Datasheet TEA1118, TEA1118A Datasheet (Philips)

查询TEA1118供应商

INTEGRATED CIRCUITS

DATA SH EET

TEA1118; TEA1118A

Versatile cordless transmisssion
circuit

Product specification
Supersedes data of 1996 Nov 26
File under Integrated Circuits, IC03

1997 Jul 14

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

FEATURES

• Low DC line voltage; operates down to 1.6 V (excluding
polarity guard)

• Voltage regulator with adjustable DC voltage

• Provides a supply for external circuits

• Symmetrical high impedance transmit inputs (62.5 kΩ)

with large signals handling capabilities [up to
1 V (RMS value) with less than 2% THD]

• Receive amplifier for dynamic, magnetic or
piezoelectric earpieces

• AGC line loss compensation for transmit and earpiece
amplifiers

• DTMF input with confidence tone (TEA1118A only)

• MUTE input for pulse or DTMF dialling (TEA1118A only)

• Transmit mute function, also enabling the DTMF input

(TEA1118A only).

APPLICATIONS

• Cordless telephone base stations

• Fax machines

• Answering machines.

GENERAL DESCRIPTION

The TEA1118 and TEA1118A are bipolar integrated
circuits that perform all speech and line interface functions
required in cordless telephone base stations. The ICs
operate at a line voltage down to 1.6 V DC (with reduced
performance) to facilitate the use of telephone sets
connected in parallel.

The TEA1118A offers in addition to the TEA1118
electronic switching between speech and dialling.
Moreover the transmit amplifier can be disabled during
speech condition by means of a transmit mute function.

All statements and values refer to all versions unless
otherwise specified.

QUICK REFERENCE DATA

I

= 15 mA; VEE=0V; R

line

=20Ω; AGC pin connected to VEE; Z

SLPE

= 600 Ω; f = 1 kHz; T

line

amb

=25°C;

unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

line current operating range normal operation 11 − 140 mA

with reduced performance 1 − 11 mA
V
I

CC

V
G

∆G

LN

CC

vtrx

vtrx

DC line voltage 3.35 3.65 3.95 V
internal current consumption VCC= 2.9 V − 1.15 1.4 mA
supply voltage for peripherals IP=0mA − 2.9 − V
typical voltage gain range

transmit amplifier (TEA1118A only) V
transmit amplifier (TEA1118 only) V
receive amplifier V

gain control range for transmit and

= 200 mV (RMS) −−11.3 dB

TX

= 200 mV (RMS) 5.3 − 11.3 dB

TX

= 4 mV (RMS) 19 − 31 dB

IR

I

=75mA − 5.8 − dB

line

receive amplifiers with respect to
I

=15mA

line

1997 Jul 14 2

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

TEA1118M SSOP16
TEA1118T SO14
TEA1118AM SSOP16
TEA1118AT SO14

BLOCK DIAGRAMS

handbook, full pagewidth

IR

PACKAGE

plastic shrink small outline package; 16 leads; body width 4.4 mm
plastic small outline package; 14 leads; body width 3.9 mm
plastic shrink small outline package; 16 leads; body width 4.4 mm
plastic small outline package; 14 leads; body width 3.9 mm

GAR

V−>I

QR

CURRENT

REFERENCE

V

LN

CC

SOT369-1
SOT108-1
SOT369-1
SOT108-1

TX+

TX−

V−>I

V

EE

AGC

CIRCUIT

AGC

TEA1118M

TEA1118T

LOW VOLTAGE

CIRCUIT

Fig.1 Block diagram (TEA1118).

GAT

REG

MBH273

SLPE

1997 Jul 14 3

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

handbook, full pagewidth

DTMF

TMUTE

TX+

TX−

GAR

IR

ATTENUATOR

TRANSMIT

MUTE

V−>I

V−>I

V−>I

V−>I

CIRCUIT

AGC

CURRENT

REFERENCE

QR

MUTE

V

CC

LN

REG

TEA1118AM

TEA1118AT

LOW VOLTAGE

CIRCUIT

V

EE

AGC

Fig.2 Block diagram (TEA1118A).

