Page 1
INTEGRATED CIRCUITS
DATA SH EET
TEA5710; TEA5710T
AM/FM radio receiver circuit
Product specification
File under Integrated Circuits, IC01
March 1994
Page 2
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
FEATURES
• Wide supply voltage range: 2.0 to 12 V
• Low current consumption: 7.5 mA at AM, 9.0 mA at FM
• High selectivity with distributed IF gain
APPLICATIONS
• Portable AM/FM radio
• Clock radio
• Personal headphone radio
• LED driver for tuning indication
• High input sensitivity: 1.6 mV/m (AM), 2.0µV (FM) for 26
dB S/N
• Good strong signal behaviour: 10 V/m at AM, 500 mV at
FM
DESCRIPTION
The TEA5710 is a high performance Bimos IC for use in
AM/FM radios. All necessary functions are integrated:
from AM and FM front-end to detector output stages.
• Low output distortion: 0.8% at AM, 0.3% at FM
• Designed for simple and reliable PC-board layout
• High impedance MOSFET input on AM
QUICK REFERENCE DATA
Conditions AM: f
unless otherwise specified. Conditions FM: f
= 1 MHz; m = 0.3; fm = 1 kHz; VP= 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A,
i
= 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP= 3.0 V; measured in Fig.4 with
i
S1 in position B and S2 in position A, unless otherwise specified.
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
P
I
P
positive supply voltage 2.0 − 12 V
supply current
in AM mode 5.6 7.5 9.9 mA
in FM mode 7.3 9.0 11.2 mA
T
amb
operating ambient temperature range −15 −+60 °C
AM performance
V
in1
V
13
RF sensitivity 40 55 70 µV
AF output voltage 36 45 70 mV
THD total harmonic distortion − 0.8 2.0 %
FM performance
V
in3
V
13
RF sensitivity 1.0 2.0 3.8 µV
AF output voltage 47 58 69 mV
THD total harmonic distortion − 0.3 0.8 %
ORDERING INFORMATION
EXTENDED TYPE
NUMBER
PINS PIN POSITION MATERIAL CODE
PACKAGE
TEA5710 24 SDIL plastic SOT234AG
TEA5710T 24 SO24L plastic SOT137A
Notes
1. SOT234-1; 1996 August 27.
2. SOT137-1; 1996 August 27.
March 1994 2
(1)
(2)
Page 3
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
handbook, full pagewidth
RFGND
FM-OSC
V
P
RIPPLE
VSTAB
A
VSTAB
B
IFGND
AM-OSC
AM-RF
I
FM-RFIFM-RF
1 20 4 6 8 10 12
24
18
16
22
5
9
11
17
23
FM
FRONT-END
STABILIZER
AM
FRONT-END
FM-MIXER
O
FM
MIXER
FM
OSCILLATOR
AM
OSCILLATOR
AM
MIXER
AM-MIXER SUBGND
FM-IF1IFM-RF1
3
FM-IF2
O
FM
IF 1
I
FM
IF 2
FM
TEA5710
TEA5710T
AM-IF
2 719
AM-IF1IAM-IF2
AM
AGC
I/O
FM-DEM
FM
DETECTOR
AM/FM
SWITCH
AM/FM
INDICATOR
AM
DETECTOR
14
21
15
13
AM/FM
AM-AGC/
FM-AFC
IND
AF
MGE106
Fig.1 Block diagram.
