Datasheet TEA1112T-C1, TEA1112AT-C1, TEA1112A-C1, TEA1112-C1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1996 Feb 16
File under Integrated Circuits, IC03

1997 Mar 26

INTEGRATED CIRCUITS

TEA1112; TEA1112A

Low voltage versatile telephone
transmission circuits with dialler
interface

1997 Mar 26 2

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

FEATURES

• Low DC line voltage; operates down to 1.6 V (excluding
polarity guard)

• Voltage regulator with adjustable DC voltage

• Provides a supply for external circuits

• Symmetrical high impedance inputs (64 kΩ) for

dynamic, magnetic or piezo-electric microphones

• Asymmetrical high impedance input (32 kΩ) for electret
microphones

• DTMF input with confidence tone

• Mute input for pulse or DTMF dialling (MUTE for

TEA1112 and MUTE for TEA1112A)

• Receiving amplifier for dynamic, magnetic or
piezo-electric earpieces

• AGC line loss compensation for microphone and
earpiece amplifiers

• LED on-hook/off-hook status indication

• Microphone mute function (MMUTE for TEA1112 and

MMUTE for TEA1112A).

APPLICATION

• Line powered telephone sets, cordless telephones, fax
machines and answering machines.

GENERAL DESCRIPTION

The TEA1112; TEA1112A are bipolar integrated circuits
that perform all speech and line interface functions
required in fully electronic telephone sets. They perform
electronic switching between speech and dialling. The ICs
operate at a line voltage down to 1.6 V DC (with reduced
performance) to facilitate the use of telephone sets
connected in parallel.

A current (proportional to the line current and internally
limited to a typical value of 19.5 mA) is available to drive
an LED which indicates the on-hook/off-hook status.

The microphone amplifier can be disabled during speech
condition by means of a microphone mute function.

All statements and values refer to all versions unless
otherwise specified.

QUICK REFERENCE DATA

I

line

= 15 mA; VEE=0V; R

SLPE

=20Ω; AGC pin connected to VEE; Z

line

= 600 Ω; f = 1 kHz; T

amb

=25°C;

unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

line current operating range normal operation 11 − 140 mA

with reduced performance 1 − 11 mA

I

LED(max)

maximum supply current available I

line

=18mA − 0.5 − mA

I

line

>76mA − 19.5 − mA

V

LN

DC line voltage 3.35 3.65 3.95 V

I

CC

internal current consumption VCC= 2.9 V − 1.15 1.4 mA

V

CC

supply voltage for peripherals Ip=0mA − 2.9 − V

G

vtrx

typical voltage gain range

microphone amplifier V

MIC

= 2 mV (RMS) 38.8 − 51.8 dB

receiving amplifier V

IR

= 6 mV (RMS) 19.2 − 31.2 dB

∆G

vtrx

gain control range for microphone and
receiving amplifiers with respect to
I

line

=15mA

I

line

=85mA − 5.8 − dB

∆G

vtxm

microphone amplifier gain reduction − 80 − dB

1997 Mar 26 3

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

ORDERING INFORMATION

BLOCK DIAGRAM

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TEA1112 DIP16

plastic dual in-line package; 16 leads (300 mil)

SOT38-4

TEA1112A DIP16

plastic dual in-line package; 16 leads (300 mil)

SOT38-4

TEA1112T SO16

plastic small outline package; 16 leads; body width 3.9 mm

SOT109-1

TEA1112AT SO16

plastic small outline package; 16 leads; body width 3.9 mm

SOT109-1

Fig.1 Block diagram.

handbook, full pagewidth

ATT.