1997 Jul 14 4

MBH272

SLPE

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

PINNING

SYMBOL

LN 1111positive line terminal
SLPE 2222slope (DC resistance) adjustment
REG 3333line voltage regulator decoupling
GAT 4 4 −−transmit gain adjustment
TMUTE −−4 5 transmit mute input
DTMF −−5 6 dual-tone multi-frequency input
MUTE −−6 8 mute input to select speech or dialling mode
IR 7979receive amplifier input
AGC 8 10 8 10 automatic gain control/line loss compensation
TX− 9 11 9 11 inverting transmit amplifier input
TX+ 10 12 10 12 non-inverting transmit amplifier input
V

EE

QR 12 14 12 14 receive amplifier output
GAR 13 15 13 15 receive gain adjustment
V

CC

n.c. 5 and 6 5 to 8 − 4 and 7 not connected

TEA1118 TEA1118A

DESCRIPTION

SO14 SSOP16 SO14 SSOP16

11 13 11 13 negative line terminal

14 16 14 16 supply voltage for speech circuit and peripherals

1997 Jul 14 5

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

handbook, halfpage

Fig.3 Pin configuration (TEA1118T).

1

LN

2

SLPE GAR

3

REG QR

4

GAT

n.c. TX+
n.c. TX−

TEA1118T

5
6
7

IR AGC

MBH269

V

14

CC

13
12

V

11

EE

10

9
8

handbook, halfpage

Fig.4 Pin configuration (TEA1118M).

1

LN

2

SLPE GAR

3

REG QR

GAT

4

TEA1118M

5

n.c. TX+

6

n.c. TX−

7

n.c. AGC

8

n.c. IR

MBH268

V

16

CC

15
14

V

13

EE

12
11
10

9

handbook, halfpage

1

LN

2

SLPE GAR

3

REG QR

TMUTE

4

TEA1118AT

5

DTMF TX+

6

MUTE TX−

7

IR AGC

MBH271

V

14

CC

13
12

V

11

EE

10

9
8

Fig.5 Pin configuration (TEA1118AT).

1997 Jul 14 6

handbook, halfpage

Fig.6 Pin configuration (TEA1118AM).

1

LN

2

SLPE GAR

3

REG QR

n.c.

4

TEA1118AM

TMUTE TX+

5
6

DTMF TX−

7

n.c. AGC

8

MUTE IR

MBH270

V

16

CC

15
14

V

13

EE

12
11
10

9

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

FUNCTIONAL DESCRIPTION

All data given in this chapter are typical values, except
when otherwise specified.

Supplies (pins LN, SLPE, V

and REG)

CC

The supply for the TEA1118 and TEA1118A and their
peripherals is obtained from the telephone line.

The ICs generate a stabilized reference voltage (V

ref

)
between pins LN and SLPE. This reference voltage is
equal to 3.35 V, is temperature compensated and can be
adjusted by means of an external resistor (RVA). It can be
increased by connecting the RVA resistor between
pins REG and SLPE (see Fig.11), or decreased by
connecting the RVA resistor between pins REG and LN.
The voltage at pin REG is used by the internal regulator to
generate the stabilized reference voltage and is decoupled
by a capacitor (C

) which is connected to VEE.

REG

This capacitor, converted into an equivalent inductance
(see Section “Set impedance”), realizes the set impedance
conversion from its DC value (R

) to its AC value

SLPE

(RCC in the audio-frequency range). The voltage at pin
SLPE is proportional to the line current. Figure 7 illustrates
the supply configuration.

The ICs regulate the line voltage at pin LN, and it can be
calculated as follows:

VLN=V
I

SLPE=Iline

ref+RSLPE

− ICC− IP− I* = I

× I

SLPE

sh

where:

I

: line current

line

ICC: current consumption of the IC
IP: supply current for peripheral circuits
I*: current consumed between LN and V

EE

Ish: the excess line current shunted to SLPE (and VEE)
via LN.

