Datasheet NTGS3441T1 Datasheet (ON Semiconductor)

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NTGS3441T1

Power MOSFET
1 Amp, 20 Volts

P−Channel TSOP−6

Features

• Ultra Low R

DS(on)

• Higher Efficiency Extending Battery Life

• Miniature TSOP−6 Surface Mount Package

• Pb−Free Package is Available

Applications

• Power Management in Portable and Battery−Powered Products, i.e.:

Cellular and Cordless T elephones, and PCMCIA Cards

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Thermal Resistance

Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
Drain Current − Continuous @ T

− Pulsed Drain Current (T

Thermal Resistance

Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
Drain Current − Continuous @ T

− Pulsed Drain Current (T

Thermal Resistance

Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
Drain Current − Continuous @ T

− Pulsed Drain Current (T
Operating and Storage Temperature Range TJ, T
Maximum Lead Temperature for Soldering

Purposes for 10 Seconds

1. Minimum FR−4 or G−10PCB, operating to steady state.

2. Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), operating to steady state.

3. Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single
sided), t  5.0 seconds.

= 25°C unless otherwise noted)

J

Rating

= 25°C

A

= 25°C

A

 10 S)

p

= 25°C

A

= 25°C

A

 10 S)

p

= 25°C

A

= 25°C

A

 10 S)

p

Symbol Value Unit

−20 V

8.0 V

244

0.5

−1.65

−10

128

1.0

−2.35

−14

62.5

2.0

−3.3

−20

−55 to 150 °C
260 °C

°C/W

W

°C/W

W

°C/W

W

A
A

A
A

A
A

R

R

R

DSS

P
I

I

DM

P
I

I

DM

P
I

I

DM

T

GS







JA
d

D

JA
d

D

JA
d

D

stg

L

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1 AMPERE

20 VOLTS

R

DS(on)

3

1

PT = Device Code
W = Work Week

PIN ASSIGNMENT

= 90 m

P−Channel

1256

4

TSOP−6

CASE 318G

STYLE 1

Source

DrainDrain

4

56

321

GateDrain

Drain

MARKING
DIAGRAM

PT

W

1

 Semiconductor Components Industries, LLC, 2004

April, 2004 − Rev. 4

ORDERING INFORMATION

Device Package Shipping

NTGS3441T1 TSOP−6 3000 / Tape & Reel
NTGS3441T1G TSOP−6

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1 Publication Order Number:

3000 / Tape& Reel

NTGS3441T1/D

†

NTGS3441T1

)

f = 1.0 MHz)

(

(V

DD

−20 Vdc, I

D

Adc

)

I

D

Adc)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Notes 4 & 5)

A

Characteristic

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

= 0 Vdc, ID = −10 A)

(V

GS

Zero Gate Voltage Drain Current

(VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C)
(V

= 0 Vdc, VDS = −20 Vdc, TJ = 70°C)

GS

Gate−Body Leakage Current

(VGS = −8.0 Vdc, VDS = 0 Vdc)

Gate−Body Leakage Current

(VGS = +8.0 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS

Gate Threshold Voltage

= VGS, ID = −250 Adc)

(V

DS

Static Drain−Source On−State Resistance

(VGS = −4.5 Vdc, ID = −3.3 Adc)
(V

= −2.5 Vdc, ID = −2.9 Adc)

GS

Forward Transconductance

(VDS = −10 Vdc, ID = −3.3 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

(VDS = −5.0 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn−On Delay Time
Rise Time
Turn−Off Delay Time

V

= −20 Vdc, I

=

= −1.6 Adc,

= −1.6

VGS = −4.5 Vdc, Rg = 6.0 )

,

Fall Time t
Total Gate Charge Q
Gate−Source Charge

(VDS = −10 Vdc, VGS = −4.5 Vdc,

= −3.3

I

= −3.3 Adc

Gate−Drain Charge

BODY−DRAIN DIODE RATINGS

Diode Forward On−Voltage (IS = −1.6 Adc, VGS = 0 Vdc) V
Diode Forward On−Voltage (IS = −3.3 Adc, VGS = 0 Vdc) V
Reverse Recovery Time (IS = −1.6 Adc, dIS/dt = 100 A/s) t

4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%.

