Datasheet NTF3055L108 Datasheet (ON) [ru]

NTF3055L108

Preferred Device

Power MOSFET

3.0 Amps, 60 Volts, Logic Level

N–Channel SOT–223

Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.

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Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage

– Continuous
– Non–repetitive (t

Drain Current

– Continuous @ T
– Continuous @ T
– Single Pulse (t

Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ T

Derate above 25°C

Operating and Storage Temperature Range TJ, T

Single Pulse Drain–to–Source Avalanche

Energy – Starting T

= 25 Vdc, VGS = 5.0 Vdc,

(V

DD

I

(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)

L

Thermal Resistance

–Junction to Ambient (Note 1)
–Junction to Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

(Cu. Area 0.0995 in

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2–2.4 oz. (Cu. Area 0.272 in

p

= 25°C unless otherwise noted)

C

Rating

≤ 10 ms)

p

= 25°C

A

= 100°C

A

≤ 10 µs)

= 25°C (Note 2)

A

= 25°C

J

2

).

2

).

Symbol Value Unit

stg

60 Vdc
60 Vdc

± 15
± 20

3.0

1.4

9.0

2.1

1.3

0.014

–55 to

175

74 mJ

72.3
114

260 °C

Vdc
Vpk

Adc

Apk

Watts
Watts

W/°C

°C

°C/W

V

E

R
R

DSS
DGR

GS

I
I

I

DM

P

AS

θ
θ

T

D
D

D

JA
JA

L

3.0 AMPERES
60 VOLTS

R

DS(on)

G

4

1

2

3

3055L = Device Code
L = Location Code
WW = Work Week

PIN ASSIGNMENT

ORDERING INFORMATION

Device Package Shipping

NTF3055L108T1 SOT–223 1000/Tape & Reel
NTF3055L108T3 SOT–223 4000/Tape & Reel

= 120 m

N–Channel

D

S

SOT–223

CASE 318E

STYLE 3

4

Drain

Gate Drain Source

321

MARKING
DIAGRAM

3055L

LWW

 Semiconductor Components Industries, LLC, 2001

October, 2001 – Rev. 1

NTF3055L108T3LF SOT–223 4000/Tape & Reel

Preferred devices are recommended choices for future use
and best overall value.

1

Publication Order Number:

NTF3055L108/D

NTF3055L108

)

f

MHz)

R

G

9.1 Ω) (Note 3)
)

V

GS

Vdc) (Note 3)

(I

S

Adc, V

GS

Vdc

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Note 3)

(V

= 0 Vdc, ID = 250 µAdc)

GS

Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current

(V

= 60 Vdc, VGS = 0 Vdc)

DS

= 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

(V

DS

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(V

= VGS, ID = 250 µAdc)

DS

Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Note 3)

= 5.0 Vdc, ID = 1.5 Adc)

(V

GS

Static Drain–to–Source On–Resistance (Note 3)

(V

= 5.0 Vdc, ID = 3.0 Adc)

GS

= 5.0 Vdc, ID = 1.5 Adc, TJ = 150°C)

(V

GS

Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 3.0 Adc)

(Note 3)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

(VDS = 25 Vdc, V

f = 1.0 MHz

= 1.0

GS

= 0 V,

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn–On Delay Time t

(V

Rise Time
Turn–Off Delay Time

= 30 Vdc, ID = 3.0 Adc,

DD

VGS = 5.0 Vdc,

= 9.1 Ω) (Note 3)

R

G

Fall Time
Gate Charge

(VDS = 48 Vdc, ID = 3.0 Adc,

V

= 5.0 Vdc) (Note 3

= 5.0

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (IS = 3.0 Adc, VGS = 0 Vdc)

Reverse Recovery Time

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2.0%.

4. Switching characteristics are independent of operating junction temperatures.

(I

= 3.0 Adc, VGS = 0 Vdc,

S

= 150°C) (Note 3)

T

J

(IS = 3.0 Adc, VGS = 0 Vdc,

3.0
/dt = 100 A/µs) (Note 3)

dI

S

0

,

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

V

DS(on)

g

C
C
C

d(on)

t

d(off)

Q

Q
Q

V

t
t
t

fs

iss

oss

rss

t

r

t

f

SD

rr
a
b

RR

60

–

68
68

–
–

mV/°C

µAdc

Vdc

–
–

–
–

1.0
10

– – ± 100 nAdc

Vdc

1.0
–

1.68

4.6

2.0
–

mV/°C

mΩ

– 92 120

Vdc

– 0.290

0.250

0.43
–

– 5.7 – Mhos

– 313 440

pF
– 112 160
– 40 60

– 11 25

ns
– 35 70
– 22 45
– 27 60

T
1
2

– 7.6 15
– 1.4 –
– 4.0 –

nC

Vdc
–
–

– 35 –

0.87

0.72

1.0
–

ns
– 21 –
– 14 –
– 0.044 – µC

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2

NTF3055L108

6

5

4

3

2

DRAIN CURRENT (AMPS)

