Datasheet TGP6336-EEU Datasheet (TriQuint Semiconductor)

Product Data Sheet

6 - 18 GHz Phase Shifter TGP6336-EEU

Key Features and Performance

• 6 to 18 GHz Frequency Range

• 5-Bit Phase Shifter

• On-Chip CMOS-Compatible Drivers

• 9 dB Typical Insertion Loss at Midband

• 2:1 Typical Input SWR: 2.6:1 Typical
Output SWR

• 3.556 x 2.540 x 0.1016 mm (0.140 x

0.100 x 0.004 in.)

Description

The TriQuint TGP6336-EEU is a GaAs MMIC 5-bit phase shifter which operates
from 6 to 18 GHz. Phase can be shifted from 0 to 348.75 degrees in 11.25 degree
steps. Control bias voltages are 0 and 5 V. The insertion loss is typically 9 dB.

The TGP6336-EEU features on-chip CMOS-compatible drivers. The FET based
phase shifter offers wide band performance and small size for use in T/R modules
for EW applications.

Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attach methods as well as thermocompression and thermosonic wire-bonding
processes. Ground is provided to the circuitry through vias to the backside
metallization.

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TYPICAL
RELATIVE
PHASE

TYPICAL
INSERTION
LOSS

Product Data Sheet

TGP6336-EEU

TYPICAL
INPUT
RETURN LOSS

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TYPICAL OUTPUT

.

.

…

RETURN LOSS

Product Data Sheet

TGP6336-EEU

ABSOLUTE
MAXIMUM
RATINGS

Positive supply voltage, V+………………………………………………………………………………….. 8 V
Positive supply voltage range w ith respect to negative supply voltage, V+ - V-………………………
Negative supply voltage range, V-………………………………………………………………………….
Input c ontinuous w ave pow er, P

…………………………………………………………………………

IN

0 V to 12 V
0 V to -6 V

1 W
Control voltage range, SHF 90, SHF180, SHF11.25, SHF 22.5, SHF 45……………………………….. 0 V to V+
Operating Channel temperature, T
Mounting temperature (30 sec.), T
Storage temperature range, T

Ratings over oper ating channel temperature range, T

*.………………………………………………………………………150oC

CH

………………………………………………………………………….320oC

M

…………………………………………………………………………….-65 to 150oC

STG

(unless otherwise noted).

CH

Stresses beyond those listed under "Abs olute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and f unc tional operation of the devic e at thes e or any other conditions beyond
those indicated under "RF Charac teristic s" is not implied. Exposure to absolute maximum rated conditions
for extended periods may af f ect device reliability.

* Operating channel temperature (T

) w i l l dir e c tly af fec t t h e d e v i c e MTTF. Fo r max imum lif e, it is rec o mme nde d

CH

that channel temperature be maintained at the low est possible level.

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Product Data Sheet

TGP6336-EEU

BIAS TRUTH TABLE

RELATIV E SHF 180 SHF 90 SHF 45 SHF 22.5 SHF 11.25

PHASE SHIFT (Bond pad #10)

(degrees)

0.00 5 5 5 5 5

-11.25 5 5 5 5 0

-22.50 5 5 5 0 5

-33.75 5 5 5 0 0

-45.00 5 5 0 5 5

-56.25 5 5 0 5 0

-67.50 5 5 0 0 5

-78.75 5 5 0 0 0

-90.00 5 0 5 5 5

-101.25 5 0 5 5 0

-112.50 5 0 5 0 5

-123.75 5 0 5 0 0

-135.00 5 0 0 5 5

-146.25 5 0 0 5 0

-157.50 5 0 0 0 5

-168.75 5 0 0 0 0

-180.00 0 5 5 5 5

-191.25 0 5 5 5 0

-202.50 0 5 5 0 5

-213.75 0 5 5 0 0

-225.00 0 5 0 5 5

-236.25 0 5 0 5 0

-247.50 0 5 0 0 5

-258.75 0 5 0 0 0

-270.00 0 0 5 5 5

-281.25 0 0 5 5 0

-292.50 0 0 5 0 5

-303.75 0 0 5 0 0

-315.00 0 0 0 5 5

-326.25 0 0 0 5 0

-337.50 0 0 0 0 5

-348.75 0 0 0 0 0

Bond pad #11 (Bond pad #7) (Bond pad #8) (Bond pad #9)

V+ = 6 V, V- = -5 V, TA = 25oC

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Product Data Sheet

TGP6336-EEU

RF CHARACTERISTICS

RECOMMENDED BIAS
NETWORK

PARAMETER TEST CONDITIONS TYP UNIT

IL Insertion loss (all states) f = 6 - 18 GHz 9 dB

SWR(in) Input standing wave ratio f = 6 - 18 GHz (all states) 2.0:1 -

SWR(out) Output standing w ave ratio f = 6 - 18 GHz (all states) 2.6:1 -

P

(in)

1dB

PHASE TYPICAL RELATIVE PHASE SHIFT TYPICAL INPUT POWER at

(degrees) (degrees) (degrees) (degrees)

-348.75 -416±8 -326±9 380±11 25

Input pow er at 1–dB gain compression see next table

SHIFT at 6GHz at 12GHz at 18GHz 1–dB GAIN COMPRESSION at

MIDBA ND(d Bm)

-11.25 -13±2 -13.5±2 13±4 26

-22.5 -23±2 - 23±2 32±4 27

-45 -55±4 -43±3 58±7 26

-90 -107±5 -84±7 99±8 25

-180 -214±4 -165±8 186±16 25

V+ = 6 V, V- = -5 V, T

= 25oC

A

All bias resistors have a nominal value of 25-Ohms.

RF connections: Bond one 1-mil diameter, 20 to 25-mil-length gold bond wires at both RF Input and
RF Output for optimum RF performance.

Close placement of external components is essential for resonant-free performance.

Refer to TriQuint’s Gallium Arsenide Products Designers’ Information on our website under Application
Information.

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FUNCTIONAL BLOCK
DIAGRAM

Product Data Sheet

TGP6336-EEU

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MECHANICAL
DRAWING

Product Data Sheet

TGP6336-EEU

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.

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