T R I Q U I N T S E M I C O N D U C T O R , I N C .
TGL8784-SCC
PHOTO ENLARGEMENT
Analog Attenuator
8784
2 to 20 -GHz Frequency Range
●
2-dB Insertion Loss at Midband
●
10-dB Input/Output Return Loss
●
13-dB Variable Attenuation Range
●
Single Polarity Power Supply Required
●
1,702 x 1,219 x 0,152 mm (0.067 x 0.048 x 0.006 in.)
●
DESCRIPTION
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
The TriQuint TGL8784 -SCC is a monolithic variable attenuator which operates from
2 to 20 -GHz. This analog attenuator can operate from a single +2.5 v olt power supply if used with an
external variable voltage divider circuit. Typical RF performance at 10 -GHz is: Inser tion Loss 2- dB,
Maximum attenuation: 15 - dB at 10 -GHz, input and output return loss: better than 10 -dB. DC blocking capacitors are provided on-chip.
The TGL8784-SCC is an absorptive attenuator designed using MESFET technology employing a “PI”
configuration which reduces bias currents and simplifies bias networ ks. The broadband capabilities
of this device are versatile in many applications such as telecommunications, military, and space.
This device has a space heritage.
Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment
methods as well as thermocompression and thermosonic wire -bonding processes. The TGL8784 SCC is supplied in chip for m and is readily assembled using automated equipment. Groun d is
provided to the circuitry through vias to the backside metallization.
• www.triquint.com
Page 2
TGL8784-SCC
TYPICAL
ATTENUATION
VS CONTROL VOLTAGE
+V
C
TYPICAL
INSERTION LOSS
VS TEMPERATURE
0
2
4
6
8
10
Attenuation (dB)
12
14
16
2468101214161820
Frequency (GHz)
0.0
0.5
1.0
1.5
2.0
Insertion Loss (dB)
2.5
3.0
2468101214161820
Frequency (GHz)
+V
= +2.5V
CC
= 25°C
T
A
Attenuation
Control Voltage
:
+V
C
0.00 V
0.75 V
1.00 V
1.25 V
1.50 V
1.75 V
2.00 V
2.50 V
= +2.5V
+V
CC
= 0V
+V
C
Base Plate
Temperature:
-55 °C
-25 °C
0°C
+25°C
+55°C
+125°C
TYPICAL
INPUT POWER AT
1 dB ATTENUATION
CHANGE VS +V
C
P1dB
20
15
25
10
30
Input Power (dBm)
5
0
0.001.001.251.501.752.002.50
+VC Control Voltage (Volts)
Recommended Maximum PINis 24dBm.
P1dB data taken at control voltages (+V
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
) listed at major division points on graph only .
C
• www.triquint.com
+V
CC
T
A
= +2.5V
= 25°C
2 GHz
10 GHz
18 GHz
2
Page 3
TGL8784-SCC
TYPICAL
INPUT POWER AT
1 dB ATTENUATION CHANGE
VS TEMPERATURE
TYPICAL
INTPUT RETURN LOSS
28
25
22
19
P1dB (dBm)
16
13
10
-55-250+25+55+125
Temperature (C)
10
12
14
16
18
20
Input Return Loss (dB)
22
24
26
2468101214161820
Frequency (GHz)
+VCC= +2.5V
= 0V
+V
C
2 GHz
10 GHz
18 GHz
= +2.5V
+V
C
= 25°C
T
A
Attenuation (+VC):
0.00V
0.75V
1.00V
1.25V
1.50V
1.75V
2.00V
2.50V
TYPICAL
10
OUTTPUT RETURN LOSS
12
14
16
18
20
22
Output Return Loss (dB)
24
26
2468101214161820
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
Frequency (GHz)
• www.triquint.com
+V
= +2.5V
C
= 25°C
T
A
Attenuation (+V
0.00V
0.75V
1.00V
1.25V
1.50V
1.75V
2.00V
2.50V
):
C
3
Page 4
TGL8784-SCC
TYPICAL INSERTION
PHASE VS +V
C
ABSOLUTE
MAXIMUM RATINGS
0
-20
-40
-60
-80
-100
-120
S21 Phase - (deg)
-140
-160
-180
-200
0.000.751.001.251.501.752.002.50
+V = +2.5V
= 25°C
T
A
2GHz
10GHz
18GHz
+VC Control Voltage (Volts)
Positive Supply voltage, +V
................................................................................................................ 10 V
CC
Attenuation control voltage, +VC , (+VCC> +VC) ...................................................................... 0 V to +10 V
Operating channel temperature, TCH* .......................................................... ...................................... 150 °C
Mounting temperature (30 sec), TM .................................................................................................. 320 °C
Storage temperature range, T
Ratings o ver operating channel temperature range, TCH(unless otherwise noted)
...............................................................................................-65 to 150 °C
STG
Stresses beyond those listed under “Absolute Maximum Ratings” ma y cause permanent damage to the device.