March 1994 3
Page 4
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PINNING
SYMBOL PIN DESCRIPTION
FM-RF
I
AM-IF1
I
AM-MIXER 3 open-collector output to IFT
FM-MIXER 4 output to ceramic IF filter (output impedance typ. 330 Ω)
VSTAB
FM-IF1
AM-IF2
FM-IF1
VSTAB
FM-IF2
A
I
I/O
O
B
I
IFGND 11 ground of IF and detector stages
FM-DEM 12 ceramic discriminator pin
AF 13 audio output (output impedance typ. 5 kΩ)
AM/FM 14 switch terminal: open for AM; ground for FM
IND 15 field-strength dependent indicator
V
P
AM-OSC 17 parallel tuned AM-OSC circuit to ground
FM-OSC 18 parallel tuned FM-OSC circuit to ground
SUBGND 19 substrate and RF ground
FM-RF
O
AM-AGC/FM-AFC 21 AGC/AFC capacitor pin
RIPPLE 22 ripple capacitor pin
AM-RF
I
RFGND 24 FM-RF ground
1 FM-RF aerial input (input impedance typ. 50 Ω)
2 input from IFT or ceramic filter (input impedance typ. 3 kΩ)
5 stabilized internal supply voltage (A)
6 first FM-IF input (input impedance typ. 330 Ω)
7 input/output to IFT; output: current source
8 first FM-IF output (output impedance typ. 330 Ω)
9 stabilized internal supply voltage (B)
10 second FM-IF input (input impedance typ. 330 Ω)
16 positive supply voltage
20 parallel tuned FM-RF circuit to ground
23 parallel tuned AM aerial circuit to ground (total input capacitance typ. 3 pF)
March 1994 4
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Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
handbook, halfpage
AM-MIXER
FM-MIXER
VSTAB
AM-IF2
FM-IF1
VSTAB
FM-DEM
FM-RF
AM-IF
FM-IF1
FM-IF2
IFGND
I/O
1
I
2
I
3
4
5
A
6
I
TDA5710
7
8
O
9
B
10
I
11
12
MGE104
RFGND
24
AM-RF
23
RIPPLE
22
AM-AGC/FM-AFC
21
FM-RF
20
SUBGND
19
FM-OSC
18
AM-OSC
17
V
16
P
IND
15
AM/FM
14
AF
13
Fig.2 Pin configuration TEA5710.
handbook, halfpage
I
O
FM-RF
AM-IF
AM-MIXER
FM-MIXER
VSTAB
FM-IF1
AM-IF2
I/O
FM-IF1
VSTAB
FM-IF2
IFGND
FM-DEM
1
I
2
I
3
4
5
A
6
I
O
B
I
7
8
9
10
11
12
TDA5710T
MGE105
RFGND
24
AM-RF
23
RIPPLE
22
AM-AGC/FM-AFC
21
FM-RF
20
SUBGND
19
FM-OSC
18
AM-OSC
17
V
16
P
IND
15
AM/FM
14
AF
13
I
O
Fig.3 Pin configuration TEA5710T.
FUNCTIONAL DESCRIPTION
The TEA5710 incorporates internal stabilized power supplies. The maximum supply voltage is 12 V, the minimum voltage
can go down temporarily to 1.8 V without any loss in performance.
The AM circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 MHz), a field-strength
dependent indicator output and is designed for distributed selectivity.
The AM input is designed to be connected to the top of a tuned circuit. AGC controls the IF amplification and for large
signals it lowers the input impedance.
The first AM selectivity can be an IFT as well as an IFT combined with a ceramic filter; the second one is an IFT.
The FM circuit incorporates a tuned RF stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator
output and is designed for distributed IF ceramic filters. The FM quadrature detector uses a ceramic resonator.
March 1994 5
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Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER MIN. MAX. UNIT
V
P
T
stg
T
amb
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER VALUE UNIT
R
th j-a
positive supply voltage 0 12 V
storage temperature range −55 +150 °C
operating ambient temperature range −15 +60 °C
junction temperature range −15 +150 °C
from junction to ambient
for SDIL version TEA5710 69 K/W
for SO24L version TEA5710T 76 K/W
CIRCUIT DESIGN DATA
PIN NO. PIN SYMBOL
1 FM-RF
2
AM-IF1
