Datasheet NTF5P03T3 Datasheet (ON Semiconductor)

NTF5P03T3

l

s

l

Preferred Device

Power MOSFET

5.2 Amps, 30 Volts

P−Channel SOT−223

Features

• Ultra Low R

DS(on)

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Miniature SOT−223 Surface Mount Package

• Avalanche Energy Specified

• Pb−Free Package is Available

Applications

• DC−DC Converters

• Power Management

• Motor Controls

• Inductive Loads

• Replaces MMFT5P03HD

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5.2 AMPERES, 30 VOLTS
= 100 mW

S

D

P−Channel MOSFET

MARKING

4

DIAGRAM

& PIN

ASSIGNMENT

Drain

AYM
5P03 G

1

2

SOT−223

CASE 318E

STYLE 3

3

R

DS(on)

G

4

G

© Semiconductor Components Industries, LLC, 2006

December, 2006 − Rev. 3

1

Gate2Drain3Source

A = Assembly Location
Y = Year
M = Date Code
5P03 = Specific Device Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

NTF5P03T3 SOT−223 4000/Tape & Ree
NTF5P03T3G

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

Preferred devices are recommended choices for future use
and best overall value.

1

SOT−223

(Pb−Free)

Publication Order Number:

4000/Tape & Ree

NTF5P03T3/D

†

NTF5P03T3

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

J

Negative sign for P−Channel devices omitted for clarity

Rating

Drain−to−Source Voltage V
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage − Continuous V

1 sq in
FR−4 or G−10 PCB

10 seconds

Thermal Resistance − Junction to Ambient
Total Power Dissipation @ T
Linear Derating Factor
Drain Current − Continuous @ T
Continuous @ TA = 70°C

= 25°C

A

A

= 25°C

Pulsed Drain Current (Note 1)

Minimum
FR−4 or G−10 PCB

Thermal Resistance − Junction to Ambient

Total Power Dissipation @ T

= 25°C

A

Linear Derating Factor

10 seconds

Drain Current − Continuous @ T
Continuous @ T

= 70°C

A

= 25°C

A

Pulsed Drain Current (Note 1)
Operating and Storage Temperature Range TJ, T
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

(V

= −30 Vdc, VGS = −10 Vdc, Peak IL = −12 Apk, L = 3.5 mH, RG = 25 W)

DD

Symbol Max Unit

−30 V

−30 V

± 20 V

40

3.13
25

°C/W

Watts

mW/°C

−5.2

−4.1

−26
80

1.56

12.5

°C/W

Watts

mW/°C

−3.7

−2.9

−19

− 55 to 150 °C
mJ

250

A
A
A

A
A
A

V

R

R

DSS
DGR

GS

THJA

P

I

D

I

D

I

DM

THJA

P

I

D

I

D

I

DM

E

AS

D

D

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Opera t i n g Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. Repetitive rating; pulse width limited by maximum junction temperature.

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2

NTF5P03T3

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 and 4)

(V

= 0 Vdc, ID = −0.25 mAdc)

GS

Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current

(VDS = −24 Vdc, VGS = 0 Vdc)
(VDS = −24 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate−Body Leakage Current

(V

= ± 20 Vdc, VDS = 0 Vdc)

GS

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = −0.25 mAdc)

Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Notes 2 and 4)

(V

= −10 Vdc, ID = −5.2 Adc)

GS

(VGS = −4.5 Vdc, ID = −2.6Adc)

Forward Transconductance (Note 2)

(V

= −15 Vdc, ID = −2.0 Adc)

DS

(Cpk ≥ 2.0) (Notes 2 and 4)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance C

(VDS = −25 Vdc, V

f = 1.0 MHz)

Transfer Capacitance C

GS

= 0 V,

SWITCHING CHARACTERISTICS (Note 3)

(V

Turn−On Delay Time
Rise Time t

= −15 Vdc, ID = −4.0 Adc,

DD

V

= −10 Vdc,

GS

= 6.0 W) (Note 2)

R

G

Turn−Off Delay Time t
Fall Time t

(V

Turn−On Delay Time
Rise Time t

= −15 Vdc, ID = −2.0 Adc,

DD

V

= −10 Vdc,

GS

= 6.0 W) (Note 2)

R

G

Turn−Off Delay Time t
Fall Time t
Gate Charge (VDS = −24 Vdc, ID = −4.0 Adc,

V

= −10 Vdc) (Note 2)

GS

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (IS = −4.0 Adc, VGS = 0 Vdc)

Reverse Recovery Time (IS = −4.0 Adc, VGS = 0 Vdc,

Reverse Recovery Stored Charge Q

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

3. Switching characteristics are independent of operating junction temperatures.

4. Reflects typical values.
Cpk +

Ť

(I

= −4.0 Adc, VGS = 0 Vdc,

S

TJ = 125°C) (Note 2)

dIS/dt = 100 A/ms) (Note 2)

Max limit * Typ

3 SIGMA

Ť

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

g

C

t

d(on)

d(off)

t

d(on)

d(off)

Q

Q
Q

fs

iss

oss

rss

r

f

r

f

−30

−

−

−

−

−28

−

−

−

−

−1.0

−25

− − ± 100 nAdc

−1.0

−

− 76

−1.75

3.5

107

−3.0

−

100
150

2.0 3.9 − Mhos

− 500 950

− 153 440

− 58 140

− 10 24

− 33 48

− 38 94

− 20 92

− 16 38

− 45 110

− 23 60

− 24 80

T
1
2

− 15 38

− 1.6 −

− 3.5 −

Vdc

mV/°C

mAdc

Vdc

mV/°C

mW

pF

ns

ns

nC

Q3 − 2.6 −

V

t
t
t

SD

rr
a
b

RR

−

−

−1.1

−0.89

−1.5

− 34 −

− 20 −

− 14 −

− 0.036 −

−

Vdc

ns

mC

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3

10

0

−I

DRAIN CURRENT (AMPS)

