Page 1
TK12
TK12
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4252-4.0 DS4252-5.0 July 2001
FEATURES
■ High Surge Capability
APPLICATIONS
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
TK12 20 M or K
TK12 18 M or K
TK12 16 M or K
TK12 14 M or K
Lower voltage grades available.
2000
1800
1600
1400
Conditions
Tvj = 0˚ to 125˚C,
I
= I
RRM
, V
& V
& V
RRM tp
= 100mA,
= 10ms,
=
RSM
+ 100V
RRM
DRM
V
DRM
V
DSM
V
DRM
Respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Add K to type number for 1/2" 20 UNF thread, e.g. TK12 18K.
or
Add M to type number for M12 thread, e.g. TK12 14M.
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt* 200V/
dI/dt 500A/
*Higher dV/dt selections available
2000V
75A
1400A
µs
µs
Outline type code: TO94.
See Package Details for further information.
Fig. 1 Package outline
www.dynexsemi.com
1/8
Page 2
TK12
CURRENT RATINGS
T
= 60˚C unless stated otherwise.
case
Symbol Parameter Conditions
I
T(AV)
I
T(RMS)
I
T
T
= 80˚C unless stated otherwise.
case
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 104 A
Symbol Parameter Conditions
I
T(AV)
I
T(RMS)
I
Mean on-state current
RMS value
T
Continuous (direct) on-state current
Half wave resistive load 75 A
SURGE RATINGS
Symbol
I
TSM
2
I
tI
Parameter
Surge (non-repetitive) on-state current
2
t for fusing
10ms half sine; T
Conditions
VR = 50% V
RRM
UnitsMax.
- 163 A
- 139 A
UnitsMax.
- 120 A
- 100 A
Max. Units
= 125oC
case
- 1/4 sine
1.12 kA
6.2 x 10
3
A2s
I
TSM
I2t
Surge (non-repetitive) on-state current
2
I
t for fusing 9.8 x 10
THERMAL AND MECHANICAL DATA
Symbol
2/8
th(j-c)
th(c-h)
T
T
stg
-
Thermal resistance - case to heatsinkR
vj
Virtual junction temperature
Storage temperature range
Mounting torque
Parameter
10ms half sine; T
= 125oC
case
1.4 kA
VR = 0
Conditions Min. Max. Units
dc
Mounting torque 15.0Nm
- 0.24
0.08-
with mounting compound
On-state (conducting) - 125
Reverse (blocking)
125
-
–40 150
12.0 15.0 Nm
www.dynexsemi.com
3
A2s
o
C/WThermal resistance - junction to caseR
o
C/W
o
C
o
C
o
C
Page 3
DYNAMIC CHARACTERISTICS
TK12
ParameterSymbol Conditions
V
TM
I
RRM/IDRM
Maximum on-state voltage At 150A peak, T
Peak reverse and off-state current At V
RRM/VDRM
dV/dt Maximum linear rate of rise of off-state voltage To 60% V
Gate source 20V, 20Ω
dI/dt
V
T(TO)
r
t
I
I
Rate of rise of on-state current
Threshold voltage At Tvj = 125oC
T
gd
L
H
On-state slope resistance At Tvj = 125oC
Delay time
Latching current Tj = 25oC, VD = 12V
Holding current Tj = 25oC, VD = 12V, ITM = 1A
tr ≤ 0.5µs, Tj = 125˚C
= 300V, IG = 1A, IT = 50A, dI/dt = 50A/µs,
V
D
dIG/dt = 1A/µs, Tj = 25oC
GATE TRIGGER CHARACTERISTICS AND RATINGS
= 25oC
case
, T
= 125oC
case
= 125oC, Gate open circuit
DRM Tj
Repetitive 50Hz
Non-repetitive
Min. Max. Units
- 2.0 V
-10mA
- 200 V/µs
- 500 A/µs
- 800 A/µs
1.4-V
- 4.0 mΩ
- 1.5 µs
--mA
-50mA
ConditionsParameterSymbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Gate trigger voltage V
Gate trigger current
Gate non-trigger voltage At V
DRM
V
DRM
= 12V, T
= 12V, T
DRM Tcase
= 25oC, RL = 6Ω
case
= 25oC, RL = 6Ω
case
= 125oC, RL = 12Ω
Peak forward gate voltage Anode positive with respect to cathode
Peak forward gate voltage Anode negative with respect to cathode
Peak reverse gate voltage
Peak forward gate current Anode positive with respect to cathode
Peak gate power -
Mean gate power
Typ. Max. Units
- 3.0 V
- 125 mA
- 0.2 V
- 3.0 V
- 0.25 V
-5V
-4A
-16W
-3W
www.dynexsemi.com
3/8
Page 4
TK12
CURVES
2000
Measured under pulse conditions
= 125˚C
T
j
1500
- (A)
T
1000
500
Instantaneous on-state current, I
0
0 4.0 8.0 12.0
Instantaneous on-state voltage V
- (V)
T
SINUSOIDAL CURRENT WAVEFORM
RECTANGULAR CURRENT WAVEFORM
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Maximum on-state power dissipation for sinusoidal
current waveform
4/8
Fig.4 Maximum allowable case temperature for sinusoidal
current waveform
www.dynexsemi.com
Page 5
TK12
Fig.5 Maximum on-state power dissipation for rectangular
current waveform
Fig.7 Gate trigger characteristics
Fig.6 Maximum allowable case temperature for rectangular
current waveform
Fig.8 Transient thermal impedance - junction to case
www.dynexsemi.com
5/8
Page 6
TK12
Fig.9 Multiplying factor for non-repetive sub-cycle surge on-
state current and I2t rating
Fig.10 Multiplying factor for non-repetive surge
on-state current
6/8
www.dynexsemi.com
Page 7
TK12
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Ø4
15 max
Ø8.4 ± 0.3
8 min
210 ± 10
30 max
M = M12
K = 1/2" 20 UNF
Mounting torque: 15Nm ±10%
Cathode lead colour: Red
Package outine type code: TO94
160 ± 10
Hex. 27AF
8 min
K = 20.6 ± 0.6
M = 18.0 ± 0.5
Nominal weight: 120g
Gate lead colour: White
www.dynexsemi.com
7/8
Page 8
TK12
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4252-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
8/8
www.dynexsemi.com
Loading...