DTMF

V− I

MICRO

MUTE

AGC

CIRCUIT

CURRENT

REFERENCE

LOW VOLTAGE

CIRCUIT

LED

DRIVER

IR

MIC

MIC

MMUTE

or

MMUTE

V

EE

I

LED

AGC

SLPE

TEA1112

TEA1112A

5

4

231013

11

6

12

15 14 8

16

1

7

9

GAS

GAR

QR

LN

V

CC

REG

MUTE

or

MUTE

V− I

V− I

V− I

MBE793

1997 Mar 26 4

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

PINNING

SYMBOL

PIN

DESCRIPTION

TEA1112 TEA1112A

LN 1 1 positive line terminal
SLPE 2 2 slope (DC resistance) adjustment
I

LED

3 3 available output current to drive a LED
REG 4 4 line voltage regulator decoupling
GAS 5 5 sending gain adjustment
MMUTE 6 − microphone mute input
MMUTE − 6 microphone mute input (active LOW)
DTMF 7 7 dual-tone multi-frequency input
MUTE 8 − mute input to select speech or dialling mode
MUTE − 8 mute input to select speech or dialling mode (active LOW)
IR 9 9 receiving amplifier input
AGC 10 10 automatic gain control/line loss compensation
MIC− 11 11 inverting microphone amplifier input
MIC+ 12 12 non-inverting microphone amplifier input
V

EE

13 13 negative line terminal
QR 14 14 receiving amplifier output
GAR 15 15 receive gain adjustment
V

CC

16 16 supply voltage for speech circuit and peripherals

Fig.2 Pin configuration (TEA1112).

handbook, halfpage

TEA1112

MBE791

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

V

CC

GAR
QR
V

EE

MIC+
MIC−
AGC
IR

LN

SLPE

I

LED

REG
GAS

MMUTE

DTMF
MUTE

Fig.3 Pin configuration (TEA1112A).

handbook, halfpage

TEA1112A

MBE790

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

V

CC

GAR
QR
V

EE

MIC+
MIC−
AGC
IR

LN

SLPE

I

LED

REG

GAS

MMUTE

DTMF
MUTE

1997 Mar 26 5

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

FUNCTIONAL DESCRIPTION

All data given in this chapter are typical values, except
when otherwise specified.

Supply (pins LN, SLPE, V

CC

and REG)

The supply for the TEA1112; TEA1112A and their
peripherals is obtained from the telephone line.

The ICs generate a stabilized reference voltage (V

ref

)
between pins LN and SLPE. This reference voltage is
equal to 3.35 V, is temperature compensated and can be
adjusted by means of an external resistor (RVA). It can be
increased by connecting the RVA resistor between
pins REG and SLPE (see Fig.5), or decreased by
connecting the RVA resistor between pins REG and LN.
The voltage at pin REG is used by the internal regulator to
generate the stabilized reference voltage and is decoupled
by a capacitor (C

REG

) which is connected to VEE. This
capacitor, converted into an equivalent inductance (see
Section “Set impedance”), realizes the set impedance
conversion from its DC value (R

SLPE

) to its AC value (R

CC

in the audio-frequency range). The voltage at pin SLPE is
proportional to the line current. Figure 4 illustrates the
supply configuration.

The ICs regulate the line voltage at pin LN, and can be
calculated as follows:

V

LN

V

refRSLPEISLPE

×+=

I

SLPEIlineICC

– Ip– I∗– I

LED

I+

sh

==

Where:

I

line

= line current
ICC= current consumption of the IC
Ip= supply current for peripheral circuits
I* = current consumed between LN and V

EE

I

LED

= supply current for the LED component

Ish= the excess line current shunted to SLPE (and VEE)
via LN.

The preferred value for R

SLPE

is 20 Ω. Changing R

SLPE

will
affect more than the DC characteristics; it also influences
the microphone and DTMF gains, the LED supply current
characteristic, the gain control characteristics, the
sidetone level and the maximum output swing on the line.

The internal circuitry of the TEA1112; TEA1112A is
supplied from pin VCC. This voltage supply is derived from
the line voltage by means of a resistor (RCC) and must be
decoupled by a capacitor C

VCC

. It may also be used to
supply peripheral circuits such as dialling or control
circuits. The VCC voltage depends on the current
consumed by the IC and the peripheral circuits as shown
by the formula (see also Figs.6 and 7). R

CCint

is the

internal impedance of the voltage supply point, and I

rec

is
the current consumed by the output stage of the earpiece
amplifier.