The preferred value for R

is 20 Ω. Changing R

SLPE

SLPE

will
affect more than the DC characteristics; it also influences
the transmit gain and the DTMF gain (TEA1118A only), the
gain control characteristics, the sidetone level and the
maximum output swing on the line.

by the formula (see also Figs 8 and 9). R

CCint

is the
internal equivalent resistance of the voltage supply point,
and I

is the current consumed by the output stage of the

rec

earpiece amplifier.
VCC=V
V

CC0=VLN

CC0

− RCC× I

− R

CCint

× (IP− I

CC

rec

)

The DC line current flowing into the set is determined by
the exchange supply voltage (V
resistance (R
(R

) and the reference voltage (V

line

), the DC resistance of the telephone line

exch

), the feeding bridge

exch

). With line currents

ref

below 7.5 mA, the internal reference voltage (generating
V

) is automatically adjusted to a lower value.

ref

This means that more sets can operate in parallel with DC
line voltages (excluding the polarity guard) down to an
absolute minimum voltage of 1.6 V. At currents below

7.5 mA, the circuit has limited transmit and receive levels.
This is called the low voltage area.

Set impedance

In the audio frequency range, the dynamic impedance is
mainly determined by the R

resistor. The equivalent

CC

impedance of the circuits is illustrated in Fig.10.

Transmit amplifier (pins TX+, TX− and GAT)

The TEA1118 and TEA1118A have symmetrical transmit
inputs. The input impedance between pins TX+ and TX− is
equal to 62.5 kΩ; the input impedance between pins
TX+/TX− and V

is equal 36.5 kΩ. The voltage gain from

EE

pins TX+/TX− to pin LN is set at 11.3 dB.
Automatic gain control is provided on this amplifier for line

loss compensation.
The gain of the TEA1118 can be decreased by connecting

an external resistor R
The adjustment range is equal to 6 dB. A capacitor C

between pins GAT and REG.

GAT

GAT

connected between pins GAT and REG can be used to
provide a first-order low-pass filter. The cut-off frequency
corresponds to the time constant C
R

is the internal resistor which sets the gain with a

GATint

GAT

×(R

GATint

// R

GAT

typical value of 27 kΩ.

Transmit mute (pin TMUTE; TEA1118A only)

).

The internal circuitry of the TEA1118 and TEA1118A is
supplied from pin VCC. This voltage supply is derived from
the line voltage by means of a resistor (RCC) and must be
decoupled by a capacitor C

. It may also be used to

VCC

supply peripheral circuits such as dialling or control
circuits. The VCC voltage depends on the current
consumed by the IC and the peripheral circuits as shown

1997 Jul 14 7

The transmit amplifier can be disabled by activating the
transmit mute function. When TMUTE is LOW, the normal
speech mode is entered, depending on the level on MUTE.
When TMUTE is HIGH, the transmit amplifier inputs are
disabled while the DTMF input is enabled (no confidence
tone is provided). The voltage gain between LN and
TX+/TX− is attenuated; the gain reduction is 80 dB.

Philips Semiconductors Product specification

h

Versatile cordless transmisssion circuit TEA1118; TEA1118A

Receive amplifier (pins IR, GAR and QR)

The receive amplifier has one input (IR) and one output
(QR). The input impedance between pins IR and VEE is
20 kΩ. The voltage gain from pin IR to pin QR is set at
31 dB. The gain can be decreased by connecting an
external resistor R

between pins GAR and QR; the

GAR

adjustment range is 12 dB. Two external capacitors C
(connected between GAR and QR) and C

GARS

(connected

between GAR and VEE) ensure stability.

R

R

line

I

line

exch

V

exch

TEA1118

TEA1118A

I

sh

I

SLPE

LN

SLPE

R

SLPE

20 Ω

andbook, full pagewidth

GAR

The C

capacitor provides a first-order low-pass filter.

GAR

The cut-off frequency corresponds to the time constant
C

GAR

× (R

GARint

// R

GAR

). R

is the internal resistor

GARint

which sets the gain with a typical value of 100 kΩ. The
condition C

GARS

=10×C

must be fulfilled to ensure

GAR

stability.
Automatic gain control is provided on this amplifier for line

loss compensation.