These are stress ratings only, and functional operation of the de vice at these or any other conditions beyond
those indicated under “RF Characteristics” is not implied. E xposure to absolute maximum rated conditions for
extended periods may affect device reliability.
* Operating channel temperature directly affects the de vice MTTF. For maximum life, it is recommended that
channel temperature be maintained at the low est possible level.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
• www.triquint.com
4
Page 5
TGL8784-SCC
TYPICAL S-PARAMETERS
Insertion Loss
FrequencyS11S21S12S22
(GHz)dBANG(°)dBANG(°)dBANG(°)dBANG(°)
2.0-15.34-70.1-1.29-18.0-1.29-17.9-15.26-70.5
2.5-14.92-75.4-1.31-23.1-1.31-23.1-15.22-77.4
3.0-14.78-81.8-1.34-28.1-1.35-28.1-14.88-83.1
3.5-14.50-87.0-1.37-32.8-1.37-32.8-14.59-88.8
4.0-14.16-92.0-1.41-37.5-1.41-37.5-14.43-94.7
4.5-13.8482.1-1.44-42.1-1.45-42.1-14.0579.3
5.0-13.5377.2-1.48-46.7-1.48-46.6-13.8073.9
5.5-13.2872.6-1.52-51.2-1.52-51.1-13.6568.3
6.0-13.0568.1-1.55-55.6-1.55-55.6-13.4762.8
6.5-12.8463.8-1.59-60.1-1.59-60.1-13.3657.6
7.0-12.7059.5-1.63-64.5-1.63-64.5-13.2253.1
7.5-12.5255.4-1.66-68.9-1.66-68.8-13.1147.7
8.0-12.4751.8-1.69-73.2-1.69-73.2-13.1343.4
8.5-12.3748.2-1.72-77.6-1.72-77.6-13.1538.3
9.0-12.3545.1-1.74-82.0-1.74-82.0-13.2233.6
9.5-12.3741.2-1.77-86.4-1.77-86.4-13.2229.2
10.0-12.4437.9-1.79-90.8-1.79-90.8-13.3025.2
10.5-12.4934.2-1.81-95.2-1.82-95.2-13.3220.9
11.0-12.6031.1-1.83-99.7-1.83-99.6-13.4616.8
11.5-12.7027.8-1.85-104.1-1.85-104.1-13.5712.5
12.0-12.8424.6-1.86-108.6-1.86-108.6-13.718.7
12.5-13.0321.2-1.88-113.0-1.88-113.1-13.794.9
13.0-13.2617.7-1.90-117.6-1.90-117.6-13.921.0
13.5-13.5414.1-1.92-122.1-1.93-122.1-14.00-2.3
14.0-13.87-169.7-1.94-126.6-1.94-126.6-14.05174.4
14.5-14.31-173.8-1.96-131.1-1.96-131.2-14.08171.5
15.0-14.78-177.7-1.97-135.8-1.97-135.8-14.18169.0
15.5-15.32178.8-1.99-140.4-1.99-140.4-14.29166.4
16.0-15.75174.6-2.02-145.1-2.02-145.1-14.33163.5
16.5-16.23169.7-2.05-149.7-2.05-149.7-14.31160.2
17.0-16.73164.4-2.07-154.4-2.07-154.4-14.25156.6
17.5-17.44158.9-2.09-159.1-2.10-159.1-14.26153.2
18.0-18.18154.2-2.12-163.9-2.12-163.9-14.37149.9
18.5-19.00149.2-2.14-168.7-2.14-168.7-14.42146.8
19.0-19.94144.8-2.16-173.6-2.17-173.6-14.55143.8
19.5-20.86141.8-2.20-178.4-2.20-178.4-14.73140.8
20.0-22.03138.4-2.21176.7-2.22176.7-15.13138.4
20.5-23.40136.5-2.24171.7-2.24171.7-15.52136.0
21.0-25.21135.6-2.27166.6-2.25166.6-15.87133.3
21.5-27.33136.2-2.29161.4-2.30161.4-16.28131.1
22.0-29.25143.4-2.33156.2-2.33156.2-16.73128.7
TA= 25°C, +VCC= +2.5 V, +VC= 0 V
Reference planes for S -parameter data include bond wires as specified in the “Recom mended Assembly Diagram.”