V

CC

V

CC0RCCintIpIrec

–()×–=

V

CC0

VLNR

CCICC

×–=

Fig.4 Supply configuration.

handbook, full pagewidth

LED

DRIVER

I

sh

R

p

R

d

I

SLPE

REG

LN

R

GASint

from pre amp

SLPE

45.5 kΩ

15.5 kΩ

V

EE

V

d

V

CC

R

CC

C

VCC

I

CC

C

REG

R

SLPE

V

exch

R

exch

I

LED

I

LED

I

line

R

line

TEA1112

TEA1112A

I*

I

P

peripheral

circuits

100 µF

4.7 µF

20 Ω

69 kΩ

619 Ω

MBE789

1997 Mar 26 6

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

The DC line current flowing into the set is determined by
the exchange supply voltage (V

exch

), the feeding bridge

resistance (R

exch

), the DC resistance of the telephone line

(R

line

) and the reference voltage (V

ref

). With line currents
below 7.5 mA, the internal reference voltage (generating
V

ref

) is automatically adjusted to a lower value. This means
that more sets can operate in parallel with DC line voltages
(excluding the polarity guard) down to an absolute
minimum voltage of 1.6 V. At currents below 7.5 mA, the
circuit has limited sending and receiving levels. This is
called the low voltage area.

Set impedance

In the audio frequency range, the dynamic impedance is
mainly determined by the R

CC

resistor. The equivalent

impedance of the circuits is illustrated in Fig.8.

LED supply (pin I

LED

)

The TEA1112; TEA1112A give an on-hook/off-hook status
indication. This is achieved by a current made available to
drive an LED connected between pins I

LED

and LN. In the
low voltage area, which corresponds to low line current
conditions, no current is available for this LED.

Fig.5 Reference voltage adjustment by RVA.

(1) Influence of RVA on V

ref

.

(2) V

ref

without influence of RVA.

handbook, halfpage

6.0

V

ref

(V)

3.0

4.0

(1)

(2)

5.0

RVA (Ω)

MGD176

10

5

10

4

10

6

10

7

For line currents higher than a threshold, I

LEDstart

, the I

LED

current increases proportionally to the line current (with a
ratio of one third). The I

LED

current is internally limited to

19.5 mA (see Fig.9). If no LED device is used in the
application, the I

LED

pin should be shorted to pin SLPE.

For 17 mA < I

line

< 77 mA:

This LED driver is referenced to SLPE. Consequently, all
the I

LED

supply current will flow through the R

SLPE

resistor.

The AGC characteristics are not disturbed (see Fig.4).

Microphone amplifier (pins MIC+, MIC− and GAS)

The TEA1112; TEA1112A have symmetrical microphone
inputs. The input impedance between pins MIC+ and
MIC− is 64 kΩ (2 × 32 kΩ). The voltage gain from
pins MIC+/MIC− to pin LN is set at 51.8 dB (typ). The gain
can be decreased by connecting an external resistor R

GAS

between pins GAS and REG. The adjustment range is
13 dB. A capacitor C

GAS

connected between pins GAS
and REG can be used to provide a first-order low-pass
filter. The cut-off frequency corresponds to the time
constant C

GAS

× (R

GASint

// R

GAS

). R

GASint

is the internal

resistor which sets the gain with a typical value of 69 kΩ.
Automatic gain control is provided on this amplifier for line

loss compensation.

Microphone mute (pin MMUTE; TEA1112)

The microphone amplifier can be disabled by activating
the microphone mute function. When MMUTE is LOW, the
normal speech mode is entered, depending on the level on
MUTE (see Table 1). When MMUTE is HIGH, the
microphone amplifier inputs are disabled while the DTMF
input is enabled (no confidence tone is provided).
The voltage gain between LN and MIC+/MIC− is
attenuated; the gain reduction is 80 dB (typ).

Microphone mute (pin

MMUTE; TEA1112A)

The microphone amplifier can be disabled by activating
the microphone mute function. When MMUTE is LOW, the
microphone amplifier inputs are disabled while the DTMF
input is enabled (no confidence tone is provided).
The voltage gain between LN and MIC+/MIC− is
attenuated; the gain reduction is 80 dB (typ). When
MMUTE is HIGH, the normal speech mode is entered,
depending on the level on MUTE (see Table 1).