R

CC

619 Ω

V

from preamp

REG
C

REG

4.7 µF

CC

I

CC

*

I

V

EE

C

VCC

100 µF

MBH274

peripheral

circuits

I

p

Fig.7 Supply configuration.

1997 Jul 14 8

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

2.5

handbook, halfpage

I

P

(mA)

2

1.5

1

0.5

0

01234

(1) With RVA resistor.
(2) Without RVA resistor.

MBE783

(1)(2)

VCC (V)

Fig.8 Typical current IP available from VCC for

peripheral circuits at I

=15mA.

line

handbook, halfpage

V

R

CCO

Fig.9 VCC voltage supply for peripheral.

CCintVCC

V

EE

I

rec

PERIPHERAL

CIRCUIT

I

P

MBE792

REG

× R

V

LN

EE

SLPE

SLPE

× RP.

L

EQ

V

R

SLPE

20 Ω

ref

R

P

REG V

C

REG

4.7 µF

R

CC

619 Ω

CC

C

VCC

100 µF

MBE788

handbook, halfpage

LEQ=C
RP= internal resistance (15.5kΩ).

Fig.10 Equivalent impedance between LN and VEE.

1997 Jul 14 9

6.0

handbook, halfpage

V

ref

(V)

5.0

4.0

(1)

(2)

3.0

4

10

(1) Influence of RVA on V
(2) V

without influence of RVA.

ref

5

10

.

ref

6

10

RVA (Ω)

Fig.11 Reference voltage adjustment by RVA.

MGD176

10

7

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

Automatic Gain Control (pin AGC)

The TEA1118 and TEA1118A perform automatic line loss
compensation. The automatic gain control varies the gain
of the transmit amplifier and the gain of the receive
amplifier in accordance with the DC line current.
The control range is 5.8 dB (which corresponds
approximately to a line length of 5 km for a 0.5 mm
diameter twisted-pair copper cable with a DC resistance of
176 Ω/km and an average attenuation of 1.2 dB/km).
The ICs can be used with different configurations of
feeding bridge (supply voltage and bridge resistance) by
connecting an external resistor R
and VEE. This resistor enables the I
currents to be increased (the ratio between I

between pins AGC

AGC

and I

start

stop

start

and I

line

stop

is
not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.

DTMF amplifier (pin DTMF; TEA1118A only)

When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones can be heard in the earpiece
at a low level (confidence tone).

The TEA1118A has an asymmetrical DTMF input.
The input impedance between DTMF and V

is 20 kΩ.

EE

The voltage gain from pin DTMF to pin LN is 17.4 dB.
The automatic gain control has no effect on the DTMF

amplifier.

Mute function (pin MUTE; TEA1118A only)

The mute function performs the switching action between
the speech mode and the dialling mode. When MUTE is
LOW or open-circuit, the transmit and receive amplifiers
inputs are enabled while the DTMF input is disabled,
depending on the TMUTE level. When MUTE is HIGH, the
DTMF input is enabled and the transmit and receive
amplifiers inputs are disabled.

Sidetone suppression

The TEA1118 and TEA1118A anti-sidetone network
comprising R

CC

//Z

line

, R

ast1

, R

ast2

, R

ast3

, R

SLPE

and Z

bal

(see Fig.12) suppresses the transmitted signal in the
earpiece. Maximum compensation is obtained when the
following conditions are fulfilled:

× R

R

SLPERast1

R

k

Z

ast2

=

-----------------------------------------------------------------------

kZ

bal

R

ast3RSLPE

×()

R

ast1RSLPE

×=

line

R

CC

+()×=

ast2Rast3

+()×[]

The scale factor k is chosen to meet the compatibility with

should

bal

bal

.

a standard capacitor from the E6 or E12 range for Z
In practice, Z

varies considerably with the line type and

line

the line length. Therefore, the value chosen for Z
be for an average line length which gives satisfactory
sidetone suppression with short and long lines.
The suppression also depends on the accuracy of the
match between Z

and the impedance of the average

bal

line.
The anti-sidetone network for the TEA1118 and

TEA1118A (as shown in Fig.16) attenuates the receive
signal from the line by 32 dB before it enters the receive
amplifier.
The attenuation is almost constant over the whole audio
frequency range.

