TRANSFORMER DEMAGNETIZATION AND
POWER TRANSISTOR SATURATION SENSING
.
FULL OVERLOAD AND SHORT-CIRCUIT
PROTECTION
.
PROPORTIONALBASECURRENT DRIVING
.
LOW STANDBY CURRENT BEFORE STARTING (1.6mA)
.
SYNCHRONIZATION CAPABILITY WITH INTERNAL PLL
.
THERMAL PROTECTION
TEA2019
CURRENTMODE SWITCHING
Due to its current mode regulation, the TEA2019
facilitates design of power supplies with following
features:
.
High stability regulationloop.
.
Automatic input voltage feed-forward in discontinuousmode fly-back.
.
Automaticpulse-by-pulsecurrentlimitation.
Typical applications: VideoDisplayUnits, TV sets,
typewriters, micro-computers and industrial applications. For more details, see application
noteAN406/0591.
DESCRIPTION
The TEA2019isan 14-pinDIP low costintegrated
circuit designed for the control of switch mode
power supplies. Ithasthe same basic functionsas
the TEA2018Abut with synchronization capability
by internal PLL. It is particularly suitable for applications where oscillator synchronization is required.
Operating Ambient Temperature Range– 20, + 70°C
Storage Temperature Range– 40, + 150°C
2019-01.TBL
Page 3
TEA2019
THERMALDATA
SymbolParameterValueUnit
R
th (j-a)
ELECTRICALOPERATING CHARACTERISTICS
=+25oC, potentialsreferenced to ground(unless otherwise specified)
T
amb
SymbolParameterMin.Typ.Max.Unit
+
V
CC
V
CC
V
CC(start)
V
CC(stop)
+
∆ V
CC
I
CC(sb)
V
th (Ic)
R
(Ic)
I
S
τ
max
A
V
+
I
I
V
(REF)
∆V
(REF)
∆T
T
OSC
∆f
OSC
∆T
∆f
OSC
∆V
CC
t
on(min)
Junction-ambient Thermal Resistance80°C/W
Positive Supply Voltage6.6815V
Negative Supply Voltage–1–3–5V
Minimum positive supply voltage required for starting (V
Minimum positive voltage below which device stops operating (V
Hysteresis on V
Standby Supply Current Before Starting [V
+
Threshold0.71.11.6V
CC
+
<V
CC
+
rising)66.6V
CC
]11.6mA
CC(start)
+
falling)4.24.95.6V
CC
Current Limitation Threshold Voltage (pin 12)–1100 –1000 –880mV
Collector Current Sensing Input Resistance1000Ω
Demagnetization Sensing Threshold75100125mV
Demagnetization Sensing Input Current (pin 5 grounded)1µA
Maximum Duty Cycle7080%
Error Amplifier Gain50
Error Amplifier Input Current (non-inverting input) (pin 6)2µA
Internal Reference Voltage2.32.42.5V
Reference Voltage Temperature Drift10
–4
Oscillator Free-running Period ( R = 59kΩ, C = 1.5nF)606570µs
Oscillator Frequency Drift with Temperature (V
Oscillator Frequency Drift with V
+
CC
(+ 8V < V
+
= + 8V)0.05%/°C
CC
+
< + 14V)0.5%/V
CC
Minimum Conducting Time (Ct= 1nF)2µs
2019-02.TBL
V/°C
2019-03.TBL
SYNCHRONIZATION INPUT (pin 7)
SymbolParameterMin.Typ.Max.Unit
V
R
Peak to Peak Sawtooth Voltage0.52.5V
7pp
Input Impedance20kΩ
(7)
PLL CHARACTERISTICS (see Test Circuit)
SymbolParameterMin.Typ.Max.Unit
Frequency Sensitivity100Hz/µA
∆TCapture Range (T
T
SYN max-TOSC
=64µsTyp.)T
OSC
OSC-TSYN min
5.5
4.5
8
8
SATURATION SENSING(pin 4)
SymbolParameterMin.Typ.Max. Unit
V
I
Input Threshold3.2V
(4)
Input Current (V4> 3.2V)50µA
(4)
Input Internal Resistance1kΩ
RECOMMENDED OPERATING CONDITIONS
SymbolParameterMin.Typ.Max. Unit
+
V
V
F
Positive Supply Voltage8V
CC
Negative Supply Voltage3V
CC
Output Current0.5A
I
O
Operating Frequency30kHz
oper
µs
µs
2019-04.TBL
2019-05.TBL
2019-06.TBL
2019-07.TBL
3/7
Page 4
TEA2019
TYPICALCIRCUIT
V66V5
10kΩ
10nF
22nF
5
891011121314
56kΩ
3.3nF
59kΩ
1%
1.5nF
V10
AS1
8.2kΩ
10nF
22nF
3.9kΩ
GENERALDESCRIPTION
(see applicationnote AN406/0591)
OperatingPrinciples (Figure 1)
On every period, the beginning of the conduction
time of the transistor is triggered by the fall of the
oscillatorsaw-toothwhich acts as clocksignal.The
periodT
T
osc
(T
osc
isgiven by :
osc
≈ 0.69 Ct(Rt+2000)
in seconds,Ctin Farad, Rtin Ω)
The end of the conduction time is determinedby a
signalissuedfromcomparingthefollowingsignals.