I

LED

I

line

17–

3

----------------------

=

1997 Mar 26 7

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

Receiving amplifier (pins IR, GAR and QR)

The receiving amplifier has one input (IR) and one output
(QR). The input impedance between pin IR and pin VEE is
20 kΩ. The voltage gain from pin IR to pin QR is set at

31.2 dB (typ). The gain can be decreased by connecting
an external resistor R

GAR

between pins GAR and QR; the

adjustment range is 12 dB. Two external capacitors C

GAR

(connected between GAR and QR) and C

GARS

(connected

between GAR and VEE) ensure stability. The C

GAR

capacitor provides a first-order low-pass filter. The cut-off
frequency corresponds to the time constant
C

GAR

× (R

GARint

// R

GAR

). R

GARint

is the internal resistor
which sets the gain with a typical value of 100 kΩ.
The relationship C

GARS

=10×C

GAR

must be fulfilled to

ensure stability.
The output voltage of the receiving amplifier is specified for

continuous wave drive. The maximum output swing
depends on the DC line voltage, the RCC resistor, the I

CC

current consumption of the circuit, the Ip current
consumption of the peripheral circuits and the load
impedance.

Automatic gain control is provided on this amplifier for line
loss compensation.

Automatic gain control (pin AGC)

The TEA1112; TEA1112A perform automatic line loss
compensation. The automatic gain control varies the gain
of the microphone amplifier and the gain of the receiving
amplifier in accordance with the DC line current.
The control range is 5.8 dB (which corresponds
approximately to a line length of 5 km for a 0.5 mm
diameter twisted-pair copper cable with a DC resistance of
176 Ω/km and an average attenuation of 1.2 dB/km).
The ICs can be used with different configurations of
feeding bridge (supply voltage and bridge resistance) by
connecting an external resistor R

AGC

between pins AGC

and VEE. This resistor enables the I

start

and I

stop

line

currents to be increased (the ratio between I

start

and I

stop

is
not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.

Mute function (pin MUTE; TEA1112)

The mute function performs the switching action between
the speech mode and the dialling mode. When MUTE is
LOW or open-circuit, the microphone and receiving
amplifiers inputs are enabled while the DTMF input is
disabled, depending on the MMUTE level (see Table 1).
When MUTE is HIGH, the DTMF input is enabled and the
microphone and receiving amplifiers inputs are disabled.

Mute function (pin

MUTE; TEA1112A)

The mute function performs the switching between the
speech mode and the dialling mode. When MUTE is LOW
or open-circuit, the DTMF input is enabled and the
microphone and receiving amplifiers inputs are disabled.
When MUTE is HIGH, the microphone and receiving
amplifiers inputs are enabled while the DTMF input is
disabled, depending on the MMUTE level (see Table 1).

DTMF amplifier (pin DTMF)

When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones can be heard in the earpiece
at a low level (confidence tone).

The TEA1112; TEA1112A have an asymmetrical DTMF
input. The input impedance between DTMF and V

EE

is

20 kΩ. The voltage gain from pin DTMF to pin LN is

25.5 dB. When an external resistor is connected between
pins REG and GAS to decrease the microphone gain, the
DTMF gain varies in the same way (the DTMF gain is

26.3 dB lower than the microphone gain with no AGC
control).

The automatic gain control has no effect on the DTMF
amplifier.

1997 Mar 26 8

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

Fig.6 Typical current Ip available from VCC for

peripheral circuits at I

line

= 15 mA.

(1) With RVA resistor.
(2) Without RVA resistor.

handbook, halfpage

2.5

0

01234

MBE783

0.5

1

1.5

2

VCC (V)

(1)(2)

I

P

(mA)

Fig.7 VCC supply voltage for peripherals.

handbook, halfpage

PERIPHERAL

CIRCUIT

I

P

I

rec

R

CCintVCC

V

EE

V

CCO

MBE792

Fig.8 Equivalent impedance between LN and VEE.

LEQ=C

REG

× R

SLPE

× RP.
RP= internal resistance.
RP= 15.5kΩ.

handbook, halfpage

LN

V

EE

SLPE

R

SLPE

C

REG

REG V

CC

R

CC

4.7 µF

100 µF

C

VCC

619 Ω

20 Ω

R

P

V

ref

L

EQ

MBE788

Fig.9 Available current to drive an LED.

handbook, halfpage

0 100

100

0

20

MBE784

40

60

80

20 40 60 80

I

line

(mA)

I

(mA)

I

SLPE

I

LED

I

sh

1997 Mar 26 9

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

MUTE and MMUTE levels for different modes
Table 1 Required MUTE and MMUTE levels to enable the different possible modes

IC TEA1112 TEA1112A

Mode MUTE MMUTE

MUTE MMUTE
Speech L L H H
DTMF dialling H X L X
Microphone mute L H H L

SIDETONE SUPPRESSION

The TEA1112; TEA1112A anti-sidetone network
comprising RCC // Z

line

, R

ast1

, R

ast2

, R

ast3

, R

SLPE

and Z

bal

(see Fig.10) suppresses the transmitted signal in the
earpiece. Maximum compensation is obtained when the
following conditions are fulfilled:

The scale factor k is chosen to meet the compatibility with
a standard capacitor from the E6 or E12 range for Z

bal

.