input
DC PIN VOLTAGE (V)
EQUIVALENT CIRCUIT
AM FM
I
I
− 0.73
1.4 1.4
1
24
20
5
3 kΩ
2
220 Ω
MGE114
March 1994 6
11
MGE115
Page 7
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PIN NO. PIN SYMBOL
3
4
AM-MIXER
output
FM-MIXER
output
DC PIN VOLTAGE (V)
AM FM
1.4 1.4
− 1.0
EQUIVALENT CIRCUIT
3
5
MGE116
4
680 Ω
MGE117
5 VSTAB
6
FM-IF
input
16
A
I
1.4 1.4
− 0.73
22
5
5
120 Ω
6
2.7
kΩ
11
MGE118
MGE119
March 1994 7
Page 8
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PIN NO. PIN SYMBOL
7
AM-IF2
input/output
8
FM-IF1
output
I/O
O
DC PIN VOLTAGE (V)
AM FM
1.4 1.4
− 0.69
EQUIVALENT CIRCUIT
9
7
11
9
8
560 Ω
MGE121
MGE120
9 VSTAB
10
FM-IF2
input
B
I
1.4 1.4
− 0.73
11 IFGND 0 0
16
22
9
9
180 Ω
10
2.2
kΩ
11
MGE122
MGE123
March 1994 8
Page 9
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PIN NO. PIN SYMBOL
DC PIN VOLTAGE (V)
AM FM
12 FM-DEM − 1.0
13
AF
output
0.6 0.7
EQUIVALENT CIRCUIT
180 Ω
12
910 Ω
11
13
11
MGE124
25 kΩ
5 kΩ
MGE125
14
AM/FM
switch
1.3 0
15 IND 3.0 3.0
16 V
P
3.0 3.0
17 AM-OSC 0 0
14
MGE126
15
11
MGE127
17
19
MGE128
March 1994 9
Page 10
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PIN NO. PIN SYMBOL
DC PIN VOLTAGE (V)
AM FM
18 FM-OSC 0 0
19 SUBGND 0 0
20 FM-RF
O
00
EQUIVALENT CIRCUIT
18
10 kΩ
21
19
1
24
20
MGE129
220 Ω
MGE114
21
AM-AGC/
FM-AFC
0.1 0.7
March 1994 10
21
11
MGE130
Page 11
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PIN NO. PIN SYMBOL
DC PIN VOLTAGE (V)
AM FM
22 RIPPLE 2.1 2.1
23 AM-RF
I
00
EQUIVALENT CIRCUIT
16
22
11
19
MGE131
24 RFGND 0 0
23
1
24
20
MGE114
MGE132
220 Ω
March 1994 11
Page 12
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
AM CHARACTERISTICS
= 1 MHz; m = 0.3; fm = 1 kHz; VP= 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless
f
i
otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
P
C
i
G
c
V
in1
V
in2
V
13
THD total harmonic distortion V
V
in1
I
IND
I
INDOFF
supply current no input signal 5.6 7.5 9.9 mA
input capacitance V21 = 0.2 V − 3 − pF
front-end conversion gain V21 = 0.2 V 1.8 3.3 5.0
RF sensitivity S/N = 26 dB 40 55 70 µV
IF sensitivity V13 = 30 mV; 0.13 0.2 0.45 mV
in position A
S
1
AF output voltage V
= 3.16 mV; 36 45 70 mV
in2
in position A
S
1
= 1 mV − 0.8 2.0 %
in1
large signal handling m = 0.8; 150 300 − mV
THD ≤ 8%
indicator current V
indicator OFF current V
= 100 mV; 2 3.5 6 mA
in2
in position A
S
1
= 0 V; − 010µA
in2
in position A
S
1
FM CHARACTERISTICS
= 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless
f
i
otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
P
V
in3
V
in3
V
6/Vin3
supply current no input signal 7.3 9.0 11.2 mA
RF limiting sensitivity V13 = −3 dB 0.4 1.2 3.8 µV
RF sensitivity S/N = 26 dB 1.0 2.0 3.8 µV
front-end voltage gain V
≤ 1 mV;
in3
12 18 22 dB
including ceramic
filter K1
V
in4
IF sensitivity S2 in position B;
− 20 30 µV
V13 = −3 dB
V
13
AF output voltage V
THD total harmonic distortion V
= 1 mV 47 58 69 mV
in3
= 1 mV;
in3
− 0.3 0.8 %
∆f = 22.5 kHz
V
I
in3
IND
large signal handling THD ≤ 5% − 500 − mV
indicator current V
= 100 mV;
in4
2 3.5 6 mA
S2in position B
I
INDOFF
indicator OFF current V
= 0 V;
in4
− 010µA
S2 in position B
March 1994 12
Page 13
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
p
AF
V
handbook, full pagewidth
10
pF
8.2
AM-OSC
P
V
L4
22
pF
FM-OSCFM-RF
L3
18
pF
L2
nF
FM AM
CQS54
10
nF
10
100
TEA5710
TEA5710T
µF
µF
3456789101112
K3
S2
MGE108
L6
AB
K1 K2
L5
330 Ω
in4
g
R
V
(50 Ω)
10.7
MHz
Fig.4 Test circuit.