A Wheatstone bridge configuration (see Fig.13) may also
be used.

More information on the balancing of an anti-sidetone
bridge can be obtained in our publication

Handbook for Wired Telecom Systems, IC03b”

“Applications

, order

number 9397 750 00811.

MUTE and TMUTE levels for different modes (TEA1118A only)
Table 1 Required MUTE and TMUTE levels to enable the different possible modes

CHANNEL

MODE

TRANSMIT RECEIVE DTMF

CONFIDENCE

TONE

MUTE TMUTE

Speech on on off off LOW LOW
DTMF dialling off off on on HIGH X
Transmit mute off on on off LOW HIGH

Note

1. X = don’t care.

1997 Jul 14 10

(1)

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

handbook, full pagewidth

LN

R

R

SLPE

CC

SLPE

Z

line

V

EE

R

ast1

Z

R

ast2

bal

IR

Z

ir

MBE787

I

m

R

ast3

Fig.12 Equivalent circuit of TEA1118 and TEA1118A family anti-sidetone bridge.

andbook, full pagewidth

R

R

CC

SLPE

Z

line

V

EE

LN

SLPE

I

m

Fig.13 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.

1997 Jul 14 11

R

Z

bal

ast1

IR

Z

ir

R

A

MBE786

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

V

n(max)

I

line

P

tot

T

stg

T

amb

positive continuous line voltage VEE− 0.4 12 V
repetitive line voltage during switch-on or line

− 0.4 13.2 V

V

EE

interruption
maximum voltage on all pins VEE− 0.4 VCC+ 0.4 V
line current R

SLPE

=20Ω;

− 140 mA

see Figs 14 and 15

total power dissipation T

TEA1118T; TEA1118AT − 384 mW

=75°C;

amb

see Figs 14 and 15

TEA1118M; TEA1118AM − 312 mW
IC storage temperature −40 +125 °C
operating ambient temperature −25 +75 °C

HANDLING

This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with

“MIL STD 883C - method 3015”

.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air

TEA1118T; TEA1118AT 130 K/W

TEA1118M; TEA1118AM mounted on epoxy board

160 K/W

40.1 × 19.1 × 1.5 mm

1997 Jul 14 12

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

150

handbook, halfpage

I

line

(mA)

130

110

90

70

50

30

212

(1) T
(2) T
(3) T
(4) T

amb
amb
amb
amb

=45°C; P
=55°C; P
=65°C; P
=75°C; P

MBH275

(1)

(2)
(3)

(4)

46810

V

LNVSLPE

= 615mW.

tot

= 538mW.

tot

= 461mW.

tot

= 384mW.

tot

Fig.14 SO14 safe operating area.

(V)

160

handbook, halfpage

I

line

(mA)

140

120

100

80

60

40

20

212

(1) T

=45°C; P

amb

(2) T

=55°C; P

amb

(3) T

=65°C; P

amb

(4) T

=75°C; P

amb

Fig.15 SSOP16 safe operating area.

MBH276

(1)
(2)
(3)
(4)

46810

V

LNVSLPE

= 500mW.

tot

= 437mW.

tot

= 375mW.

tot

= 312mW.

tot

(V)

CHARACTERISTICS

I

= 15 mA; VEE=0V; R

line

=20Ω; AGC pin connected to VEE; Z

SLPE

= 600 Ω; f = 1 kHz; T

line

amb

=25°C;

unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies (pins V

V

ref

stabilized voltage between LN and

, VCC, SLPE and REG)

LN

3.1 3.35 3.6 V

SLPE

V

LN

V

LN(exR)

∆V

LN(T)

DC line voltage I

DC line voltage with an external
resistor R

VA

DC line voltage variation with

=1mA − 1.6 − V

line

I

=4mA − 2.45 − V

line

I

= 15 mA 3.35 3.65 3.95 V

line

= 140 mA −−6.9 V

I

line

R

VA(SLPE−REG)

