Datasheet NTF3055L108T1G Specification

NTF3055L108

Preferred Device

Power MOSFET

3.0 A, 60 V, Logic Level, N−Channel
SOT−223

Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.

Features

• Pb−Free Packages are Available

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3.0 A, 60 V

R

DS(on)

= 120 mW

Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 10 ms)

Drain Current

− Continuous @ T

− Continuous @ T

− Single Pulse (t

Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ T

Derate above 25°C

Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

= 25 Vdc, VGS = 5.0 Vdc,

(V

DD

I

= 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)

L(pk)

Thermal Resistance

−Junction−to−Ambient (Note 1)

−Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously . If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

(Cu. Area 0.0995 in

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2−2.4 oz. (Cu. Area 0.272 in

p

= 25°C unless otherwise noted)

C

Rating Symbol Value Unit

stg

60 Vdc
60 Vdc

± 15
± 20

3.0

1.4

9.0

2.1

1.3

0.014

−55

to 175

74 mJ

72.3
114

260 °C

Vdc
Vpk

Adc

Apk

Watts
Watts

W/°C

°C

°C/W

= 25°C

A

= 100°C

A

≤ 10 ms)

= 25°C

J

2

).

= 25°C (Note 2)

A

2

).

V

V

E

R
R

DSS
DGR

GS

I
I

I

DM

P

AS

q

q

T

D
D

D

JA
JA

L

N−Channel

D

G

S

4

1

2

3

SOT−223

CASE 318E

STYLE 3

MARKING DIAGRAM

3055L = Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

AYW

3055LG

G

PIN ASSIGNMENT

4

Drain

Gate Drain Source

321

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

© Semiconductor Components Industries, LLC, 2005

December, 2005 − Rev. 4

1

Publication Order Number:

NTF3055L108/D

NTF3055L108

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 Vdc, ID = 250 mAdc)

(V

GS

(Note 3)

Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current

= 60 Vdc, VGS = 0 Vdc)

(V

DS

= 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

(V

DS

Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

= VGS, ID = 250 mAdc)

(V

DS

(Note 3)

Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)

= 5.0 Vdc, ID = 1.5 Adc)

(V

GS

Static Drain−to−Source On−Resistance (Note 3)

= 5.0 Vdc, ID = 3.0 Adc)

(V

GS

= 5.0 Vdc, ID = 1.5 Adc, TJ = 150°C)

(V

GS

Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 3.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance C

(VDS = 25 Vdc, V

f = 1.0 MHz)

GS

= 0 V,

Transfer Capacitance C

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(V

= 30 Vdc, ID = 3.0 Adc,

Rise Time t
Turn−Off Delay Time t

DD

= 5.0 Vdc,

V

GS

R

= 9.1 W) (Note 3)

G

Fall Time t
Gate Charge

(VDS = 48 Vdc, ID = 3.0 Adc,

= 5.0 Vdc) (Note 3)

V

GS

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (IS = 3.0 Adc, VGS = 0 Vdc)

= 3.0 Adc, VGS = 0 Vdc,

(I

S

= 150°C) (Note 3)

T

J

Reverse Recovery Time

(IS = 3.0 Adc, VGS = 0 Vdc,

dI

/dt = 100 A/ms) (Note 3)

S

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

4. Switching characteristics are independent of operating junction temperatures.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

60

−

−

−

68
68

−

−

−

−

1.0
10

− − ± 100 nAdc

1.0

−

1.68

4.6

2.0

−

Vdc

mV/°C

mAdc

Vdc

mV/°C

mW

− 92 120

V

DS(on)

C

t

d(on)

d(off)

V

− 0.290

0.250

g

fs

iss

oss

rss

− 5.7 − Mhos

− 313 440

− 112 160

− 40 60

0.43

−

− 11 25

r

− 35 70

− 22 45

f

Q

T

Q

1

Q

2

SD

t

rr

t

a

t

b

RR

− 27 60

− 7.6 15

− 1.4 −

− 4.0 −

−

−

0.87

0.72

1.0

− 35 −

− 21 −

− 14 −

− 0.044 −

−

Vdc

pF

ns

nC

Vdc

ns

mC

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2

NTF3055L108

I

DRAIN CURRENT (AMPS)

6

6

5

4

3

2

D,

1

0

0

0.16
VGS = 5 V

0.14

0.12

0.1

0.08

0.06

VGS = 3.4 V

VGS = 3.5 V

VGS = 4.5 V

VGS = 6 V

VGS = 3.2 V

VGS = 3 V

5

4

3

VGS = 10 V

VGS = 2.8 V

VGS = 2.5 V

0.5

V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

1.5 2.5 15241.5 2.5 3 3.5 4.5

321

2

DRAIN CURRENT (AMPS)

