Datasheet STHH2003CR Datasheet (SGS Thomson Microelectronics)

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STTH2003CT/CG/CF/CR/CFP

August 2003 - Ed: 7D

HIGH FREQUENCY SECONDARY RECTIFIER

®

Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC/DC converters.

Packaged in TO-220AB, ISOWATT220AB,
TO-220FPAB, I

2

PAK or D2PAK, this device is

especially intended for secondary rectification.

DESCRIPTION

■

COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE

■ ULTRA-FAST,SOFT AND NOISE-FREE

RECOVERY

■

INSULATED PACKAGES: ISOWATT220AB,
TO-220FPAB
Electric insulation: 2000VDC
Capacitance: 12pF

FEATURES AND BENEFITS

Symbol Parameter Value Unit

V

RRM

Repetitive peak reverse voltage

300 V

I

F(RMS)

RMS forward current

30 A

I

F(AV)

Average forward
current δ = 0.5

TO-220AB / D2PAK /
I2PAK

Tc=140°C Per diode

Per device

10
20

A

ISOWATT220AB

Tc=125°C

TO-220FPAB

Tc=115°C

I

FSM

Surge non repetitive forward current tp = 10 ms sinusoidal

110 A

I

RSM

Non repetitive avalanche current tp = 20 µs square

5A

T

stg

Storage temperature range

-65 + 175 °C

Tj

Maximum operating junction temperature

175 °C

ABSOLUTE RATINGS (limiting values, per diode)

A1

A2

K

I

F(AV)

2x10A

V

RRM

300 V

Tj (max) 175 °C

V

F

(max) 1 V

trr (max) 35 ns

MAJOR PRODUCT CHARACTERISTICS

A1

A2

K

D2PAK

STTH2003CG

A1

A2

K

TO-220AB

STTH2003CT

A1

A2

K

ISOWATT220AB

STTH2003CF

A1

A2

K

I2PAK

STTH2003CR

A1

A2

K

TO-220FPAB

STTH2003CFP

STTH2003CT/CG/CF/CR/CFP

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Symbol Parameter Tests conditions Min. Typ. Max. Unit

I

R

*

Reverse leakage
current

V

R

= 300 V Tj = 25°C

20 µA

Tj = 125°C

30 300

V

F

**

Forward voltage drop I

F

= 10 A Tj = 25°C

1.25 V

Tj = 125°C

0.85 1

Pulse test : * tp=5ms,δ<2%

** tp = 380 µs, δ <2%

To evaluate the maximum conduction losses use the following equation :
P=0.75xI

F(AV)

+ 0.025 I

F2(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Value Unit

R

th (j-c)

Junction to case TO-220AB / D2PAK / I2PAK

Per diode 2.5 °C/W

Total 1.3

ISOWATT220AB

Per diode 3.9

Total 3.2

TO-220FPAB

Per diode 4.6

Total 4

R

th (c)

TO-220AB / D2PAK / I2PAK

Coupling 0.1

ISOWATT220AB

Coupling 2.5

TO-220FPAB

Coupling 3.5

THERMAL RESISTANCES

Symbol Tests conditions Min. Typ. Max. Unit

trr

I

F

= 0.5 A Irr= 0.25 A IR=1A Tj=25°C

25 ns

I

F

=1A dIF/dt=-50A/µsVR=30V

35

tfr

I

F

=10A dIF/dt = 100 A/µs

VFR=1.1xVFmax.

Tj=25°C

230 ns

V

FP

3.5 V

S

factor

Vcc = 200V IF=10A
dIF/dt = 200 A/µs

Tj = 125°C

0.3 -

I

RM

8A

RECOVERY CHARACTERISTICS

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STTH2003CT/CG/CF/CR/CFP

024681012

0

2

4

6

8

10

12

14

IF(av) (A)

P1(W)

T

δ

=tp/T

tp

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

Fig. 1: Conduction losses versus average current
(per diode).

0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00

1

10

100

200

VFM(V)

IFM(A)

Tj=125°C

Tj=25°C

Tj=75°C

Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).

1E-3 1E-2 1E-1 1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

T

δ

=tp/T

tp

Single pulse

δ = 0.5

δ = 0.2
δ = 0.1

Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB
/D

2

PAK/I2PAK).

0 50 100 150 200 250 300 350 400 450 500

0

20

40

60

80

100

trr(ns)

VR=200V
Tj=125°C

IF=2*IF(av)

IF=IF(av)

IF=0.5*IF(av)

dIF/dt(A/µs)

Fig. 5: Reverse recovery time versus dIF/dt (90%

confidence, per diode).

0 50 100 150 200 250 300 350 400 450 500

0

2

4

6

8

10

12

14

16

dIF/dt(A/µs)

IRM(A)

VR=200V
Tj=125°C

IF=2*IF(av)

IF=IF(av)

IF=0.5*IF(av)

Fig. 4: Peak reverse recovery current versus
dI

F

/dt (90% confidence, per diode).