T

= −25 to +75 °C −±30 − mV

amb

=27kΩ− 4.4 − V

temperature referenced to 25 °C
I
V
R

CC

CC

CCint

internal current consumption VCC= 2.9 V − 1.15 1.4 mA

supply voltage for peripherals IP=0mA − 2.9 − V

equivalent supply voltage

IP= 0.5 mA − 550 620 Ω

resistance

1997 Jul 14 13

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Transmit amplifier (pins TX+, TX− and GAT)

 input impedance

Z

i

differential between pins
TX+ and TX−

single-ended between pins

G
∆G

vtx

vtx(f)

TX+/TX− and V
voltage gain from TX+/TX− to LN VTX= 200 mV (RMS) 10.1 11.3 12.5 dB
gain variation with frequency

EE

f = 300 to 3400 Hz −±0.2 − dB

referred to 1 kHz

∆G

vtx(T)

gain variation with temperature

T

= −25 to +75 °C −±0.3 − dB

amb

referred to 25 °C

CMRR common mode rejection ratio − 60 − dB
∆G

vtxr

V

LN(max)

V

TX(max)

V

notx

gain voltage reduction range
(TEA1118 only)

maximum sending signal
(RMS value)

maximum transmit input voltage
(RMS value)

noise output voltage at pin LN; pins
TX+/TX− shorted through 200 Ω

external resistor connected
between GAT and REG

I

= 15 mA; THD = 2% 1.4 1.7 − V

line

= 4 mA; THD = 10% − 0.8 − V

I

line

I

= 15 mA; THD = 2% − 0.45 − V

line

I

= 75 mA; THD = 2% − 0.9 − V

line

psophometrically weighted
(P53 curve)

− 62.5 − kΩ

− 36.5 − kΩ

−−6dB

−−84 − dBmp

Transmit mute (pin TMUTE; TEA1118A only)

∆G

vtxm

V

IL

V

IH

I

TMUTE

gain reduction TMUTE = HIGH − 80 − dB
LOW level input voltage VEE− 0.4 − VEE+ 0.3 V
HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V
input current input level = HIGH − 1.25 3 µA

Receive amplifier (pins IR, QR and GAR)

Z

 input impedance − 20 − kΩ

i

G
∆G

vrx

vrx(f)

voltage gain from IR to QR VIR= 4 mV (RMS) 29.8 31 32.2 dB
gain variation with frequency

f = 300 to 3400 Hz −±0.2 − dB

referenced to 1 kHz

∆G

vrx(T)

gain variation with temperature

T

= −25 to +75 °C −±0.3 − dB

amb

referenced to 25 °C

∆G

vrxr

gain voltage reduction range external resistor connected

−−12 dB

between GAR and QR

V

o(rms)

maximum receive signal
(RMS value)

IP= 0 mA sine wave drive;
RL= 150 Ω; THD = 2%

I

= 0 mA sine wave drive;

P

− 0.25 − V

− 0.35 − V

RL= 450 Ω; THD = 2%

V

norx(rms)

noise output voltage at pin QR
(RMS value)

TEA1118 −−89 − dBVp

TEA1118A −−86 − dBVp

IR open-circuit;
RL= 150 Ω;
psophometrically weighted
(P53 curve)

1997 Jul 14 14

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Automatic gain control (pin AGC)

∆G

vtrx

gain control range for transmit and
receive amplifiers with respect to
I

=15mA

line

I

start

highest line current for maximum
gain

I

stop

lowest line current for minimum gain − 61 − mA

DTMF amplifier (pin DTMF; TEA1118A only)

 input impedance − 20 − kΩ

Z

i

G

∆G

vdtmf

vdtmf(f)

voltage gain from DTMF to LN V

gain variation with frequency
referenced to 1 kHz

∆G

vdtmf(T)

gain variation with temperature
referenced to 25 °C

G

vct

voltage gain from DTMF to QR
(confidence tone)

I

=75mA; − 5.8 − dB

line

− 26 − mA

= 100 mV (RMS);

DTMF

16.2 17.4 18.6 dB

MUTE or TMUTE = HIGH
f = 300 to 3400 Hz −±0.2 − dB

T

= −25 to + 75 °C −±0.4 − dB

amb

V

= 100 mV (RMS);

