Page 1
®
STTH8R03G/D
300V HYPERFAST RECTIFIER
MAJOR PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
(typ.) 4A
I
RM
8A
300 V
Tj (max) 175 °C
(max) 1.3 V
V
F
trr (max) 30 ns
FEATURES AND BENEFITS
Designed for high frequency applications.
■
■ Hyperfast recovery competes with GaAs devices.
■ Allowssizedecreaseofsnubbers and heatsinks.
DESCRIPTION
The TURBOSWITCH "R" is an ultra high
performance diode.
This TURBOSWITCH family, which drastically
cuts losses in associated MOSFET when run at
high dIF/dt, is suited for HF OFF-Line SMPS and
DC/DC converters.
K
A
K
TO-220AC
STTH8R03D
K
A
NC
D2PAK
STTH8R03G
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
February 2001 - Ed: 1H
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 140°C δ = 0.5
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
300 V
20 A
8A
80 A
- 65 + 175 °C
+ 175 °C
1/6
Page 2
STTH8R03G/D
THERMAL AND POWER DATA
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
2.5 °C/W
*
I
R
Reverse leakage
V
R=VRRM
current
V
**
F
Forward voltage drop I
= 8 A Tj = 25°C
F
Tj = 25°C
Tj = 125°C
Tj = 125°C
15 100
1.05 1.3
10 µA
1.8 V
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.9xI
F(AV)
+ 0.05 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
13 ns
30
4 5.5 A
I
trr
RM
= 0.5 A Irr= 0.25 A IR= 1A Tj = 25°C
I
F
I
=1A dIF/dt=-50A/µsVR= 30V
F
VR= 200 V IF=8A dIF/dt = - 200A/µs Tj = 125°C
S factor 0.4
TURN-ON SWITCHING CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
t
fr
Tj = 25°C IF=8A dIF/dt = 100A/µs
200 ns
measured at 1.1xVFmax
2/6
V
FP
Tj = 25°C IF=8A dIF/dt = 100A/µs
3.5 V
Page 3
STTH8R03G/D
Fig.1: Conduction losses versusaverage current
P(W)
15.0
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
12.5
10.0
δ = 1
7.5
5.0
T
2.5
0.0
IF(av) (A)
0246810
δ
=tp/T
tp
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
100
10
Tj=125°C
Typical values
Tj=125°C
Maximum values
Tj=25°C
Maximum values
VFM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence).
IRM(A)
10
VR=200V
Tj=125°C
8
6
4
2
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
IF= 2 x IF(av)
IF=IF(av)
IF= 0.5 x IF(av)
Fig. 5: Reverse recovery time versus dIF/dt
(90% confidence).
trr(ns)
80
70
60
50
40
IF=2 x IF(av)
IF=IF(av)
30
20
IF=0.5 x IF(av)
10
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
VR=200V
Tj=125°C
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
Qrr(nC)
140
VR=200V
Tj=125°C
120
100
80
60
40
20
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
3/6
Page 4
STTH8R03G/D
Fig. 7: Softness factor (tb/ta) versus dIF/dt
(typical values).
S factor
0.6
0.5
0.4
0.3
0.2
0.1
dIF/dt(A/µs)
0.0
0 50 100 150 200 250 300 350 400 450 500
IF < 2 x IF(av)
VR=200V
Tj=125°C
Fig. 9: Transient peak forward voltage versus
dIF/dt (90% confidence).
VFP(V)
10
IF=IF(av)
9
Tj=125°C
8
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Fig. 8: Relative variation of dynamic
parameters versus junction temperature
(Reference: Tj=125°C).
2.6
2.4
2.2
2.0
S factor
1.8
1.6
1.4
1.2
1.0
0.8
0.6
IRM
0.4
0.2
0.0
25 50 75 100 125
Tj(°C)
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
tfr(ns)
300
250
200
150
100
50
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
VFR=1.1 x VF max.
IF=IF(av)
Tj=125°C
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm)(D
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40
4/6
S(cm²)
2
D²PAK
PAK)
Page 5
PACKAGE MECHANICAL DATA
2
PAK
D
STTH8R03G/D
L2
L
L3
FOOTPRINT
A
E
C2
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
DIMENSIONS
D
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
A1
B2
B
G
C
A2
R
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
M
*
V2
* FLAT ZONE NO LESSTHAN 2mm
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°
10.30
16.90
5.08
1.30
3.70
8.90
5/6
Page 6
STTH8R03G/D
PACKAGE MECHANICAL DATA
TO-220AC
H2
L5
Ø I
L6
L2
L9
F1
L4
F
G
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A
C
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
L7
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
L4 13.00 14.00 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
Ordering code Marking Package Weight Base qty Delivery mode
STTH8R03D STTH8R03D TO-220AC 1.86g 50 Tube
STTH8R03G STTH8R03G D
STTH8R03G-TR STTH8R03G D
■
Cooling method: by conduction (C)
■
Recommended torque value (TO-220AC): 0.55 N.m.
■
Maximum torque value (TO-220AC): 0.7 N.m.
■
Epoxy meets UL 94,V0
Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof
useofsuchinformation nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
6/6
2
PAK 1.48g 50 Tube
2
PAK 1.48g 1000 Tape & Reel
http://www.st.com
Loading...