Datasheet STH6N100FI, STH6N100 Datasheet (SGS Thomson Microelectronics)

STH6N100

STH6N100FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

STH6N100
STH6N100FI

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW INPUT CAPACITANCE

■ LOW GATE CHARGE

■ APPLICATION ORIENTED

DS(on)

DSS

1000 V
1000 V

= 1.75 Ω

R

DS(on)

<2Ω
<2Ω

I

D

6A

3.7 A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWERSUPPLIES (SMPS)

■ CONSUMER AND INDUSTRIAL LIGHTING

■ DC-AC INVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)

3

2

1

1

TO-218 ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

3

2

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

ST H6N100 STH6N100

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

December 1996

Drain - s ource Voltage (VGS= 0) 1000 V

DS

Drain- gate Voltage (RGS=20kΩ) 1000 V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC63.7A

I

D

Drain Current (continuous) at Tc=100oC3.7 2.3A

I

D

(•) Drain Current (pulsed) 24 24 A

Total Di ssipation at Tc=25oC 180 70 W

tot

Derat ing Factor 1.44 0.56 W/
Ins ulation Withs t and Voltage (DC)  4000 V

ISO

St or a ge Tem perature -65 to 150

stg

Max. Operating Junction Temperature 150

T

j

o
o

o

C

C
C

1/10

STH6N100/FI

THERMAL DATA

TO-218 ISOW ATT 218

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e M ax 0.69 1.78
Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive

(Tc= 100oC, pulse width limited by Tjmax, δ <1%)

30

0.1

300

6A

850 mJ

16 mJ

3.7 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condi tions Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 1000 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Volt age
Drain Current (VGS=0)

Gat e- body Leak age
Current (V

DS

=0)

VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC

= ± 20 V ± 100 nA

V

GS

25

250

ON (∗)

Symbol Parameter Test Condi tions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n

VGS=10V ID=3A 1.75 2 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

6A

VGS=10V

DYNAMIC

Symbol Parameter Test Condi tions Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=3A 4 5.5 S

VDS=25V f=1MHz VGS= 0 2150

260
105

2800

330
130

µA
µA

pF
pF
pF

2/10

STH6N100/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condi tions Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T im e

t

Rise Time

r

Turn-on C urrent S lope VDD=800V ID=6A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Condi tions Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=500V ID=3A
RG=50 Ω VGS=10V

70

21090280

(see test circuit, figure 3)

180 A/µs
RG=50Ω VGS=10V
(see test circuit, figure 5)

VDD= 400 V ID=6A VGS=10V 125

15
55

VDD=800V ID=6A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

190

50

265

150 nC

250

65

345

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condi tions Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

6

24

(pulsed)

V

(∗) F or ward O n Voltage ISD=6A VGS=0 2 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD=6A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

1100

31

Charge

I

RRM

Reverse Recovery

57

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-218 Safe Operating Areas For ISOWATT218

A
A

ns

µC

A

3/10

STH6N100/FI

Thermal ImpedeanceFor TO-218

Derating Curve For TO-218

Thermal Impedance For ISOWATT218

Derating Curve For ISOWATT218

Output Characteristics

4/10

Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-sourceVoltage Capacitance Variations

STH6N100/FI

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/10

STH6N100/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode ForwardCharacteristics

6/10

STH6N100/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/10

STH6N100/FI

TO-218 (SOT-93) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030

F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598

L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220

R – 12.2 – 0.480

Ø 4 4.1 0.157 0.161

mm inch

E

A

C

L5

D

L6

L3

L2

H

G

Ø

F

R

123

P025A

8/10

ISOWATT218 MECHANICAL DATA

STH6N100/FI

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122

D1 1.88 2.08 0.074 0.081

E 0.45 1 0.017 0.039

F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637

L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817

M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181

L3

N

E

A

D

C

L5

M

H

L2

L6

L1

D1

L4

F

U

G

123

P025C

9/10

STH6N100/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rights of third parties which mayresults fromits use. No
licenseis granted by implication orotherwise under any patentor patentrights of SGS-THOMSONMicroelectronics. Specifications mentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronicsproducts are notauthorized for use ascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.

 1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved

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