a) the s awtooth waveform representing the
collector current of the switching transistor,
sampledacross the emitter shunt resistor.
b) the output of the erroramplifier.
V3
470
22nF
4.7µF
31427
Ω
TEA2019
100Ω
47nF
V12V14
Figure1 : Current ModeControl
FLIP-FLOP
S
R
COMPARATOR
V
REF
ERROR
AMPLIFIER
ERROR
SIGNAL
OSCILLATOR
I SENSE
C
10
Ω
RAMP
GENERATOR
IC
0V
-1V
4.7µF
2019-03.EPS
V
i
OUTPUT
FILTER
I
C
Q
Re
LOAD
Base Drive
• Fast turn-on
On each period, a current pulse ensures fast
transistorswitch-on.
This pulse performs also the t
on(min)
functionat
the beginningof the conduction.
• Proportionalbase drive
In order to save power, the positivebase current
after the starting pulse becomes an image of the
collectorcurrent.
I
C
The ratio
4/7
is programmed as follows(Figure 2).
I
B
I
R
C
B
=
I
R
B
E
OSCILLATOR
SAWTOOTH
I (sample)
C
FLIP-FLOP
OUTPUT
t
Error
Signal
t
t
2019-05.EPS / 2019-04.EPS
Page 5
TEA2019
• Efficientand fast switch-off
When the positive base drive is removed, 1s
(typically) will elapse before the application of
negative current therefore allowing a safe and
rapid collector current fall.
Safety Functions
• Overload & short-circuitprotection
When the voltage applied to pin 12 exceeds the
current limitation thershold voltage [V
th(Ic)
outputflip-flopis reset andthetransistoristurned
off.
The shunt resistor R
must be calculated so as
e
to obtain the current limitation threshold on pin
12 at the maximum allowable collectorcurrent.
Figure2
R
B
TEA2019
12
1
I
B
R
e
], the
I
C
• Demagnetizationsensing
This function disablesany new conduction cycle
of the transistoras long as the core is not completelydemagnetized.
Whennot used, pin 5 mustbe grounded.
• t
on(max)
Outside the regulation area and in the absence
of current limitation, the maximum conduction
time is set at about 70% of theperiod.
• t
on(min)
A minimum conducting time is ensured during
each period (see Figure 2).
• Supply voltage monitoring
TheTEA2019willstopoperatingifVCC+onPin3
fallsbelow the thresholdlevel V
I
C
0
I
B
t
on(min)
0
COLLECTOR
CURRENT
BIAS
CURRENT
I
B
CC(stop)
t
R
B
I
C
R
e
t
.
I
C
StartingProcess (Figure 3)
Prior to starting, a low current is drawn from the
high voltage source through a high value resistor.
This current charges the power supply storage
capacitorof the device.
No output pulses are available before the voltage
on pin 3 hasreachedthe threshold level [V
+
rising].
V
CC
CC(start)
During this time the TEA2019 draws only 1mA
(typically). When the voltage on pin 3 reaches this
thresholdbase drive pulses appear.
The energy drawn by these pulses tends to discharge the power supply storage capacitor. However a hysteresisof about 1.1V (typically)(∆ V
CC
isimplemented to avoid the device from stopping.