DTMF

−−18 − dB

RL= 150 Ω

Mute function (pin MUTE; TEA1118A only)

V

IL

V

IH

I

MUTE

∆G

trxm

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V
HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V
input current input level = HIGH − 1.25 3 µA
gain reduction for transmit and

receive amplifiers

MUTE = HIGH − 80 − dB

1997 Jul 14 15

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

APPLICATION INFORMATION

PD

input

pd6

R

pd5

R

470 kΩ

68 kΩ

k, full pagewidth

R

ast1

RCC619 Ω

C

130 kΩ

pd4

R

470 kΩ

BC558

supply for

peripheral

dial and

control

circuits

MUTE

TMUTE

(2)

TX+

C

TX−

1 nF

GARS

C

(1)

signal

from

CC

V

DTMF

(2)

(2)

TEA1118

TEA1118A

LN

IR

QR

GAR

IR

C

GAR

ast2

R

100 pF

3.92 kΩ

circuits

VCC

100 µF

EE

V

REG AGC

SLPE GAT

ast3

R

390 Ω

BC547

BF473

REG

C

SLPE

R

bal

Z

4.7 µF

20 Ω

pd1

R

470 kΩ

pd3

R

1 MΩ

pd2

R

470 kΩ

BZX79C10

BC547

MBH277

prot

10 Ω

R

4 x

BAS11

BZX79C12

V

95 V

a/b

line

telephone

b/a

1997 Jul 14 16

BSN254

R

limit

3.9 Ω

Fig.16 Typical application of the TEA1118 and TEA1118A in sets with pulse dialling or flash facilities.

(1) TEA1118 only.

(2) TEA1118A only.

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

PACKAGE OUTLINES

SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm

D

c

y

Z

16

pin 1 index

9

18

w M

b

e

p

A

2

A

1

E

H

E

detail X

SOT369-1

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

mm

OUTLINE

VERSION

SOT369-1

A

max.

1.5

0.15

0.00

A2A

1

1.4

1.2

IEC JEDEC EIAJ

0.25

b

3

p

0.32

0.25

0.20

0.13

UNIT A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

(1)E(1)

cD

5.30

5.10

REFERENCES

4.5

4.3

0.65

1997 Jul 14 17

eHELLpQZywv θ

1.0

0.75

0.45

0.65

0.45

PROJECTION

0.130.2 0.1

EUROPEAN

6.6

6.2

(1)

0.48

0.18

ISSUE DATE

94-04-20
95-02-04

o

10

o

0

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

SO14: plastic small outline package; 14 leads; body width 3.9 mm

D

c

y

Z

14

pin 1 index

1

e

8

A

7

w M

b

p

SOT108-1

E

H

E

2

A

1

L

detail X

A

X

v M

A

Q

(A )

A

3

θ

L

p

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT

mm

inches

A

max.

1.75

0.069

A

1

0.25

0.10

0.010

0.004

A2A

1.45

1.25

0.057

0.049

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.019

0.0100

0.014

0.0075

(1)E(1)

cD

8.75

8.55

0.35

0.34

4.0

3.8

0.16

0.15

1.27

0.050

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

OUTLINE

VERSION

SOT108-1

IEC JEDEC EIAJ

076E06S MS-012AB

REFERENCES

1997 Jul 14 18

eHELLpQZywv θ

1.05

0.041

1.0

0.4

0.039

0.016

0.7

0.25

0.6

0.028

0.01 0.004

0.024

0.25 0.1

0.01

6.2

5.8

0.244

0.228

EUROPEAN

PROJECTION

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

o

8

o

0

95-01-23
97-05-22

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SO and
SSOP packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

(order code 9398 652 90011).

SSOP
Wave soldering is not recommended for SSOP packages.

This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

METHOD (SO AND SSOP)
During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.
SO
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be

parallel to the solder flow.

• The package footprint must incorporate solder thieves at

the downstream end.