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
Reference planes for S -parameter data include bond wires as specified in the “Recom mended Assembly Diagram.”
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
• www.triquint.com
6
Page 7
TGL8784-SCC
RF CHARACTERISTICS
THERMAL INFORMATION
PARAMETERTEST CONDITIONSTYPUNIT
ILInsertion Lossf=2.0 GHz , +Vc=0V1.5dB
f=10.0 GHz , +Vc=0V2.0dB
f=20.0 GHz , +Vc=0V2.5dB
Maximum Attenuationf=2 to 20 GHz, +Vc=+2.5V15dB
IRLInput Return Loss2.0 to 20 GHz10dB
ORLOutput Return Loss2.0 to 20 GHz10dB
P1dBInput Power at 1dB Atten. Change2,10 and 18 GHz*dBm
* P1dB varies depending on +VCsetting and frequency. See graph on page 2 for details.
+VCC=2.5 V, +VC= 0.0 V, TA= 25°C unless stated
PARAMETERTEST CONDITIONSNOMUNIT
R
* Thermal Resistance analysis based on Max PIN=24 dBm and +VCset for maximum attenuation.
Thermal resistance, channel to backside70°C Base,+VCC=+2.5V,+VC=+2.5V *300°C/W
JC
Power dissipation in Q1 is 135mW which represents a wor st-case condition.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
• www.triquint.com
7
Page 8
TGL8784-SCC
RF Output
RF Input
+Vc+Vcc
150pF
150pF
EQUIVALENT
SCHEMATIC
RECOMMENDED
ASSEMBLY DIAGRAM
Q3
RF
IN
Q1
100um
150um
+VC0V +V
RF
OUT
Q2
100um
CC
RF Input
100 pF100 pF
+V
C
Bond using two 1.0-mil diameter, 25 to 30-mil length gold bondwires at both RF Input and RF Output for optimum perfor mance.
Close placement of external components is essential.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
• www.triquint.com
RF Output
+V
CC
8
Page 9
TGL8784-SCC
MECHANICAL DRAWING
1,2192
(0.0480)
0,5563
(0.0219)
0,1296
(0.0051)
1
4
3
5
0.0
0.0
0,1372
(0.0054)
0,7595
(0.0299)
0,8611
(0.0339)
1,0871
(0.0428)
Units: millimeters (inches)
Thickness: 0,1524 (0.006) (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad.
Chip size ±0,0508 (0.002)
2
1,5646
(0.0616)
0,5563
(0.0219)
1,7018
(0.0670)
Bond pad #1 (RF Input):0,0960 x 0,2000 (0.0038 x 0.0079)
Bond pad #2 (RF Output):0,0960 x 0,2000 (0.0038 x 0.0079)
Bond pad #3 (+V
, Attenuation Control):0,0960 x 0,0960 (0.0038 x 0.0038)
C
Bond pad #4 (0V):0,0960 x 0,0960 (0.0038 x 0.0038)
Bond pad #5 (+V
):0,0960 x 0,0960 (0.0038 x 0.0038)
CC
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
• www.triquint.com
9
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