D,

1

I

0

0.16

TJ = 100°C

0.14

0.12

TJ = 25°C

0.1

V

> = 10 V

DS

TJ = 100°C

TJ = 25°C

TJ = −55°C

V

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

VGS = 10 V

TJ = 100°C

TJ = 25°C

0.08

TJ = −55°C

0.06

TJ = −55°C

0.04

DRAIN−TO−SOURCE RESISTANCE (W)

0.02

DS(on),

R

0

146

2

DRAIN CURRENT (AMPS)

I

D,

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

GATE−TO−SOURCE VOLTAGE (VOLTS)

V

GS,

2

ID = 1.5 A
V

1.8

1.6

1.4

1.2

1

0.8

0.6

−50 50250−25 75 125100

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on),

R

= 5 V

GS

T

, JUNCTION TEMPERATURE (°C)

J

Figure 5. On−Resistance Variation with

Temperature

0.04

DRAIN−TO−SOURCE RESISTANCE (W)

53

0.02

DS(on),

R

0

14653

2

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

1000

TJ = 150°C

100

150

, LEAKAGE (nA)

DSS

I

175

10

1

04060302010 50

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS,

TJ = 100°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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3

NTF3055L108

C, CAPACITANCE (pF)

)

t, TIME (ns)

I

, DRAIN CURRENT (AMPS)

5

1000

800

VDS = 0 V

C

iss

VGS = 0 V

TJ = 25°C

600

C

rss

400

200

0

10 10 155020525

V

V

GS

DS

C

iss

C

oss

C

rss

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

6

5

4

Q

1

Q

Q

2

3

2

1

, GATE−TO−SOURCE VOLTAGE (VOLTS

0

GS

V

057

Q

31

, TOTAL GATE CHARGE (nC)

g

(VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

1000

VDS = 30 V
I

= 3 A

D

= 5 V

V

GS

100

t

r

t

f

t

10

1

d(off)

t

d(on)

1 10 100 0.54 0.7 0.820.660.62 0.860.58

RG, GATE RESISTANCE (W)

3.2
VGS = 0 V

2.8

T

= 25°C

J

2.4

2

1.6

1.2

0.8

, SOURCE CURRENT (AMPS)

S

0.4

I

0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

T

V

GS

ID = 3 A
T

= 25°C

J

428

0.74 0.78

6

0.9

100

10

1

0.1

D

0.01

0.1 10 1001 25 125 15010075 17

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

VGS = 15 V
SINGLE PULSE
TC = 25°C

10 ms

dc

1 ms

R

DS(on)

LIMIT

100 ms

THERMAL LIMIT
PACKAGE LIMIT

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

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Figure 10. Diode Forward Voltage vs. Current

80
70
60
50
40
30
20

AVALANCHE ENERGY (mJ)

10

, SINGLE PULSE DRAIN−TO−SOURCE

AS

0

E

50

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

4

ID = 7 A

Starting Junction Temperature

10

0

r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE

1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4)

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

RESISTANCE (NORMALIZED)

0.01

0.01

Single Pulse

NTF3055L108

0.001

0.010.00010.00001
t, TIME (s)

1001010.10.001 100

Figure 13. Thermal Response

ORDERING INFORMATION

Device Package Shipping

NTF3055L108T1 SOT−223 (TO−261) 1000 / Tape & Reel
NTF3055L108T1G SOT−223 (TO−261)

(Pb−Free)
NTF3055L108T3 SOT−223 (TO−261) 4000 / Tape & Reel
NTF3055L108T3G SOT−223 (TO−261)

(Pb−Free)
NTF3055L108T3LF SOT−223 (TO−261) 4000 / Tape & Reel
NTF3055L108T3LFG SOT−223 (T O−261)

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

1000 / Tape & Reel

4000 / Tape & Reel

4000 / Tape & Reel

†

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5

0.08 (0003)

S

L

H

A
F

4

123

G

NTF3055L108

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE K

B

D

C

M

SOLDERING FOOTPRINT*

3.8

0.15

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

DIMAMIN MAX MIN MAX

0.249 0.263 6.30 6.70

B 0.130 0.145 3.30 3.70
C 0.060 0.068 1.50 1.75
D 0.024 0.035 0.60 0.89
F 0.115 0.126 2.90 3.20
G 0.087 0.094 2.20 2.40
H 0.0008 0.0040 0.020 0.100
J 0.009 0.014 0.24 0.35
K 0.060 0.078 1.50 2.00
L 0.033 0.041 0.85 1.05
M 0 10 0 10

J

K

____

S 0.264 0.287 6.70 7.30

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERS

2.0

0.079

2.3

0.091

2.3

0.091

6.3

0.248

2.0

0.079

mm

ǒ

1.5

0.059

SCALE 6:1

inches

Ǔ

SOT−223

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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NTF3055L108/D