1997 Jul 14 19

Repairing soldered joints

Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron

(less than 24 V) applied to the flat part of the lead. Contact

time must be limited to 10 seconds at up to 300 °C. When

using a dedicated tool, all other leads can be soldered in

one operation within 2 to 5 seconds between

270 and 320 °C.

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Jul 14 20

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

NOTES

1997 Jul 14 21

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

NOTES

1997 Jul 14 22

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

NOTES

1997 Jul 14 23

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax.[phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str.6,

220050 MINSK, Tel.[phone],Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 JamesBourchier Blvd., 1407SOFIA,
Tel. [phone], Fax.[phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 HongKong Industrial Technology Centre,
72 TatChee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone],Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard80, PB 1919, DK-2300COPENHAGEN S,

Tel. [phone], Fax.[phone]
Finland: Sinikalliontie 3, FIN-02630ESPOO,

Tel. [phone],Fax. [phone]
France: 4 Ruedu Port-aux-Vins, BP317, 92156SURESNES Cedex,

Tel. [phone],Fax. [phone]
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Tel. [phone],Fax. [phone]
Greece: No. 15,25th MarchStreet, GR 17778TAVROS/ATHENS,

Tel. [phone], Fax.[phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr.Annie BesantRoad, Worli, MUMBAI 400025,
Tel. [phone], Fax.[phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax.[phone]
Israel: RAPAC Electronics, 7Kehilat SalonikiSt, PO Box 18053,

TEL AVIV61180, Tel. [phone], Fax.[phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone],Fax. [phone]
Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO108,

Tel. [phone], Fax.[phone]
Korea: Philips House, 260-199Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax.[phone]
Malaysia: No. 76Jalan Universiti, 46200PETALING JAYA, SELANGOR,

Tel. [phone],Fax. [phone]
Mexico: 5900 GatewayEast, Suite 200, ELPASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg.VB,

Tel. [phone], Fax.[phone]

New Zealand: 2 WagenerPlace, C.P.O. Box1041, AUCKLAND,

Tel. [phone], Fax.[phone]

Norway: Box 1, Manglerud0612, OSLO,

Tel. [phone], Fax.[phone]

Philippines: Philips Semiconductors Philippines Inc.,

106 ValeroSt. SalcedoVillage, P.O. Box2108 MCC,MAKATI,

Metro MANILA, Tel.[phone],Fax. [phone]

Poland: Ul. Lukiska10, PL 04-123WARSZAWA,

Tel. [phone], Fax.[phone]

Portugal: see Spain

Romania: see Italy

Russia: Philips Russia, Ul. Usatcheva35A, 119048 MOSCOW,

Tel. [phone], Fax.[phone]

Singapore: Lorong 1, ToaPayoh, SINGAPORE 1231,

Tel. [phone],Fax. [phone]

Slovakia: see Austria

Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O.Box 7430 Johannesburg2000,

Tel. [phone], Fax.[phone]

South America: Rua doRocio 220, 5thfloor, Suite 51,

04552-903 SãoPaulo, SÃO PAULO- SP, Brazil,

Tel. [phone], Fax.[phone]

Spain: Balmes 22, 08007BARCELONA,

Tel. [phone], Fax.[phone]

Sweden: Kottbygatan 7, Akalla, S-16485STOCKHOLM,

Tel. [phone], Fax.[phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. [phone], Fax.[phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N.Rd., Sec.1,

TAIPEI, Taiwan Tel. [phone], Fax.[phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-BangnaRoad Prakanong, BANGKOK10260,

Tel. [phone], Fax.[phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. [phone], Fax.[phone]

Ukraine: PHILIPS UKRAINE, 4 PatriceLumumba str., Building B, Floor7,

252042 KIEV, Tel.[phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB35BX, Tel. [phone], Fax.[phone]

United States: 811 EastArques Avenue, SUNNYVALE, CA94088-3409,

Tel. [phone]

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing &Sales Communications,
Building BE-p, P.O.Box 218, 5600MD EINDHOVEN, TheNetherlands, Fax.[phone]

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 417027/1200/03/pp24 Date of release: 1997 Jul14 Document order number: 9397 750 02613