Datasheet STH60N10 Datasheet (SGS Thomson Microelectronics)

STH60N10/FI

STW60N10

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

STH 60N10
STH 60N10FI
STW60N10

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ VERY HIGH CURRENT CAPABILITY

o

■ 175

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

DS(on)

DSS

100 V
100 V
100 V

= 0.02 Ω

R

DS(on)

< 0.025 Ω
< 0.025 Ω
< 0.025 Ω

I

D

60 A
36 A
60 A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

TO-247

3

2

1

3

2

TO-218 ISOWATT218

1

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STH/STW60N10 STH6 0N10FI

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

May 1993

Drain - s ource Voltage (VGS=0) 100 V

DS

Drain- gate Voltage (RGS=20kΩ)100V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC6036A

I

D

Drain Current (continuous) at Tc=100oC42 22A

I

D

(•) Drain Current (pulsed) 240 240 A

Total Di ssipation at Tc=25oC 200 70 W

tot

Derat ing Factor 1.33 0.56 W/
Ins ulation Withs t and Voltage (DC)  4000 V

ISO

St or a ge Tem perature -65 to 175 -65 to 1 50

stg

Max. Operating Junction Temperature 175 1 50

T

j

o
o

o

C

C
C

1/11

STH60N10/FI STW60N10

THERMAL DATA

TO - 218/ TO-247 IS OWATT218

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e Max 0.75 1.79
Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive

(Tc= 100oC, pulse width limited by Tjmax, δ <1%)

30

0.1

300

60 A

720 mJ

180 mJ

37 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 100 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Volt age
Drain Current (VGS=0)

Gat e- body Leak age
Current (V

DS

=0)

VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC

= ± 20 V ± 100 nA

V

GS

250

1000µAµA

ON (∗)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID=250µA22.94V
St at ic Drain-s our ce O n

Resistance
On State Drain Current VDS>I

VGS=10V ID=30A
VGS=10V ID=30A Tc= 100oC

D(on)xRDS(on)max

0.02 0.025

0.05

60 A

VGS=10V

DYNAMIC

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=30A 25 35 S

VDS=25V f=1MHz VGS= 0 4000

1100

250

5000
1400

350

Ω
Ω

pF
pF
pF

2/11

STH60N10/FI STW60N10

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T im e

t

Rise Time

r

Turn-on C urrent S lope VDD=80V ID=60A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=80V ID=30A
RG=50 Ω VGS=10V

90

270

(see test circuit, figure 3)

270 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD=80V ID=30A VGS=10V 120

16
60

VDD=80V ID=60A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

200

210

410

130
380

170 nC

280
290
570

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

60

240

(pulsed)

V

(∗) Forward On Volt age ISD=60A VGS=0 1.6 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 60 A di/dt = 100 A/µs
VDD=30V Tj=150oC
(see test circuit, figure 5)

180

1

Charge

I

RRM

Reverse Recovery

11

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218

A
A

ns

µC

A

3/11

STH60N10/FI STW60N10

Thermal ImpedeanceFor TO-218 and TO-247

Derating Curve For TO-218 and TO-247

Thermal Impedance For ISOWATT218

Derating Curve For ISOWATT218

Output Characteristics

4/11

Transfer Characteristics

STH60N10/FI STW60N10

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-sourceVoltage Capacitance Variations

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/11

STH60N10/FI STW60N10

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode ForwardCharacteristics

6/11

STH60N10/FI STW60N10

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/11

STH60N10/FI STW60N10

TO-247 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.208
A1 2.87 0.113
A2 1.5 2.5 0.059 0.098

b 1 1.4 0.039 0.055
b1 2.25 0.088
b2 3.05 3.43 0.120 0.135

C 0.4 0.8 0.015 0.031
D 20.4 21.18 0.803 0.833

e 5.43 5.47 0.213 0.215

E 15.3 15.95 0.602 0.628

L 15.57 0.613
L1 3.7 4.3 0.145 0.169

Q 5.3 5.84 0.208 0.230

ØP 3.5 3.71 0.137 0.146

mm inch

8/11

C

A

b1

A1

b

e

b2

A2

Q

D

L1

L

ø

E

STH60N10/FI STW60N10

TO-218 (SOT-93) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098

E 0.5 0.78 0.019 0.030

F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598

L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220

R – 12.2 – 0.480

Ø 4 4.1 0.157 0.161

mm inch

E

A

C

L5

D

L6

L3

L2

H

G

Ø

F

R

123

P025A

9/11

STH60N10/FI STW60N10

ISOWATT218 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122

D1 1.88 2.08 0.074 0.081

E 0.45 1 0.017 0.039

F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637

L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817

M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181

L3

N

E

A

D

C

L5

M

H

L2

L6

L1

D1

L4

F

U

G

123

P025C

10/11

STH60N10/FI STW60N10

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consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
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in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
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written approvalof SGS-THOMSON Microelectonics.

 1994 SGS-THOMSONMicroelectronics - All Rights Reserved

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11/11