24 23 22 21 20 19 18 17 16 15 14 13
L8
40 µH
43 Ω
in1
V
g
R
6.8 Ω 680 pF
(50 Ω)
1
MHz
March 1994 13
1 nF
27 Ω
g
R
S1
560 Ω 91 Ω
(50 Ω)
100
12
in3
V
AB
MHz
3 kΩ
220nF
g
R
to pin 5
50 Ω 50 Ω
in2
V
(50 Ω)
468
kHz
Page 14
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
APPLICATION INFORMATION
MGE107
R2
10 Ω
C11
100 µF
HP
32 Ω
R1
handbook, full pagewidth
10 Ω
ON
C10
C4
100
FM AM
LED
µF
10
C5
CQS54
10 nF
OFF
nF
P
V
3V
pF
C8
8.2
CTd
8 pF
80
pF
Cd
1
C7
AM-OSC
P
3
V
L4
22
pF
CTc
8 pF
8765
AF
TDA7050T
123456789101112
C9
100 nF
K3
P1
4.7 kΩ
CDA10.7MC40
20
pF
Cc
2
C6
Cb
2
Ca
1
FM-OSCFM-RFI
1
L3
18
pF
CTb
8 pF
20
CTa
140
pF
1
L2
8 pF
pF
AM-RFI
2
L1
C3
C2
10 µF
100 µF
24 23 22 21 20 19 18 17 16 15 14 13
TEA5710
TEA5710T
34
12
C1
1
L6K1 K2
1
6
4.7
nF
2
3
SFE10.7MS3 SFE10.7MS2
3
2
L5
4
L7
60 nH
22
pF
CO
Fig.5 Application circuit of TEA5710 (AM: 522 to 1611 kHz, FM: 87.5 to 108 MHz) with stereo headphone amplifier TDA7050T.
March 1994 14
Page 15
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
handbook, full pagewidth
MGE109
Fig.6 Printed-circuit board layout (track side) for application circuit of Fig.5.
March 1994 15
Page 16
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
handbook, full pagewidth
GND AF
C12
HP
PLUG
P1
C10
ANT GND 100MHz
C1
C2
R2
L5
R3
C11
L6
K3
4.7
K1
K2
560
27
91
1
<FM AM>
1.5 V
1.5 V
680
C3
TEA5710
C5
C6
LED
C4
C7
C8
40 µH
F
M
L3
L2
ANT
OSC
6.8
1MHz
43
A
M
C9
L4
L1
MGE110
Fig.7 Printed-circuit board layout (component side) for application circuit of Fig.5.
March 1994 16
Page 17
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
Components for Figs 4 and 5
Coils
L1 AM-AERIAL ferroceptor
length = 6 cm
L1-2 = 625 µH
N1-2 = 105 turns
L2 FM-RF L1-2 = 66 nH
N1-2 = 2.5 turns
unloaded Q = 150
TOKO type S18
TOKO no. 301SS-0200
L3 FM-OSC L1-2 = 40 nH
N1-2 = 1.5 turns
unloaded Q = 150
TOKO type S18
TOKO no. 301SS-0100
L4 AM-OSC L1-3 = 270 µH
N1-2 = 18
N2-3 = 70
unloaded Q = 100
wire diameter 0.07 mm
TOKO type 7P
material TOKO 7BRS
L5 AM-IF1 L1-3 = 625 µH
N1-2 = 17 turns
N2-3 = 141 turns
N4-6 = 10 turns
C1-3 = 180 pF
unloaded Q = 90
wire diameter 0.07 mm
TOKO type 7P
material TOKO 7MCS
L6 AM-IF2 L1-3 = 625 µH
N1-2 = 28 turns
N2-3 = 130 turns
C1-3 = 180 pF
unloaded Q = 90
wire diameter 0.07 mm
TOKO type 7P
material TOKO 7MCS
3
2
1
S
3
2
1
S
3
2
1
S
MGE133
L5
MGE135
L4
S
MGE134
L6
4
6
March 1994 17
Page 18
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
L7 FM-AERIAL print-coil
L1-2 = 60 nH
N1-2 = 2.5 turns
L8 AM-RF test circuit only:
L1-3 = 40 µH
N1-3 = 34 turns
unloaded Q = 85
wire diameter 0.09 mm
TOKO type 7P
material TOKO 7BRS
Ceramic filters
K1 FM-IF1 Murata SFE 10.7 MS 3
K2 FM-IF2 Murata SFE 10.7 MS 2
K3 FM-DET Murata CDA 10.7 MC 40
3
L8
1
S
MGE136
Capacitors
C1 VARICON AM: 140/82 pF
FM: 2 × 20 pF
trimmer: 4 × 8 pF
TOKO type no. HU-22124
Application notes
1. Short circuiting: all pins are short-circuit proof except pin 1 (FM-RFI) with respect to the supply voltage pin.
2. Tuning indicator (at pin 15, IND): connect either a tuning indicator (e.g. a LED) between this pin and the supply
voltage (pin 16) or connect the pin IND to ground.