In practice, Z

line

varies considerably with the line type and

the line length. Therefore, the value chosen for Z

bal

should

R

SLPERast1

× R

CC

R

ast2Rast3

+()×=

k

R

ast2

R

ast3RSLPE

+()×()

R

ast1RSLPE

×()

-----------------------------------------------------------------------

=

Z

bal

kZ

line

×=

be for an average line length which gives satisfactory
sidetone suppression with short and long lines.
The suppression also depends on the accuracy of the
match between Z

bal

and the impedance of the average

line.
The anti-sidetone network for the TEA1112; TEA1112A

(as shown in Fig.14) attenuates the receiving signal from
the line by 32 dB before it enters the receiving amplifier.
The attenuation is almost constant over the whole audio
frequency range. A Wheatstone bridge configuration (see
Fig.11) may also be used.

More information on the balancing of an anti-sidetone
bridge can be obtained in our publication

“Applications

Handbook for Wired Telecom Systems, IC03b”

, order

number 9397 750 00811.

Fig.10 Equivalent circuit of TEA1112; TEA1112A family anti-sidetone bridge.

handbook, full pagewidth

MBE787

I

m

Z

ir

IR

R

ast1

R

ast3

R

ast2

SLPE

R

SLPE

V

EE

Z

line

R

CC

LN

Z

bal

1997 Mar 26 10

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

Fig.11 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.

handbook, full pagewidth

MBE786

I

m

Z

ir

IR

Z

bal

R

ast1

SLPE

R

SLPE

V

EE

Z

line

R

CC

LN

R

A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

positive continuous line voltage VEE− 0.4 12 V
repetitive line voltage during switch-on or

line interruption

V

EE

− 0.4 13.2 V

V

n(max)

maximum voltage on pins I

LED

, SLPE VEE− 0.4 VLN+ 0.4 V

maximum voltage on all other pins V

EE

− 0.4 VCC+ 0.4 V

I

line

line current R

SLPE

=20Ω; see

Figs 12 and 13

− 140 mA

P

tot

total power dissipation T

amb

=75°C;

see Figs 12 and 13

TEA1112; TEA1112A − 625 mW
TEA1112T; TEA1112AT − 416 mW

T

stg

IC storage temperature −40 +125 °C

T

amb

operating ambient temperature −25 +75 °C

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air (TEA1112; TEA1112A) 80 K/W
thermal resistance from junction to ambient in free air mounted on epoxy board

40.1 × 19.1 × 1.5 mm (TEA1112T; TEA1112AT)

130 K/W

1997 Mar 26 11

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

Fig.12 Safe operating area (TEA1112; TEA1112A).

handbook, halfpage

12

150

30

246810

MBE782

110

70

I

line

(mA)

VLN − V

SLPE

(V)

(1)

(2)

(3)(4)

LINE T

amb

(°C) P

tot

(W)

(1) 45 1.000
(2) 55 0.875
(3) 65 0.750
(4) 75 0.625

Fig.13 Safe operating area (TEA1112T; TEA1112AT).

LINE T

amb

(°C) P

tot

(W)

(1) 45 0.666
(2) 55 0.583
(3) 65 0.500
(4) 75 0.416

handbook, halfpage

212

150

30

70

110

MLC202

46810

130

90

50

I

LN

(mA)

V

LNVSLPE

(V)

(1)
(2)
(3)

(4)

1997 Mar 26 12

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

CHARACTERISTICS

I

line

= 15 mA; VEE=0V; R

SLPE

=20Ω; AGC pin connected to VEE; Z

line

= 600 Ω; f = 1 kHz; T

amb

=25°C;

unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply (pins V

LN

, VCC, SLPE and REG)