Figure3 : Normal TEA2019 Start up Sequence
V
CC
V
CC (start)
,
6V
4.9V
V
CC
V
CC (stop)
)
t
5/7
2019-06.EPS
2019-07.EPS
Page 6
TEA2019
The TEA2019 has some additional capabilities
comparedto the TEA2018A:
• The oscillatorchargecurrentits suppliedthrough
aninternalcurrentgenerator,programmedexternally - instead of using an external charging
resistor. The sawtooth so obtainedis linear.
• The oscillator can be synchronized through an
internal PLL circuit. This feature provides synchronization between the external sync pulse
and the end of the switching transistor current.
The sync pulse can be for example the fly-back
pulse of a TV horizontal sweep circuit. As indicated in the application diagram, this pulse is
applied first to a R.C. network to obtain a low
voltagesawtooth and then to pin 7 of the circuit.
The PLL output (pin 8) supplies a correction
current to pin 9 through an external resistor,so
as to maintain the oscillator at the correct frequency(referto applicationnoteAN406/0591for
detailedinformation).
• In theTEA2019,the powersupply ofthepositive
output stage is separated from the main power
supply, so that it can be supplied from a lower
TYPICALAPPLICATION
voltagein orderto reducetheI.C. powerdissipation.
For low power applications, the circuit can be
normally supplied by connecting pins 2 and 3
together.
• In order to protectthesubstrate(pin13)from the
parasitic voltage peaks produced by negative
output current peaks at pin 14, the substrate
(pin 13) is internally separatedfrom the negative
supply (pin 14). They must be externally connectedtogether.
• The switching transistor saturation voltage can
be monitored at pin 4. To achieve this, a high
voltage diode must be connected between the
collector of the switching transistor and pin 4.
Also a resistor must be connectedfrom pin 4 to
+
(see application diagram). This arrange-
V
CC
ment is useful when the chosen value of base
current is very low and as a consequence the
saturationvoltagewillbehigh.In thisevent,when
V
increases above 2.5V,the base current
CE(sat)
isinterruptedbeforethenormalendof theperiod.
Remark: the TEA2019can also operate without
this protection.
4 x 1N4007
0.1
µF
RF Filter
2 x 12mH
µF
0.1
0.5A
Mains
Input
.
P
=60W
MAX
.
Free-runningFrequency : 15kHz
.
155V
≤ VAC≤ 250V
RMS
47µF
385V
82kΩ
47nF
C2
33nF
3.9kΩ
Sync.
Pulse
RMS
10kΩ
1.8kΩ
7
8
3.3nF
1N4148
18
µF
10
10k
Ω
65
TEA2019
910
56k
Ω56kΩ
1.5nF
22nF
Ω
10kΩ
4113
1N41483.9
Ω
120k
470µF
10
Ω
21
12
1314
4.7Ω
.
Outputs:120V ± 3%,0.4A
Ω
1W
BYT11-100
3 x 1N4001
3.3
100
10µF
BYT
11-100
Ω
BUV
46A
Ω
24V ±3%, 0.5A
.
VCEMonitoring
n3
Ω
1k
3W
BYT11-1000
0.47Ω
n0
2.2nF
680
3W
Ω
BYT11-800
100
F
µ
160V
n1
BYT11-800
n2
Primary Ground
SecondaryGround
470
40V
120V
0.4A
24V
0.5A
µF
2019-08.EPS
6/7
Page 7
PACKAGE MECHANICALDATA
14 PINS- PLASTICDIP
I
a1
TEA2019
b1
E
Dimensions
L
Z
b
148
17
Be
e3
D
Z
F
MillimetersInches
Min.Typ.Max.Min.Typ.Max.
a10.510.020
B1.391.650.0550.065
b0.50.020
b10.250.010
D200.787
E8.50.335
e2.540.100
e315.240.600
F7.10.280
i5.10.201
L3.30.130
Z1.272.540.0500.100
PM-DIP14.EPS
DIP14.TBL
Information furnishedis believed to be accurateand reliable. However, SGS-THOMSON Microelectronicsassumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third partieswhich may result
from its use. Nolicence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previouslysupplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Purchase of I
2
I
C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to
Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
2
C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips
2
the I
C Standard Specifications as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
7/7
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