D,

1

I

0

0

0.5

V

DRAIN–TO–SOURCE VOLTAGE (VOLTS)

DS,

VGS = 4.5 V

VGS = 6 V

VGS = 10 V

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

0.16
VGS = 5 V

0.14

0.12

0.1

0.08

0.06

VGS = 3.5 V

1.5 2.5

TJ = 100°C

TJ = 25°C

TJ = –55°C

VGS = 3.4 V

VGS = 3.2 V

VGS = 3 V

VGS = 2.8 V

VGS = 2.5 V

6

V

> = 10 V

DS

5

4

3

TJ = 100°C

2

DRAIN CURRENT (AMPS)

D,

1

I

TJ = 25°C

TJ = –55°C

321

0

15241.5 2.5 3 3.5 4.5
V

GATE–TO–SOURCE VOLTAGE (VOLTS)

GS,

0.16
VGS = 10 V

0.14

0.12

TJ = 100°C

0.1
TJ = 25°C

0.08

0.06

TJ = –55°C

0.04

DRAIN–TO–SOURCE RESISTANCE (Ω)

0.02

DS(on),

R

0

146

2

I

DRAIN CURRENT (AMPS)

D,

Figure 3. On–Resistance vs. Gate–to–Source

Voltage

GATE–TO–SOURCE VOLTAGE (VOLTS)

V

GS,

2

ID = 1.5 A
V

1.8

1.6

1.4

1.2

1

0.8

0.6
–50 50250–25 75 125100

DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)

DS(on),

R

= 5 V

GS

T

, JUNCTION TEMPERATURE (°C)

J

Figure 5. On–Resistance Variation with

Temperature

0.04

DRAIN–TO–SOURCE RESISTANCE (Ω)

53

0.02

DS(on),

R

0

14653

2

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

1000

TJ = 150°C

100

150

, LEAKAGE (nA)

DSS

I

175

10

1

04060302010 50

V

DRAIN–TO–SOURCE VOLTAGE (VOLTS)

DS,

TJ = 100°C

Figure 6. Drain–to–Source Leakage Current

vs. Voltage

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3

NTF3055L108

6

1000

VDS = 0 V

VGS = 0 V

TJ = 25°C

5

C

800

iss

4

Q

1

600

C

rss

400

C, CAPACITANCE (pF)

200

0

10 10 155020525

V

V

GS

DS

C

iss

C

oss

C

rss

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE

3

2

1

, GATE–TO–SOURCE VOLTAGE (VOLTS)

0

GS

V

057

Q

Q

31

, TOTAL GATE CHARGE (nC)

g

(VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate–to–Source and

Drain–to–Source Voltage vs. Total Charge

1000

100

t, TIME (ns)

10

VDS = 30 V
I

= 3 A

D

V

= 5 V

GS

t

f

t

d(off)

t

r

t

d(on)

3.2
VGS = 0 V

2.8

T

= 25°C

J

2.4

2

1.6

1.2

0.8

, SOURCE CURRENT (AMPS)

S

0.4

I

Q

T

V

GS

2

ID = 3 A
T

= 25°C

J

428

6

1

1 10 100 0.54 0.7 0.820.660.62 0.860.58

RG, GATE RESISTANCE (Ω)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

100

VGS = 15 V
SINGLE PULSE

= 25°C

T

C

10

10 ms

1

0.1

, DRAIN CURRENT (AMPS)

D

I

0.01

THERMAL LIMIT
PACKAGE LIMIT

0.1 10 1001 25 125 15010075 17550

R

DS(on)

dc

LIMIT

1 ms

100 µs

, SINGLE PULSE DRAIN–TO–SOURCE

AS

E

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0

0.74 0.78

VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

80
70
60
50
40
30
20

AVALANCHE ENERGY (mJ)

10

0

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

0.9

ID = 7 A

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4

10

1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4)

1

0.1

RESISTANCE (NORMALIZED)

0.01

r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE

0.001

Figure 13. Thermal Response

NTF3055L108

0.010.00010.00001
t, TIME (s)

1001010.10.001 1000

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5

0.08 (0003)

S

L

H

A

F

4

123

G

NTF3055L108

PACKAGE DIMENSIONS

SOT–223 (TO–261)

CASE 318E–04

ISSUE K

B

D

C

M

K

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

DIMAMIN MAX MIN MAX

0.249 0.263 6.30 6.70

B 0.130 0.145 3.30 3.70
C 0.060 0.068 1.50 1.75
D 0.024 0.035 0.60 0.89
F 0.115 0.126 2.90 3.20

G 0.087 0.094 2.20 2.40

H 0.0008 0.0040 0.020 0.100

J

J 0.009 0.014 0.24 0.35
K 0.060 0.078 1.50 2.00
L 0.033 0.041 0.85 1.05

M 0 10 0 10



S 0.264 0.287 6.70 7.30

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERS

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6

Notes

NTF3055L108

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7

NTF3055L108

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8