V

ref

stabilized voltage between LN and
SLPE

3.1 3.35 3.6 V

V

LN

DC line voltage I

line

=1mA − 1.6 − V

I

line

=4mA − 2.45 − V

I

line

= 15 mA 3.35 3.65 3.95 V

I

line

= 140 mA −−6.9 V

V

LN(exR)

DC line voltage with an external
resistor R

VA

R

VA(SLPE−REG)

= 27 kΩ− 4.4 − V

∆V

LN(T)

DC line voltage variation with
temperature referred to 25 °C

T

amb

= −25 to +75 °C −±30 − mV

I

CC

internal current consumption VCC= 2.9 V − 1.15 1.4 mA

V

CC

supply voltage for peripherals Ip=0mA − 2.9 − V

R

CCint

equivalent supply voltage
impedance

Ip= 0.5 mA − 550 620 Ω

LED supply (pin I

LED

)

I

line(h)

highest line current for I

LED

< 0.5 mA − 18 − mA

I

line(l)

lowest line current for maximum I

LED

− 76 − mA

I

LED(max)

maximum supply current available − 19.5 − mA

Microphone amplifier (pins MIC+, MIC− and GAS)
Z

i

 input impedance

differential between pins
MIC+ and MIC−

− 64 − kΩ

single-ended between pins
MIC+/MIC− and V

EE

− 32 − kΩ

G

vtx

voltage gain from MIC+/MIC− to LN V

MIC

= 2 mV (RMS) 50.6 51.8 53 dB

∆G

vtx(f)

gain variation with frequency
referred to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vtx(T)

gain variation with temperature
referred to 25 °C

T

amb

= −25 to +75 °C −±0.3 − dB

CMRR common mode rejection ratio − 80 − dB
∆G

vtxr

gain voltage reduction range external resistor

connected between
GAS and REG

−−13 dB

V

LN(max)

maximum sending signal
(RMS value)

I

line

= 15 mA; THD = 2% 1.4 1.7 − V

I

line

= 4 mA; THD = 10% − 0.8 − V

V

notx

noise output voltage at pin LN; pins
MIC+/ MIC− shorted through 200 Ω

psophometrically weighted
(P53 curve)

−−70.5 − dBmp

1997 Mar 26 13

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

Microphone mute (pins MMUTE; TEA1112 and MMUTE; TEA1112A)

∆G

vtxm

gain reduction in microphone MUTE
mode

− 80 − dB

V

IL

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V

V

IH

HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V

I

MMUTE

input current input level = HIGH − 1.25 3 µA

Receiving amplifier (pins IR, QR and GAR)

Zi input impedance − 20 − kΩ
G

vrx

voltage gain from IR to QR VIR= 6 mV (RMS) 29.7 31.2 32.7 dB

∆G

vrx(f)

gain variation with frequency
referred to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vrx(T)

gain variation with temperature
referred to 25 °C

T

amb

= −25 to +75 °C −±0.3 − dB

∆G

vrxr

gain voltage reduction range external resistor

connected between
GAR and QR

−−12 dB

V

o(rms)

maximum receiving signal (RMS
value)

Ip= 0 mA sine wave drive;
RL= 150 Ω; THD = 2%

− 0.25 − V

I

p

= 0 mA sine wave drive;

RL= 450 Ω; THD = 2%

− 0.35 − V

V

norx(rms)

noise output voltage at pin QR (RMS
value)

IR open-circuit;
RL= 150 Ω;
psophometrically weighted
(P53 curve)

−−86 − dBVp

Automatic gain control (pin AGC)

∆G

vtrx

gain control range for microphone
and receiving amplifiers with
respect to I

line

=15mA

I

line

=85mA − 5.8 − dB

I

start

highest line current for maximum gain − 26 − mA

SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1997 Mar 26 14

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

I

stop

lowest line current for minimum gain − 61 − mA

DTMF amplifier (pin DTMF)

Zi input impedance − 20 − kΩ
G

vdtmf

voltage gain from DTMF to LN in
DTMF dialling or microphone MUTE
mode

V

DTMF

= 20 mV (RMS) 24.3 25.5 26.7 dB

∆G

vdtmf(f)

gain variation with frequency
referred to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vdtmf(T)

gain variation with temperature
referred to 25 °C

T

amb

= −25 to +75 °C −±0.4 − dB

G

vct

voltage gain from DTMF to QR
(confidence tone)

V

DTMF

= 20 mV (RMS);

