

40 20

Common source VGS = 10 V Pulse test

– Tc

Common source Tc = 25°C Pulse test

(A)

(Ω)

IDR − VDS

−80 −40 0 80 120

C – VDS

1000

100

Common source VGS = 0 V f = 1 MHz Tc = 25°C

1 0.1

160

100

0.1

(V)

−80

-0.3

0 -0.9

Common source VDS = 10 V ID = 1 mA Pulse test

−40

-0.6

-1.2

Vth − Tc

0 80 120

40 160

-1.5

(W)

PD − Tc

500

400

(V)

characteristics

ID = 2 A Tc = 25°C

300

200

100

Drain−

120

160

2 0 10 4

6 8

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TK2Q60D

DSS

max

1 ms *

100

1 10

Duty=0.5

0.2

0.1

0.05

0.02

0.01

PDM

Duty = t/T R

th (ch-c)

= 2.08 °C/W

−15 V

15 V

TEST CIRCUIT

WAVEFORM

IAR

VDSS

VDD

VDS

R V



 





 



−

⋅⋅⋅=

VDSS

Puls e width tw (s)

Normalized transient thermal impedance

th (t)

th (ch-c)

Single pulse

Avalanche energy E

Channel temperature (initial) Tch (°C)

Drain current I

Drain−source voltage VDS (V)

DC operation

Tc = 25°C

ID max (Continuous)

ID max (Pulse) *

/R r

0.1

0.01 10μ

100μ

rth – tw

10m

100m

100

(A)

0.1

* Single nonrepetitive

0.01

Curves must be derated linearly with increase in temperature.

0.001 1

Safe operating area

pulse Tc = 25°C

100

160

EAS – Tch

120

(mJ)

μs

1000

100

125

150

= 25 Ω

= 90 V, L = 44.1 mH

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TK2Q60D

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omissi on.

• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specific at i ons, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any informati on contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.

• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Uni ntended Us e i ncludes, without

limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative.

• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or c opy Product, whether in whole or in part.

• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDI RECT, CONSEQUENTIAL, SPECI AL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNI TI E S, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

• Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILIT Y FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

2015-11-28