5. Handling precautions to protect against electrostatic discharge is mandatory.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

I

GSS

V

GS(th)

R

DS(on)

g

C
C
C

t

d(on)

t

d(off)

Q

Q

−20 − −

−

−

− − −100

− − 100

−0.45 −1.05 −1.50

−

−

FS

iss
oss
rss

− 6.8 −

− 480 − pF

− 265 − pF

− 100 − pF

− 13 25 ns

t

r

− 23.5 45 ns

− 27 50 ns

f
tot
gs
gd

SD
SD

rr

− 24 45 ns

− 6.2 14 nC

− 1.3 − nC

− 2.5 − nC

− −0.88 −1.2 Vdc

− −0.98 − Vdc

− 30 60 ns

−

−

0.069

0.117

−1.0

−5.0

0.090

0.135

Vdc

Adc

nAdc

nAdc

Vdc

mhos



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2

NTGS3441T1

TYPICAL ELECTRICAL CHARACTERISTICS

10

TJ = 25°C

8

6

4

DRAIN CURRENT (AMPS)

2

D,

−I

0

0

−V

DS

VGS = −10 V

0.4

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.4

0.3

0.2

DRAIN−TO−SOURCE

RESISTANCE ()

0.1

DS(on),

R

VGS = −3.5 V

VGS = −4 V

VGS = −4.5 V

VGS = −6 V

VGS = −2.7 V

VGS = −3 V

VGS = −2.5 V

VGS = −2 V

VGS = −1.5 V

1.6

ID = −3.3 A
T

= 25°C

J

20

VDS> = −10 V

TJ = 25°C

16

TJ = −55°C

12

TJ = 100°C

8

DRAIN CURRENT (AMPS)

4

D,

−I

21.20.8

0

0.4

0.8

2 2.41.61.2 2.8

3.2 3.6 4

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.28
TJ = 25°C

0.24

0.2

0.16

0.12

0.08

0.04

VGS = −2.5 V

VGS = −4.5 V

0

25

36

47

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

ID = −3.3 A

1.4
V

GS

= −4.5 V

1.2

1

DRAIN−TO−SOURCE

0.8

DS(on),

R

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

50 125100

75 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0

DRAIN−TO−SOURCE RESISTANCE ()

8

016

DS(on),

R

Figure 4. On−Resistance vs. Drain Current and

4

−ID, DRAIN CURRENT (AMPS)

20128

Gate Voltage

100

VGS = 0 V

TJ = 125°C

10

TJ = 100°C

LEAKAGE (nA)

DSS,

−I

1

TJ = 25°C

0.1
016

4

−V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS

20128

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

http://onsemi.com

3

1200

900

NTGS3441T1

TYPICAL ELECTRICAL CHARACTERISTICS

TJ = 25°CVDS = 0 V VGS = 0 V

C

iss

8

6

C

600

300

C, CAPACITANCE (pF)

rss

C

iss

C

oss

C

rss

0

88124016

−V

4

GS

−V

DS

20

GATE−TO−SOURCE VOLTAGE

GS,

−V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1.3

1.2

ID = −250 A

1.1

1

0.9

(NORMALIZED)

0.8

GATE THRESHOLD VOLTAGE

0.7

GS(th),

V

0.6

−50 50

0 100

25−25 75 125

SOURCE CURRENT (AMPS)

S,

−I

150

TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Gate Threshold Voltage Variation

with Temperature

QT

4

(VOLTS)

Q

gs

Q

gd

VDD = −20 V
I

2

= −3.3 A

D

= 25°C

T

J

0

04

26

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VGS = 0 V
T

= 25°C

J

8

6

4

2

0

0.5 0.91010.80.7 1.1

0.6

−V

SOURCE−TO−DRAIN VOLTAGE (VOLTS)

SD,

1.2 1.3 1.4

Figure 10. Diode Forward Voltage vs. Current

8

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4

1

Duty Cycle = 0.5

NTGS3441T1

TYPICAL ELECTRICAL CHARACTERISTICS

20

16

12

8

POWER (W)

4

0

0.01 1.000.10 10.00
TIME (sec)

Figure 11. Single Pulse Power

100.00

0.2

0.1

0.1

0.05

THERMAL IMPEDANCE

0.01

NORMALIZED EFFECTIVE TRANSIENT

0.02

0.01

1E−04 1E+00

1E−03

Single Pulse

SQUARE WAVE PULSE DURATION (sec)

Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient

1E+011E−011E−02

1E+02 1E+03

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5

0.05 (0.002)

NTGS3441T1

PACKAGE DIMENSIONS

TSOP−6

CASE 318G−02

ISSUE L

NOTES:

1. DIMENSIONING AND TOLERANCING PER

A

L

456

S

1

23

B

D

G

M

C

H

K

J

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.

DIM MIN MAX MIN MAX

A 0.1142 0.12202.90 3.10
B 0.0512 0.06691.30 1.70
C 0.0354 0.04330.90 1.10
D 0.0098 0.01970.25 0.50
G 0.0335 0.04130.85 1.05
H 0.0005 0.00400.013 0.100
J 0.0040 0.01020.10 0.26
K 0.0079 0.02360.20 0.60
L 0.0493 0.06101.25 1.55
M 0 10 0 10



S 0.0985 0.11812.50 3.00

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

INCHESMILLIMETERS

SOLDERING FOOTPRINT*

2.4

0.094

0.95

0.037

1.9

0.075

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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0.95

0.037

0.7

0.028

1.0

0.039

SCALE 10:1



inches

mm

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.



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NTGS3441T1/D