RL= 150 Ω

−−18 − dB

Mute function (pins MUTE; TEA1112 and

MUTE; TEA1112A)

V

IL

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V

V

IH

HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V

I

MUTE

input current input level = HIGH − 1.25 3 µA

∆G

trxm

gain reduction for microphone and
receiving amplifiers in DTMF dialling
mode

− 80 − dB

SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1997 Mar 26 15

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

APPLICATION INFORMATION

a

ndbook, full pagewidth

Telephone

line

4 x

BAS11

a/b

b/a

V

DR

95 V

BZV85C10

BZX79C18

R

ast1

R

prot

130 kΩ

390 Ω

R

ast2

R

ast3

3.92 kΩ

Z

bal

C

IR

C

GAR

C

GARS

10 Ω

IR

BF473

BSN254

BC547

BC558

BC547

PD

input

R

pd4

470 kΩ

R

pd5

470 kΩ

R

pd3

1 MΩ

R

pd2

470 kΩ

R

pd6

68 kΩ

QR

GAR

MIC+

MIC−

signal

from

dial and

control

circuits

C

VCC

supply for

peripheral

circuits

RCC619 Ω

R

SLPE

R

limit

3.9 Ω

C

GAS

C

REG

20 Ω

R

pd1

470 kΩ

V

CC

DTMF

MUTE

MMUTE

I

LED

LN

SLPE GAS REG AGC

V

EE

TEA1112

TEA1112A

100 pF

100 µF

1 nF

100 pF

4.7 µF

MGD177

Fig.14 Typical application of the TEA1112; TEA1112A in sets with Pulse Dialling or Flash facilities.

1997 Mar 26 16

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

PACKAGE OUTLINES

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT38-4

92-11-17
95-01-14

M

H

c

(e )

1

M

E

A

L

seating plane

A

1

w M

b

1

b

2

e

D

A

2

Z

16

1

9

8

E

pin 1 index

b

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

UNIT

A

max.

12

b

1

(1) (1)

(1)

b

2

cD E e M

Z

H

L

mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

min.

A

max.

b

max.

w

M

E

e

1

1.73

1.30

0.53

0.38

0.36

0.23

19.50

18.55

6.48

6.20

3.60

3.05

0.2542.54 7.62

8.25

7.80

10.0

8.3

0.764.2 0.51 3.2

inches

0.068

0.051

0.021

0.015

0.014

0.009

1.25

0.85

0.049

0.033

0.77

0.73

0.26

0.24

0.14

0.12

0.010.10 0.30

0.32

0.31

0.39

0.33

0.0300.17 0.020 0.13

DIP16: plastic dual in-line package; 16 leads (300 mil)

SOT38-4

1997 Mar 26 17

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

8

9

1

16

y

pin 1 index

UNIT

A

max.

A1A2A

3

b

p

cD

(1)E(1) (1)

eHELLpQZywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

1.75

0.25

0.10

1.45

1.25

0.25

0.49

0.36

0.25

0.19

10.0

9.8

4.0

3.8

1.27

6.2

5.8

0.7

0.6

0.7

0.3

8
0

o
o

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.0

0.4

SOT109-1

95-01-23
97-05-22

076E07S MS-012AC

0.069

0.010

0.004

0.057

0.049

0.01

0.019

0.014

0.0100

0.0075

0.39

0.38

0.16

0.15

0.050

1.05

0.041

0.244

0.228

0.028

0.020

0.028

0.012

0.01

0.25

0.01 0.004

0.039

0.016

0 2.5 5 mm

scale

SO16: plastic small outline package; 16 leads; body width 3.9 mm

SOT109-1

1997 Mar 26 18

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

DIP

SOLDERING BY DIPPING OR BY WA VE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

W

AVE SOLDERING

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

R

EPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1997 Mar 26 19

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

TEA1112; TEA1112A

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1997 SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

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Tel. [phone], Fax.[phone]

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Metro MANILA, Tel.[phone],Fax. [phone]

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Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva35A, 119048 MOSCOW,

Tel. [phone], Fax.[phone]
Singapore: Lorong 1, ToaPayoh, SINGAPORE 1231,

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Slovenia: see Italy
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Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

Argentina: see South America
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Printed in The Netherlands 417027/1200/03/pp20 Date of release: 1997 Mar 26 Document order number: 9397 750 01888