3. For an example of PC-board layout: see Figs 6 and 7.
March 1994 18
Page 19
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
AF
(dB)
−10
−20
−30
−40
−50
−60
−70
0
−1
10
handbook, full pagewidth
V
0 dB = 45 mV
110
10
signal
m = 0.3
noise
m = 0
2
MGE111
7
level (mA)
THD (%)
6
level
THD
m = 0.3
3
10
4
10
5
10
V
(µV)
in1
5
4
3
2
1
0
6
10
Fig.8 Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current
(level) as a function of RF input voltage (V
; f = 1 kHz). Measured in test circuit of Fig.4 with VP = 3.0 V.
in1
March 1994 19
Page 20
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
AF
0
(dB)
−10
−20
−30
−40
−50
−60
−70
110
handbook, full pagewidth
V
0 dB = 45 mV
MGE112
signal
m = 0.3
noise
m = 0
level
THD
m = 0.3
10
2
3
10
4
10
5
10
field-strength (µV)
6
10
7
level (mA)
THD (%)
6
5
4
3
2
1
0
7
10
Fig.9 Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current
(level) as a function of field-strength (f = 1 kHz). Measured at 1 MHz in application circuit of Fig.5 with
VP=3V.
March 1994 20
Page 21
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
AF
(dB)
−10
−20
−30
−40
−50
−60
−70
0
−1
10
handbook, full pagewidth
V
0 dB = 65 mV
signal
noise
THD
22.5 kHz
110
MGE113
7
ind (mA)
THD (%)
6
5
4
ind
2
10
3
10
4
10
5
10
V
(µV)
in3
3
2
1
0
6
10
Fig.10 Typical FM audio output voltage (VAF; signal), noise, THD and indicator current (ind) as a function of RF
input voltage (V
; df = 22.5 kHz). Measured in test circuit of Fig.4 at VP = 3 V.
in3
March 1994 21
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Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
PACKAGE OUTLINES
SDIP24: plastic shrink dual in-line package; 24 leads (400 mil)
D
seating plane
L
Z
24
pin 1 index
e
b
b
1
13
SOT234-1
M
E
A
2
A
A
1
w M
c
E
(e )
M
1
H
1
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
A
A
UNIT b
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
mm
OUTLINE
VERSION
SOT234-1
max.
4.7 0.51 3.8
12
min.
max.
IEC JEDEC EIAJ
1.3
0.8
b
1
0.53
0.40
REFERENCES
cEe M
0.32
0.23
(1) (1)
D
22.3
21.4
March 1994 22
9.1
8.7
12
(1)
Z
L
3.2
2.8
EUROPEAN
PROJECTION
M
10.7
10.2
E
12.2
10.5
e
1
w
H
0.181.778 10.16
ISSUE DATE
92-11-17
95-02-04
max.
1.6
Page 23
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
SO24: plastic small outline package; 24 leads; body width 7.5 mm
D
c
y
Z
24
pin 1 index
1
e
13
12
w M
b
p
SOT137-1
E
H
E
Q
A
2
A
1
L
p
L
detail X
(A )
A
X
v M
A
A
3
θ
0 5 10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
OUTLINE
VERSION
SOT137-1
A
max.
2.65
0.10
A
1
0.30
0.10
0.012
0.004
A2A3b
2.45
0.25
2.25
0.096
0.01
0.089
IEC JEDEC EIAJ
075E05 MS-013AD
0.49
0.36
0.019
0.014
p
0.32
0.23
0.013
0.009
UNIT
inches
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
(1)E(1) (1)
cD
15.6
7.6
7.4
0.30
0.29
1.27
0.050
15.2
0.61
0.60
REFERENCES
March 1994 23
eHELLpQ
10.65
10.00
0.42
0.39
1.4
0.055
1.1
0.4
0.043
0.016
1.1
1.0
0.043
0.039
PROJECTION
0.25
0.25 0.1
0.01
0.01
EUROPEAN
ywv θ
Z
0.9
0.4
8
0.004
ISSUE DATE
0.035
0.016
92-11-17
95-01-24
0
o
o
Page 24
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
“IC Package Databook”
our
(order code 9398 652 90011).
SDIP
OLDERING BY DIPPING OR BY WAVE
S
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg max
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
R
EPAIRING SOLDERED JOINTS
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
AVE SOLDERING
W
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
EPAIRING SOLDERED JOINTS
R
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
March 1994 24
Page 25
Philips Semiconductors Product specification
AM/FM radio receiver circuit TEA5710; TEA5710T
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1994 25
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