1E-2 1E-1 1E+0 1E+1

0.0

0.2

0.4

0.6

0.8

1.0

Zth(j-c)/Rth(j-c)

tp(s)

T

δ

=tp/T

tp

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB).

4/8

STTH2003CT/CG/CF/CR/CFP

25 50 75 100 125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

Tj(°C)

IRM

S factor

Fig. 7: Relative variation of dynamic parameters
versusjunction temperature (reference:Tj = 125°C).

0 50 100 150 200 250 300 350 400 450 500

0

2

4

6

8

10

V (V)FP

IF=IF(av)
Tj=125°C

dIF/dt(A/µs)

Fig. 8: Transient peak forward voltage versus

dI

F

/dt (90% confidence, per diode) (TO-220AB).

0 50 100 150 200 250 300 350 400 450 500

0

100

200

300

400

500

t (ns)fr

VFR=1.1*VF max.
IF=IF(av)
Tj=125°C

dIF/dt(A/µs)

Fig. 9: Forward recovery time versus dIF/dt (90%

confidence, per diode).

0 5 10 15 20 25 30 35 40

0

10

20

30

40

50

60

70

80

Rth(j-a) (°C/W)

S(Cu) (cm²)

Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm)
(D

2

PAK).

0 50 100 150 200 250 300 350 400 450 500

0.00

0.10

0.20

0.30

0.40

0.50

0.60

S factor

VR=200V
Tj=125°C

dIF/dt(A/µs)

Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical

values, per diode).

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STTH2003CT/CG/CF/CR/CFP

PACKAGE MECHANICAL DATA

D

2

PAK

A

C2

D

R

A2

M

V2

C

A1

G

L

L3

L2

B

B2

E

*

* FLAT ZONE NO LESS THAN 2mm

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126

R 0.40 typ. 0.016typ.

V2 0° 8° 0° 8°

8.90

3.70

1.30

5.08

16.90

10.30

FOOT PRINT DIMENSIONS (in millimeters)

D

2

PAK

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STTH2003CT/CG/CF/CR/CFP

PACKAGE MECHANICAL DATA

ISOWATT220AB

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

B 2.50 2.70 0.098 0.106
D 2.50 2.75 0.098 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039

F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

G1 2.40 2.70 0.094 0.106

H 10.00 10.40 0.394 0.409

L2 16.00typ. 0.630 typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366

Diam 3.00 3.20 0.118 0.126

PACKAGE MECHANICAL DATA

TO-220AB

A

C

D

L7

Dia

L5

L6

L9

L4

F

H2

G

G1

L2

F2
F1

E

M

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409

L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102typ.

Diam. 3.75 3.85 0.147 0.151

STTH2003CT/CG/CF/CR/CFP

7/8

PACKAGE MECHANICAL DATA

TO-220FPAB

H

L3

L2

L4

L6

G

G1

F

F1

L5

D

E

L7

A

B

Dia

F2

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.70 0.018 0.027

F 0.75 1 0.030 0.039

F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142

L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366

Dia. 3.00 3.20 0.118 0.126

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STTH2003CT/CG/CF/CR/CFP

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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

© 2003 STMicroelectronics - Printed in Italy - All rights reserved.

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PACKAGE MECHANICAL DATA

I

2

PAK

e

D

L

L1

L2

b1

b

b2

E

A

c2

A1

c

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

A1 2.49 2.69 0.098 0.106

b 0.70 0.93 0.028 0.037

b1 1.14 1.17 0.044 0.046
b2 1.14 1.17 0.044 0.046

c 0.45 0.60 0.018 0.024

c2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368

e 2.40 2.70 0.094 0.106

E 10.0 10.4 0.394 0.409

L 13.1 13.6 0.516 0.535

L1 3.48 3.78 0.137 0.149
L2 1.27 1.40 0.050 0.055

Ordering code Marking Package Weight Base qty

Delivery

mode

STTH2003CT STTH2003CT TO-220AB 2.2 g 50 Tube

STTH2003CG STTH2003CG D

2

PAK 1.48 g 50 Tube

STTH2003CG-TR STTH2003CG D2PAK 1.48 g 500 Tape & reel

STTH2003CF STTH2003CF ISOWATT220AB 2.08 g 50 Tube

STTH2003CFP STTH2003CFP TO-220FPAB 2.08 g 50 Tube

STTH2003CR STTH2003CR I

2

PAK 1.49 g 50 Tube

■

Cooling method: by conduction (C)

■

Recommended torque value: 0.55 N.m.

■

Maximum torque value: 0.70 N.m.

■

Epoxy meets UL 94,V0