5

4

VGS = −8.0 V

3

VGS = −10 V

TJ = 25°C

2

D,

1

0

0

0.100

0.075

NTF5P03T3

TYPICAL ELECTRICAL CHARACTERISTICS

VGS = −4.3 V
VGS = −4.5 V

VGS = −6.0 V

VGS = −4.1 V

VGS = −3.9 V

8

6

VGS = −3.7 V

4

VGS = −3.5 V

0.9

−V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

1.20.60.3

VGS = −3.3 V
VGS = −3.1 V

VGS = −2.7 V

1.5 1.8

DRAIN CURRENT (AMPS)

2

D,

−I
0

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.20

ID = −4.0 A
T

= 25°C

J

0.15

V

≥ −10 V

DS

TJ = 25°C

TJ = 100°C

TJ = −55°C

363.5 54 4.5 5.5

−V

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

TJ = 25°C

VGS = −4.5 V

0.050

0.025

DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on),

R

0

13

GATE−TO−SOURCE VOLTAGE (VOLTS)

−V

GS,

Figure 3. On−Resistance versus

Gate−to−Source V oltage

1.6
ID = −2.0 A
V

= −10 V

GS

1.4

1.2

1

(NORMALIZED)

0.8

DRAIN−TO−SOURCE RESISTANCE

0.6

−50 50250−25 75 125100

DS(on),

R

T

, JUNCTION TEMPERATURE (°C)

J

Figure 5. On−Resistance Variation with

Temperature

0.10
VGS = −10 V

0.05

DRAIN−TO−SOURCE RESISTANCE (W)

DS(on),

R

0

0

1

4653

−ID, DRAIN CURRENT (AMPS)

42

52

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

100

VGS = 0 V

TJ = 125°C

10

, LEAKAGE (nA)

150

DSS

−I

1

0253

−V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

TJ = 100°C

2010 15

Figure 6. Drain−to−Source Leakage Current

versus Voltage

78

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4

NTF5P03T3

C, CAPACITANCE (pF)

t, TIME (ns)

−I

, DRAIN CURRENT (AMPS)

0

0

DS

TYPICAL ELECTRICAL CHARACTERISTICS

6000

5000

VDS = 0 V

C

iss

VGS = 0 V

TJ = 25°C

12.5

10

−V

DS

4000

C

rss

7.5

3000

C

iss

2000

C

oss

1000

C

rss

0

−V

10 1002030

GS

−V

DS

5.0

Q

1

2.5

, GATE−TO−SOURCE VOLTAGE (V)

GS

0

−V

0504020 60

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

(VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source V oltage versus Total Charge

1000

100

VDD = −15 V
I

= −4.0 A

D

= −10 V

V

GS

t

d(off)

t

f

t

r

3

2

1

VGS = 0 V
T

J

= 25°C

Q

T

Q

2

3010

Q

, TOTAL GATE CHARGE (nC)

g

−V

GS

ID = −2 A
T

= 25°C

J

25

20

15

10

5

0

, DRAIN−TO−SOURCE VOLTAGE (V)

−V

10

1 10 100 0.5 0.70.6 1.

100

10

1

0.1

D

0.01

0.1 10 1001 25 125 15

Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.

t

d(on)

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

VGS = 20 V
SINGLE PULSE
TC = 25°C

dc

10 ms

1 ms

100 ms

R

LIMIT

DS(on)

10 ms

THERMAL LIMIT
PACKAGE LIMIT

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

, SOURCE CURRENT (AMPS)

S

−I

0

0.8 0.9

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

350

300

250

200
150

100

AVALANCHE ENERGY (mJ)

50

, SINGLE PULSE DRAIN−TO−SOURCE

AS

0

E

1007550

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

ID = −6 A

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5

NTF5P03T3

TYPICAL ELECTRICAL CHARACTERISTICS

1

D = 0.5

0.2

0.1

0.05

0.1

0.02

, EFFECTIVE TRANSIENT

THERMAL RESPONSE

THJA(t)

R

SINGLE PULSE

0.01

1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01

0.01

CHIP
JUNCTION

Figure 13. FET Thermal Response

NORMALIZED TO R

0.0175 W

0.0154 F

t, TIME (s)

0.0710 W

0.0854 F

AT STEADY STATE (1″ PAD)

q

JA

0.2706 W

0.3074 F

0.5779 W

1.7891 F

0.7086 W

107.55 F

1.0E+02 1.0E+03

AMBIENT

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6

b1

NTF5P03T3

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

D

ISSUE L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.08 (0003)

H

e1

E

A1

4

123

e

E

b

q

A

SOLDERING FOOTPRINT*

2.0

0.079

2.3

0.091

3.8

0.15

L1

C

2.3

0.091

DIMAMIN NOM MAX MIN

A1 0.02 0.06 0.10 0.001

b 0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c 0.24 0.29 0.35 0.009
D 6.30 6.50 6.70 0.249
E 3.30 3.50 3.70 0.130
e 2.20 2.30 2.40 0.087

e1
L1 1.50 1.75 2.00 0.060
H

E

q

STYLE 3:

PIN 1. GATE

MILLIMETERS

1.50 1.63 1.75 0.060

0.85 0.94 1.05 0.033

6.70 7.00 7.30 0.264
0° 10° 0° 10°

− −

2. DRAIN

3. SOURCE

4. DRAIN

6.3

0.248

INCHES

NOM MAX

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

0.069 0.078

0.276 0.287

2.0

0.079

1.5

0.059

SCALE 6:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and

soldering details, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTF5P03T3/D

7